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    US ARMY TRANSISTOR Search Results

    US ARMY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    US ARMY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRIG modulator

    Abstract: ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER
    Text: A TRANSMITTER CHIP SET FOR WIRELESS TELEMETRY APPLICATIONS Karina Osgood Lawrence W. Burke Jr. Andy Moysenko Amy Webb M/A-COM, Inc. Dennis Schneider Ronald Colangelo U.S. Army Simulation, Training & Instrumentation Command STRICOM Kenneth McMullen Robert Wert


    Original     		PDF ARL-TR-1206, IRIG modulator ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER

    JR 200 RF TRANSMITTER

    Abstract: IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band
    Text: A TRANSMITTER CHIP SET FOR WIRELESS TELEMETRY APPLICATIONS 2001 International Telemetry Conference Karina Osgood Lawrence W. Burke Jr. Andy Moysenko Amy Webb M/A-COM, Inc. Dennis Schneider Ronald Colangelo U.S. Army Simulation, Training & Instrumentation Command (STRICOM)


    Original     		PDF ARL-TR-1206, JR 200 RF TRANSMITTER IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    2N501A

    Abstract: ATI 1026 340nm RNW transistor
    Text: &ffL-S-19500/62B 26 July 1968 WJPERSEDfNG MIL-%19500/63A 15 June 1961 M3f,fTARY SEMICONDUCTOR DEVICE, SPEIXFICATION TRANSISTOR, TYPE PNP, GERMANTUM, LOW-POWER 2N501A This specification i8 mandatory for use by all Departments gencfa of he Department of Defense.


    Original     		PDF ffL-S-19500/62B 19500/63A 2N501A 2N501A ATI 1026 340nm RNW transistor

    2N7368

    Abstract: 2N3716 cc 3053
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 25 January 2009. INCH-POUND MIL-PRF-19500/622C 25 October 2008 SUPERSEDING MIL-PRF-19500/622B 7 November 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER


    Original     		PDF MIL-PRF-19500/622C MIL-PRF-19500/622B 2N7368 MIL-PRF-19500. 2N3716 cc 3053

    TRANSISTOR 2n65s

    Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
    Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification


    Original     		PDF MIL-s-19500/74E MIL-S-19500/74D 2N497, 2N498, 2N656, 2N657 2N656 TRANSISTOR 2n65s 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22

    710a

    Abstract: 2N6674
    Text: INCH-POUND MIL-PRF-19500/710A 25 August 2008 SUPERSEDING MIL-PRF-19500/710 7 May 2003 The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2008. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/710A MIL-PRF-19500/710 2N6674T1, 2N6674T3, 2N6675T1, 2N6675T3, MIL-PRF-19500. 710a 2N6674

    2N7372 datasheet

    Abstract: 2N5005 2N7372
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 28 January 2009. INCH-POUND MIL-PRF-19500/612D 28 October 2008 SUPERSEDING MIL-PRF-19500/612C 16 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/612D MIL-PRF-19500/612C 2N7372, MIL-PRF-19500. 2N7372 datasheet 2N5005 2N7372

    diode cc 3053

    Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 January 2009. MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN

    2n3792 equivalent

    Abstract: 2N3791 equivalent 2N3792 2N3791 2N7369 379h 2N3792 JANTX
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 May 2008. MIL-PRF-19500/379H 1 February 2008 SUPERSEDING MIL-PRF-19500/379G 10 June 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/379H MIL-PRF-19500/379G 2N3791 2N3792, MIL-PRF-19500. 2n3792 equivalent 2N3791 equivalent 2N3792 2N7369 379h 2N3792 JANTX

    clare mercury relay hgp 1004

    Abstract: clare mercury relay 2N3584 2N3585 marking 384E
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2008. MIL-PRF-19500/384F 25 March 2008 SUPERSEDING MIL-PRF-19500/384E 27 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER,


    Original     		PDF MIL-PRF-19500/384F MIL-PRF-19500/384E 2N3584, 2N3585, MIL-PRF-19500. clare mercury relay hgp 1004 clare mercury relay 2N3584 2N3585 marking 384E

    2N6350 equivalent

    Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. MIL-PRF-19500/472E 9 October 2007 SUPERSEDING MIL-PRF-19500/472D 9 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/472E MIL-PRF-19500/472D 2N6350, 2N6351, 2N6352, 2N6353, MIL-PRF-19500. 2N6350 equivalent 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351

    2N3716

    Abstract: 2N7368 2N3715 C-2688 2N3716 JAN 2N3715 JANTX equivalent jan,tx series semiconductors
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 5 September 2008. INCH-POUND MIL-PRF-19500/408J 5 June 2008 SUPERSEDING MIL-PRF-19500/408H 4 May 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/408J MIL-PRF-19500/408H 2N3715 2N3716, MIL-PRF-19500. 2N3716 2N7368 C-2688 2N3716 JAN 2N3715 JANTX equivalent jan,tx series semiconductors

    transistor a719

    Abstract: A719 4392 ic equivalent 2N3904
    Text: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/529 2N3904 MIL-S-19500/ MIL-S-19500. MIL-S-19500 5961-A719) transistor a719 A719 4392 ic equivalent 2N3904

    A720 transistor

    Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
    Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.


    OCR Scan     		PDF 2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW

    2N1652

    Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
    Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­


    OCR Scan     		PDF MIL-S-19500/219A mil-S-19500/219 2N1651, 2N1652, 2N1653 Ic-25A 2N1652 2N1653 MIL-STD-780 2N1651 Germanium power

    MC 3041

    Abstract: MC 140 transistor MC 139 transistor 2N2378 2N496 2N2378 JAN "MC 140" transistor transistor mc 140
    Text: MIL-S-19500/289 EL 24 April 1964 M ILIT A RY S P E C IFIC A T IO N TRAN SISTO R, P N P, S IL IC O N TYPE 2N2378 1. SC O PE 1. 1 Scope. - Thir specification covers the detail requirements for silicon, P N P, transistors for use, particularly, in switching, amplifier circuitry.


    OCR Scan     		PDF L-S-19500/289 2N2378 MC 3041 MC 140 transistor MC 139 transistor 2N2378 2N496 2N2378 JAN "MC 140" transistor transistor mc 140

    2N297A JAN

    Abstract: germanium transistor pnp 2n297a 2N297A transistor marking 3-020 3036
    Text: M IL -S-19500/36C {j March 1967 SUPEH5EDÏNU M IL -S -19500,/36B 15 A pril 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, HIGH-POWER TVTiP QVT4n | 1 1• i r e «iì«9 — iB 1irn. T h is sp ecifica tio n Is mandatory for u se by a ll D epart­


    OCR Scan     		PDF MIL-S-19500/36C MIL-S-19500/36B 2N297A PR08LEMS 2N297A JAN germanium transistor pnp 2n297a 2N297A transistor marking 3-020 3036

    OC 140 germanium transistor

    Abstract: OC 74 germanium transistor 2N466 715C 5051A
    Text: MIL-S-19500/5 ».E * K r.roh 1 <?' SUPERSEDING »»TT o 1A cnn/dn 1V1X U “ Ü " l i 7 J U U / 0 - 1 1 / 5 March 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. PNP GERMANIUM, LOW-POWER TYPE 2N466 m ia fin n fîn n la to i^cttiun iipia Vu-iy* * ann11 ucpax


    OCR Scan     		PDF MIL-S-19500/5 MIL-S-195Ã 0/51D 2N466 OC 140 germanium transistor OC 74 germanium transistor 2N466 715C 5051A

    SVI 3206

    Abstract: SVI 3206 D svi 3201 svi 3001 2N910 JANTX 2N910S 2N911 2N912 2N910 2N911S
    Text: I— - 1 I- 1 | Thedocueentetion I and .process |conversion»çasores<nac*#sary to | | comply *ith.this revision.shall be | completed by 5 May 1995 | INCH-POUND | 1- - — ' j MIL-S-19500/274CCER I -


    OCR Scan     		PDF MIL-S-19500/274CCER) MIL-S-19500/274B 2N910, 2N910S, 2N911, 2N911S, 2N912, 2N912S, SVI 3206 SVI 3206 D svi 3201 svi 3001 2N910 JANTX 2N910S 2N911 2N912 2N910 2N911S

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan     		PDF /331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553

    t056

    Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
    Text: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,


    OCR Scan     		PDF 0D01B40 MIL-S-19500/248A 2N2015, 2N2016 0D001S5 2N20t 0D13S2 t056 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR

    2N6137

    Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
    Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV


    OCR Scan     		PDF MIL-S-19500/493A MIL-S-19500/493 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, MIL-S-19500. T0-18) 2N6137 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX