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    US ARMY TRANSISTOR CROSS Search Results

    US ARMY TRANSISTOR CROSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    US ARMY TRANSISTOR CROSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    710a

    Abstract: 2N6674
    Text: INCH-POUND MIL-PRF-19500/710A 25 August 2008 SUPERSEDING MIL-PRF-19500/710 7 May 2003 The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2008. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/710A MIL-PRF-19500/710 2N6674T1, 2N6674T3, 2N6675T1, 2N6675T3, MIL-PRF-19500. 710a 2N6674

    2N7501

    Abstract: 2N7502U5 2n7500 2N750 2N7500U5 IRHE57133SE LCC-18 2n7502
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2007. * INCH-POUND MIL-PRF-19500/707A 6 September 2007 SUPERSEDING MIL-PRF-19500/707 6 February 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/707A MIL-PRF-19500/707 2N7500U5, 2N7501U5, 2N7502U5, MIL-PRF-19500. 2N7501 2N7502U5 2n7500 2N750 2N7500U5 IRHE57133SE LCC-18 2n7502

    2n7505

    Abstract: IRF5Y9540CM
    Text: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/748 2N7505T3, MIL-PRF-19500. O-257AA 2N7505T3 IRF5Y9540CM 2n7505 IRF5Y9540CM

    2n7507

    Abstract: IRF5NJ3315 BL 15 SMD
    Text: INCH-POUND MIL-PRF-19500/750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/750 2N7507U3, MIL-PRF-19500. O-276AA 2N7507U3 IRF5NJ3315 2n7507 IRF5NJ3315 BL 15 SMD

    54S287

    Abstract: HARRIS SEMICONDUCTORS QML MARKING 7611 harris 93417 prom 7611 prom SL82S129
    Text: INCH-POUND MIL-M-38510/203E 18 September 2007 SUPERSEDING MIL-M-38510/203D 19 January 2006 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995


    Original     		PDF MIL-M-38510/203E MIL-M-38510/203D CDKB/18324 CFJ/07263 CCXP/27014 CDWO/34371 CECD/50364 54S287 HARRIS SEMICONDUCTORS QML MARKING 7611 harris 93417 prom 7611 prom SL82S129

    signetics PROM

    Abstract: monolithic memories 5330
    Text: INCH-POUND MIL-M-38510/207E 5 October 2007 SUPERSEDING MIL-M-38510/207D 16 February 2007 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995


    Original     		PDF MIL-M-38510/207E MIL-M-38510/207D 256-BIT, signetics PROM monolithic memories 5330

    2N7426

    Abstract: 2n7425 2n7424 MOSFET cross-reference IRHM9064 IRHM9160
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. MIL-PRF-19500/660C 8 February 2008 SUPERSEDING MIL-PRF-19500/660B 4 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/660C MIL-PRF-19500/660B 2N7424, 2N7425, 2N7426, MIL-PRF-19500. 2N7426 2n7425 2n7424 MOSFET cross-reference IRHM9064 IRHM9160

    erni relay

    Abstract: relay ERNI automatic room light control with visitor counter fashion garment bosch relay equivalent THE BEATLES SONG BOSCH ME 7.4.7 ERNI RELAY TYPE 20 apple 30 pin dock male connector Bosch oxygen sensor
    Text: 56 57 58 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 83 84 85 86 87 88 92 93 94 95 96 97 98 99 00 01 02 03 04 05 06 Fifty years of 82 ERNI Germany 59 89 60 90 61 91 A success story Dear Friends, Customers, Business Partners and Employees, Today, a 50-year company anniversary is not something to be


    Original     		PDF 50-year erni relay relay ERNI automatic room light control with visitor counter fashion garment bosch relay equivalent THE BEATLES SONG BOSCH ME 7.4.7 ERNI RELAY TYPE 20 apple 30 pin dock male connector Bosch oxygen sensor

    klystron lamps

    Abstract: MIL-R-19523 MIL-R-5757 Mil-T-23648 MIL-S-8834 mil-s-8805 1000w inverter design and calculation MIL-R-39007 MIL-L-6363 MIL-STD-756
    Text: MIL-HDBK-217F BEF?1991 SUPERSEDING MIL-HDBK-217E, 2 J8nwry 1990 MILITARY NotIce 1 HANDBOOK . RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT AMSC N/A DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited. MIL-HDBK-217F DEPARTMENT OF DEFENSE


    Original     		PDF MIL-HDBK-217F MIL-HDBK-217E, t331ALTY klystron lamps MIL-R-19523 MIL-R-5757 Mil-T-23648 MIL-S-8834 mil-s-8805 1000w inverter design and calculation MIL-R-39007 MIL-L-6363 MIL-STD-756

    sensor hall 95A

    Abstract: 95A sensor hall 95A hall effect sensor D41A3100L hall current sensor 95A 5.1 home theatre assembling Celduc Relais 95A magnetic sensor HALL 95A HALL EFFECT SENSOR 95A
    Text: www.celduc.com Selection Guide ED G E T H AT CO M P E TIVE TI PRO SOLID STATE RELAYS OU U D TO S E RV E Y MAGNETIC SENSORS . REED RELAYS AND SWITCHES elais Word of Introduction Dear Customers, dear Readers, T IV E ED Keep our customers satisfied !! This “selection guide” catalogue is a picture of the products that are available


    Original     		PDF GUIDCR02 sensor hall 95A 95A sensor hall 95A hall effect sensor D41A3100L hall current sensor 95A 5.1 home theatre assembling Celduc Relais 95A magnetic sensor HALL 95A HALL EFFECT SENSOR 95A

    Germanium itt

    Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
    Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470


    Original     		PDF P-100 N-1500 N-2200 Germanium itt thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6

    IRF CANAL P

    Abstract: melcher LM 1000 mk II melcher LM 3000 MANUEL Melcher Melcher bm 3000 melcher bM 1000 mk II fonda 4 calcul de circuit snubber melcher bM 1000 cours electrotechnique
    Text: Classes de produits Melcher définies suivant l'environnement Classe de produits pour environnement sévère Rugged Environment Performance Parfaitement adaptée lorsque l’équipement est soumis à des contraintes sévères en effets électromagnetiques,


    Original     		PDF I-20159 IRF CANAL P melcher LM 1000 mk II melcher LM 3000 MANUEL Melcher Melcher bm 3000 melcher bM 1000 mk II fonda 4 calcul de circuit snubber melcher bM 1000 cours electrotechnique

    melcher LM 3000 MANUEL

    Abstract: melcher LM 1000 mk II Tableau caracteristique des transistors hacheur melcher LM 2000 MANUEL smr 40000 c melcher S-1000 melcher psr 57 melcher bM 1000 mk II diode de protection contre les surtension
    Text: Classes de produits Melcher définies suivant l'environnement Classe de produits pour environnement sévère Rugged Environment Performance Parfaitement adaptée lorsque l’équipement est soumis à des contraintes sévères en effets électromagnetiques,


    Original     		PDF I-20159 melcher LM 3000 MANUEL melcher LM 1000 mk II Tableau caracteristique des transistors hacheur melcher LM 2000 MANUEL smr 40000 c melcher S-1000 melcher psr 57 melcher bM 1000 mk II diode de protection contre les surtension

    melcher LM 1000 mk II

    Abstract: melcher bM 1000 mk II MELCHER LM 2000 chopper power supply melcher lsr 3005 melcher LM 1000 melcher aM 1000 mk II melcher bM 1000 melcher SMR 51.5-7 smr 53-7 Melcher Mestro 300
    Text: Melcher Produktklassen definiert nach Umgebungsbedingungen Produktklasse für extreme Umgebungen Rugged Environment Ideal für mobile Anwendungen, bei denen hohe EMV, Stoss-, Schock- und Vibrationsfestigkeit gefordert werden oder wo extreme Temperaturen herrschen. Diese Produkte


    Original     		PDF I-20159 melcher LM 1000 mk II melcher bM 1000 mk II MELCHER LM 2000 chopper power supply melcher lsr 3005 melcher LM 1000 melcher aM 1000 mk II melcher bM 1000 melcher SMR 51.5-7 smr 53-7 Melcher Mestro 300

    transistor a719

    Abstract: A719 4392 ic equivalent 2N3904
    Text: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/529 2N3904 MIL-S-19500/ MIL-S-19500. MIL-S-19500 5961-A719) transistor a719 A719 4392 ic equivalent 2N3904

    A720 transistor

    Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
    Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.


    OCR Scan     		PDF 2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW

    IC 555 timer monostable

    Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
    Text: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.


    OCR Scan     		PDF ML-H-3S510/109A KIL-M-38510/109 MIL-M-38510. MIL-M-36510 IC 555 timer monostable timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable

    transistor 2N 2222 h 331

    Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
    Text: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi


    OCR Scan     		PDF MIL-S-19500/447A MIL-S-19500/447 2N5926, MIL-S-19500. 5961-A006) transistor 2N 2222 h 331 transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4

    LW385

    Abstract: 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510
    Text: MIL-*M-38510/210D Win-MIL-*M-38510/210C 31 January 1984 MILITARY SPECIFICATION nnM«Ii.C„R.0CI R C U I T S * DISIT*L, 16.384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON This specification Is approved for use by all Depart­


    OCR Scan     		PDF M-38510/210D M-38510/210C piat1nun-s111 CDWD/34371 CECO/50364 CDKB/18324 CCXP/27014 CECC/34649 CRP/07933 CG0/01295 LW385 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510

    ygc 801

    Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
    Text: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/569 2N6966, 2N6967, 2N6968, 2N6969 MIL-S-19500. T0-213AA. ygc 801 chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6968 yx 801 ic DIODE dla 9-F

    irf48n

    Abstract: 79M15 mfd navy MIL-M-38510/115 79m05 IRF 24N 2N6296 TX2N4033
    Text: MIL-M-38510/115 27 A pril 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for fixed output, monolithic


    OCR Scan     		PDF MIL-M-38510/115 MIL-M-38510. vol30 irf48n 79M15 mfd navy 79m05 IRF 24N 2N6296 TX2N4033

    pure sine wave dimmer

    Abstract: philips ingenuity ct transistor smd DAG heart beat sensor using led and ldr north american philips controls stepper motor CPLD Complex Programmable Logic Devices vhdl code for msk modulation fm transistor radio mini project ccga motorola biphase mark vhdl
    Text: Analog Devices’ Glossary of Analog Terminology □ ANALOG DEVICES Analog Devices’ Glossary of Analog Terminology ANALOG DEVICES □ Words are included in this book on the basis of their usage. Words that are known to have current trademarks include appropriate


    OCR Scan     		PDF 10BASE-5 10BASE-T 16-bit 32-bit 48-bit pure sine wave dimmer philips ingenuity ct transistor smd DAG heart beat sensor using led and ldr north american philips controls stepper motor CPLD Complex Programmable Logic Devices vhdl code for msk modulation fm transistor radio mini project ccga motorola biphase mark vhdl

    es relay RAS 1210

    Abstract: relay ras 1210 ITE 8510 PEC 5099 janm ME 1117 voltage regulator SH-A1 TL 8H3 IC marking pp jw DTH schematic diagram
    Text: | INCH-ROUND! MI L - M - 3 8 5 1 0 / 1 2 6B 30 December 1988 njPTRsnmrc M I L - M - 3 8 5 1 0 / 126A 9 May 1988 MILITARY S P E C I FICATION M I C R O C I R C U I T S , LINEAR, REGULATING, PULSE-WIDTH MO DULATOR, M O NOLITHIC S ILICON This s p e c i f i c a t i o n 1s approved for use by all D e p a r t ­


    OCR Scan     		PDF MIL-M-38510/126B MIL-M-38510/126A MIL-M-38SI0. MIL-M-38510. es relay RAS 1210 relay ras 1210 ITE 8510 PEC 5099 janm ME 1117 voltage regulator SH-A1 TL 8H3 IC marking pp jw DTH schematic diagram

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503