US1A
Abstract: US1A US1M
Text: US1A US1M US1A US1B US1D US1G US1J US1K US1M 20 40 60 80 100 120 140 160
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2013-10-14 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5
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Original
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PDF
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DO-214AC
UL94V-0
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-08-17 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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Original
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PDF
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UL94V-0
DO-214AC
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-10-09 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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Original
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PDF
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UL94V-0
DO-214AC
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-06-05 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5
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Original
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PDF
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UL94V-0
DO-214AC
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US1M spice
Abstract: US1x
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability
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Original
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PDF
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J-STD-020C
MIL-STD-202,
DS16008
US1M spice
US1x
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US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
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Original
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PDF
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MIL-STD-202,
DS16008
US1M spice
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2010-03-30 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.6 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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Original
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PDF
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DO-214AC
UL94V-0
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US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
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Original
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PDF
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MIL-STD-202,
DS16008
US1M spice
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5 ± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung
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Original
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PDF
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DO-214AC
UL94V-0
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Untitled
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2011-02-28 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.5 Repetitive peak reverse voltage
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Original
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PDF
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DO-214AC
UL94V-0
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US1M spice
Abstract: No abstract text available
Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current
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Original
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PDF
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MIL-STD-202,
DS16008
US1M spice
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us1j diode
Abstract: No abstract text available
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2 2.1 ± 0.2 ± 0.1 5± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung
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Original
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PDF
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DO-214AC
UL94V-0
us1j diode
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us1jm
Abstract: US1G
Text: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2010-08-12 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.6 Repetitive peak reverse voltage
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Original
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PDF
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DO-214AC
UL94V-0
us1jm
US1G
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US1J
Abstract: US1A
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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Original
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PDF
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J-STD-020C
DS16008
US1J
US1A
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US1M MARKING CODE
Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
Text: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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Original
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PDF
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J-STD-020C
DS16008
US1M MARKING CODE
US1M spice
marking c y
US1D
US1J
US1A-13
marking us1m
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
18-Jul-08
GENERAL SEMICONDUCTOR MARKING UJ SMA
vishay MARKING UM SMA
US1M MARKING CODE
us1m vishay
JESD22-B102
J-STD-002
us1g vishay
RECTIFIER marking UG 08
marking us1j Vishay
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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Original
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PDF
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SMD HF8
Abstract: No abstract text available
Text: US1A thru US1M Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratories * * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching
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Original
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PDF
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DO-214AC,
SMD HF8
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US1A
Abstract: No abstract text available
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
US1A
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Untitled
Abstract: No abstract text available
Text: US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief
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Original
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PDF
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J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
D1405051
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
03-Jul-06
GENERAL SEMICONDUCTOR MARKING UJ SMA
US1J-E3/5AT
us1m datasheet
us1m vishay
GENERAL SEMICONDUCTOR MARKING UM
US1J-E3/61T
JESD22-B102D
J-STD-002B
us1g vishay
RECTIFIER marking UG 08
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GENERAL SEMICONDUCTOR MARKING uj sma
Abstract: JESD22-B102D J-STD-002B
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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Original
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PDF
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
08-Apr-05
GENERAL SEMICONDUCTOR MARKING uj sma
JESD22-B102D
J-STD-002B
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