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    UT234 Search Results

    UT234 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT234 Microsemi Standard Recovery, 1 Amp to 2 Amp Rectifiers Scan PDF
    UT234 Microsemi Rectifier Scan PDF
    UT234 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    UT234 Unitrode International Semiconductor Data Book 1981 Scan PDF
    UT2-340RF Riedon Resistor Wirewound 340 OHM 1% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-340RFTR Riedon Resistor Wirewound 340 OHM 1% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-340RJ Riedon Resistor Wirewound 340 OHM 5% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-340RJTR Riedon Resistor Wirewound 340 OHM 5% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-348RF Riedon Resistor Wirewound 348 OHM 1% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-348RFTR Riedon Resistor Wirewound 348 OHM 1% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-348RJ Riedon Resistor Wirewound 348 OHM 5% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-348RJTR Riedon Resistor Wirewound 348 OHM 5% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-34R8F Riedon Resistor Wirewound 34 OHM 1% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-34R8FTR Riedon Resistor Wirewound 34.8 OHM 1% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-34R8J Riedon Resistor Wirewound 34 OHM 5% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-34R8JTR Riedon Resistor Wirewound 34 OHM 5% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF

    UT234 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications


    Original     		UT2340 UT2340 UT2340G-AE3-R OT-23 QW-R502-162 PDF

    diode sy 162

    Abstract: tr/diode sy 162
    Text: UNISONICTECHNOLOGIESCO., LTD UT2340 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.


    Original     		UT2340 UT2340 UT2340L-AE3-R UT2340G-AE3-R OT-23 QW-R502-162 diode sy 162 tr/diode sy 162 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications


    Original     		UT2340 UT2340 UT2340L-AE3-R UT2340G-AE3-R OT-23 QW-R502-16t QW-R502-162 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UT234-UT347, UT249-UT363 UT251-UT364, UT261-UT268 RECTIFIERS 1 Amp to 2 Amp MAXIMUM RATINGS Peak Inverse Voltage 1 Amp Series 100V 200V 400V 500V 600V 800V 1000V 1.25 Amp Series 1.5 Amp Series 2 Amp Series UT236 UT234 UT235 UT237 UT238


    Original     		UT234-UT347, UT249-UT363 UT251-UT364, UT261-UT268 UT236 UT234 UT235 UT237 UT238 UT361 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount


    Original     		UT2340 UT2340 UT2340L UT2340-AE3-R UT2340L-AE3-R OT-23 QW-R502t QW-R502-162 PDF

    UT347

    Abstract: Microsemi micronote series 050 UT362 UT242
    Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.


    Original     		UT236 UT347, UT249 UT363, UT251 UT364 UT261 UT268 T4-LDS-0289, UT347 Microsemi micronote series 050 UT362 UT242 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    HR604064

    Abstract: TG05-1505NV6 PM8403 UT23755 Hanrun AN377 UT23022 PMT119 J1 cable 40 pinouts AN-377
    Text: Transformer Selection Guide for IDT T1/E1/J1 LIU and Transceiver Application Note AN-377 TABLE OF CONTENTS INTRODUCTION . 2


    Original     		AN-377 HR604064 TG05-1505NV6 PM8403 UT23755 Hanrun AN377 UT23022 PMT119 J1 cable 40 pinouts AN-377 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    UT347

    Abstract: Microsemi micronote series 050
    Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.


    Original     		UT236 UT347, UT249 UT363, UT251 UT364 UT261 UT368 T4-LDS-0289, UT347 Microsemi micronote series 050 PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    1n4001 melf

    Abstract: No abstract text available
    Text: Standard Recovery Rectifiers Part Number ' JANTXV1N649-1 USS15 USS10 USS7.5 1N4001 1N4001GP DL4001 GS1A RL101 S1A UR105 1N4002 1N4002GP DL4002 GS1B RL102 S1B UR110 UT236 UR115 1N3611 1N4003 1N4003GP 1N4245 1N5614 1N5614US DL4003 GS1D JAN1N3611 JAN1N4245 JAN1N5614


    OCR Scan     		JANTXV1N649-1 USS15 USS10 1N4001 1N4001GP DL4001 RL101 UR105 1N4002 1N4002GP 1n4001 melf PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    B10K

    Abstract: 6 AMP 1000V DIODE lead UT347 power Diode 800V 20A TO2A PIV RATING 14 V DIODE UT362 UT234 UT242 UT249
    Text: P F P T IF IF R Q !? J ¡T , * x OA Standard Recovery, 1 Am p to 2 Am p UT236-UT347 UT249-UT363 UT2 5 1 -UT364 UT261-UT268 FEATURES DESCRIPTION • C on tinu ou s Rating: to 2 A • Controlled A valanche These m iniature power rectifiers offer the user extreme reliability for high-rel


    OCR Scan     		UT236-UT347 UT249UT363 ut251-ut364 UT261-UT268 UT236 UT249 UT251 UT261 UT234 UT242 B10K 6 AMP 1000V DIODE lead UT347 power Diode 800V 20A TO2A PIV RATING 14 V DIODE UT362 PDF

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


    OCR Scan     		DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier PDF

    UT347

    Abstract: UT234 UT236 UT242 UT249 UT251 UT252 UT261 UT262 UT363
    Text: R FP TIFIFR Q ? J I f i r •. A r\ UT236UT347 UT249-UT363 UT251-UT364 UT261-UT268 a Standard Recovery, 1 Amp to 2 Amp FEATURES DESCRIPTION • • • • • These m iniature power rectifiers offer the user extreme reliab ility for high-rel m ilitary supplies.


    OCR Scan     		UT236UT347 UT249 UT363 ut251-ut364 UT261-UT268 UT236 UT251 UT261 UT234 UT347 UT242 UT252 UT261 UT262 UT363 PDF