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    V/TM 2620 Search Results

    V/TM 2620 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10137926-2012LF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Vertical SMT Tails and Hold Down Header, Tin plating, Black Color, 20 Positions, Non GW Compatible LCP, Tape and Reel with cap. Visit Amphenol Communications Solutions
    61083-062620LF Amphenol Communications Solutions BergStak® 0.80mm Pitch, Mezzanine Connector, Vertical Header, Double Row, 60 Positions. Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions
    10122526-2030LF Amphenol Communications Solutions Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 4x Mini-SAS HD Short Housing to Mini-SAS 36pin Straight type passive internal cable assembly, 6Gbps, Controller to Backplane, 30AWG, 0.3meter. Visit Amphenol Communications Solutions
    7334L2620F02LF Amphenol Communications Solutions Smart Card Reader, Input Output Connectors, Connectors for Friendly Environment, 8 contacts, Raised, Underneath clearance 5.5 mm, Low cycle, Lead Free. Visit Amphenol Communications Solutions

    V/TM 2620 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V


    Original     		FDP51N25 FDPF51N25 FDPF51N25 PDF

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    51a marking

    Abstract: FDPF51N25
    Text: UniFET FDPF51N25 TM 28A, 250V N-Channel MOSFET Features Description • RDS on = 0.060 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


    Original     		FDPF51N25 O-220F FDPF51N25 51a marking PDF

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    51a marking

    Abstract: FDP51N25
    Text: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


    Original     		FDP51N25 O-220 FDP51N25 51a marking PDF

    79a diode

    Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		FDA79N15 79a diode 150V n-channel MOSFET D 3410 A FDA79N15 PDF

    FDA79N15

    Abstract: No abstract text available
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		FDA79N15 FDA79N15 PDF

    DG09

    Abstract: AWU6601 AWU6605 AWU6605RM45P9 AWU6605RM45Q7
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.3 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm AWU6605 • Simpler Calibration with only 2 Bias modes


    Original     		AWU6605 DG09 AWU6601 AWU6605 AWU6605RM45P9 AWU6605RM45Q7 PDF

    8365M

    Abstract: No abstract text available
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6605 40 % @ POUT = +28.5 dBm 21 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		AWU6605 8365M PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6602 TM HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6602 PDF

    AWU6608

    Abstract: 6608R DG09 AWU6601 AWU6608RM45P9 AWU6608RM45Q7
    Text: AWU6608 HELP3 Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6608 40 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6608 AWU6608 6608R DG09 AWU6601 AWU6608RM45P9 AWU6608RM45Q7 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6602 AWU6602 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6608 HELP3 Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6608 40 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6608 AWU6608 PDF

    dG09

    Abstract: No abstract text available
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6602 dG09 PDF

    DG09

    Abstract: AWU6601 AWU6605 HSPA Module AWU6605RM45P9 AWU6605RM45Q7
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm AWU6605 • Simpler Calibration with only 2 Bias modes


    Original     		AWU6605 DG09 AWU6601 AWU6605 HSPA Module AWU6605RM45P9 AWU6605RM45Q7 PDF

    6602R

    Abstract: DG09 MPR 55 AWU6601 AWU6602 AWU6602RM45P9 AWU6602RM45Q7
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6602 6602R DG09 MPR 55 AWU6601 AWU6602 AWU6602RM45P9 AWU6602RM45Q7 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6605 40 % @ POUT = +28.5 dBm 21 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		AWU6605 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6605 TM HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform AWU6605 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		AWU6605 PDF

    DG09

    Abstract: AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7
    Text: AWU6604 HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 39 % @ POUT = +28.25 dBm 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6604 AWS/UMTS1700-Band DG09 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7 PDF

    aws duplexer

    Abstract: DG09 HBT 01 05 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7
    Text: AWU6604 HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.3 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 39 % @ POUT = +28.25 dBm 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6604 AWS/UMTS1700-Band aws duplexer DG09 HBT 01 05 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6601 TM HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWU6601 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6604 TM HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform • 39 % @ POUT = +28.25 dBm • 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		AWU6604 PDF

    AT2110

    Abstract: No abstract text available
    Text: AWU6601 HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • AWU6601 Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWU6601 AT2110 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWU6601C HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • AWU6601 Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWU6601C PDF