Ultra High Voltage Hexfets
Abstract: dioda rectifier EMBI IRF1010 IRF840LC dioda 12B dioda OA 50 TF 100 FEMA
Text: PD-9.1069 International S Rectifier IRF840LC HEXFET* Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss> Coss. Crss Extremely High Frequency Operation Repetitive Avalanche Rated Vdss= 500V
|
OCR Scan
|
IRF840LC
71321S.
B172-OTM1
963C6
Ultra High Voltage Hexfets
dioda rectifier
EMBI
IRF1010
IRF840LC
dioda 12B
dioda OA 50
TF 100 FEMA
|
PDF
|
IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
|
OCR Scan
|
VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
|
PDF
|
M9409
Abstract: transistor 342 G motorola 2N5643
Text: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in
|
OCR Scan
|
2N5643
M9409
transistor 342 G
motorola 2N5643
|
PDF
|
MOC70
Abstract: k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s T ransisto r Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili con N PN phototransistor in a m olded plastic housing. A slot in the housing between the
|
OCR Scan
|
354G-01
MOC70
k 1094 transistor
MOC70H1
motorola transistor 307
transistor 701 2k
transistor 1094
|
PDF
|
ic moc3041
Abstract: moc3041 moc3041 application note MOC3043 MOC3Q42
Text: MOTOROLA m SEM ICONDUCTOR TECHNICAL DATA MOC3041 MOC3042 MOC3043 6-Pin DIP Optoisolators T r ia c D r iv e r O u tp u t These devices consist o f gallium arsenide infrared em itting diodes optically coupled to a m onolithic silicon detector perform ing the function of a Zero Voltage Crossing bilateral
|
OCR Scan
|
AN006
CATH00E
V14SM,
30A-02
ic moc3041
moc3041
moc3041 application note
MOC3043
MOC3Q42
|
PDF
|