Untitled
Abstract: No abstract text available
Text: O K I Semiconductor_ MSM51 V17805 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V17805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V17805A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The V17805A is
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MSM51V17805A
152-Word
MSM51V17805A
28-pin
cycles/32
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17805A features a “hyper page” mode of operation whereby
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MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
C28058S-2C
MB81V17805A-60/-60L/-70/-70L
28-LEAD
FPT-28P-M14)
F28040S-1C
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PDF
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A6070M
Abstract: 780sa 7805A PI 81V17805 81v17805a
Text: P R E L IM IN A R Y - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V 1 7 8 0 5 A -6 0 /7 0 /6 0 L /7 0 L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,1 52x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V17805A
A6070M
780sa
7805A PI
81V17805
81v17805a
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY 2 M X 8 BIT HYPER PAGE OD E MB81V1 f oUOtí-OU/"160/7 0 A C D C A / CRA D ’ M>0L i CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17805B features a “hyper page” mode of operation whereby
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OCR Scan
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MB81V1
MB81V17805B
1024x8
D-63303
F9712
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor V17805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V17805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V17805A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The V17805A is
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OCR Scan
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MSM51V17805A
152-Word
MSM51V17805A
28-pin
cycles/32
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATASHEET n e n , HnHnc « c D S 0 5 -1 0 1 9 5 -2 E MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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OCR Scan
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MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
C28058S-2C
MB81V17805A-60/-60L/-70/-70L
28-LEAD
FPT-28P-M14)
F28040S-1C
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PDF
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
V17805A-
144-pin
158x2
0070x2
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM V17805B-50/-60 CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17805B features a “hyper page” mode of operation whereby
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OCR Scan
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MB81V17805B-50/-60
MB81V17805B
MB81V17805B
F28040S-2C-1
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PDF
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 2 .0 DATA SHEET EDC2UV6482- 60/70 (J/T)G-S 16MByte (2Mx64) CMOS EDO DRAM Module-3.3V General Description The EDC2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga nized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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EDC2UV6482-
16MByte
2Mx64)
16-megabyte
168-pins,
V17805A-
16MByttime
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU — DATASHEET EDC2B V7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282-(60/70)JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V7282-
16MByte
EDC2BV7282-
16-megabyte
168-pins,
V17805A-
74ABT16244
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: cP June 1996 Revision 1.0 FUJI' DATA SHEET - * EDC2U V7282- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga
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OCR Scan
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V7282-
16MByte
EDC2UV7282-
16-megabyte
168-pins,
V17805A-
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PDF
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Untitled
Abstract: No abstract text available
Text: m a a m M m a a a a a a a a m i l l l i l I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I ^ UKÊ^ÊÊUÊHnKHÊm ÊÊÊ V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM
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MB81V17805A-60/60L/-70/70L
MB81V17805A
F9611
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PDF
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 2.0 FUJI' DATA SHEET - * EDC2U V6482- 60/70 (J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga
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OCR Scan
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V6482-
16MByte
EDG2UV6482-
16-megabyte
168-pins,
V17805A-
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM V17805B-50/-60/-50L/-60 L CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17805B features a “hyper page” mode of operation whereby
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OCR Scan
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MB81V17805B-50/-60/-50L/-60
MB81V17805B
MB81V17805B
MB81V17805B-50/-60/-50L/-60L
28-pin
FPT-28P-M14)
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM 5 i DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +706C Organization (Wxb) Part Number Access Time max. (ns) Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Operating MB81V17800A-60 60[15¡'1 110[40]*3 432 M B81V 17800A-70
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MB81V17800A-60
7800A-70
B81V17800A-60L
MB81V17800A-70L
V17800B-50
MB81V17800B-60
MB81V17800B-50I
MB81V17800B-60L
MB81V17805A-60
MB81V17805A-70
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