V1J diode
Abstract: DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Lead Pb -free (“PbF” suffix)
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10MQ100NPbF
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J marking code
Diodes v1j
MARKING CODE V1J
V1j marking code
V1J SMA
DIODE V1J
95029 MARKING
SMA V1J diode
Diode marking code v1j
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V1J diode
Abstract: DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code 10MQ100NPBF v1J Datasheet 95029 10MQ100 95029 MARKING
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term
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Original
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10MQ100NPbF
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J
MARKING V1J
V1j marking code
DIODE V1J marking code
v1J Datasheet
95029
10MQ100
95029 MARKING
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PDF
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V1J diode
Abstract: DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER
Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB • Compliant to RoHS directive 2002/95/EC
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Original
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10BQ100PbF
2002/95/EC
10BQ100PbF
18-Jul-08
V1J diode
DIODE V1J marking code
DIODE V1J
Diode marking code v1j
V1J DO-214AA
Diodes v1j
95029 MARKING
V1j marking code
MARKING CODE V1J
v1j RECTIFIER
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PDF
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V1J diode
Abstract: DIODE V1J 10bq100pbf DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code
Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term
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Original
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10BQ100PbF
10BQ100PbF
18-Jul-08
V1J diode
DIODE V1J
DO-214AA, SMB
v1J Datasheet
V1j marking code
DIODE V1J marking code
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PDF
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DIODE V1J marking code
Abstract: V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
18-Jul-08
DIODE V1J marking code
V1J diode
10bq100pbf
V1j marking code
Diode marking code v1j
VS-10BQ100
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diode SMA marking code PB
Abstract: V1J diode 94119
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
11-Mar-11
diode SMA marking code PB
V1J diode
94119
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PDF
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V1J diode
Abstract: DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Compliant to RoHS directive 2002/95/EC
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Original
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10MQ100NPbF
2002/95/EC
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J marking code
DIODE V1J
V1j marking code
MARKING CODE V1J
Diodes v1j
Diode marking code v1j
SMA V1J
94119
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PDF
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V1J diode
Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
18-Jul-08
V1J diode
V1j marking code
DIODE V1J marking code
Diodes v1j
vs10mq100npbf
DIODE V1J
Diode marking code v1j
V1J SMA
VS-10MQ100N
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V1J diode
Abstract: DIODE V1J marking code V1J DO-214AA
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
11-Mar-11
V1J diode
DIODE V1J marking code
V1J DO-214AA
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PDF
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V1j marking code
Abstract: V1J diode
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
11-Mar-11
V1j marking code
V1J diode
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PDF
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V1J diode
Abstract: DIODE V1J
Text: OMS305 OMS305A QMS405 3 PHASE, LOW VOLTAGE, LOW RDS on > MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e , 50 Volt, 15 To 45 A m p B r i d g e W i th C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A L o w Profile P a c k a g e FEATURES
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OCR Scan
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OMS305
OMS305A
QMS405
100um
V1J diode
DIODE V1J
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PDF
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V1J diode
Abstract: No abstract text available
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V1J diode
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PDF
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DIODE V1J marking code
Abstract: Diodes v1j DIODE V1J V1J diode V1J DO-214AA
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
11-Mar-11
DIODE V1J marking code
Diodes v1j
DIODE V1J
V1J diode
V1J DO-214AA
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DIODE V1J marking code
Abstract: VS-10MQ100N VS-10MQ100 vs-10mq V1j marking code Diodes v1j SMA V1J diode VS10m VS-10MQ100NPbF
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
DIODE V1J marking code
VS-10MQ100N
VS-10MQ100
vs-10mq
V1j marking code
Diodes v1j
SMA V1J diode
VS10m
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Untitled
Abstract: No abstract text available
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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94119
Abstract: No abstract text available
Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA
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Original
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VS-10MQ100NPbF
J-STD-020,
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
94119
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PDF
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10BQ100PbF
Abstract: No abstract text available
Text: VS-10BQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term
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Original
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VS-10BQ100PbF
J-STD-020,
VS-10BQ100PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
10BQ100PbF
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IC905
Abstract: pa1550 transistor BC 945 ATID
Text: C o m p o u n d Field Effect T ran s is to r A rra y ju P A 1 5 5 0 07 N ^ : ? . ; U / \ r - M O S FET x fi PA15501Ì, 77 W i f f l FETT'5 V * > g * I C OtiiiJ tC«t 5 ¡tfê ig B *^"51^4' X -f ^ 7s/ W * T to 26.8 MAX. 2, V 1 //< K , 4.0 7 > y < 7 * J tC ® S T l-0
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uPA1550
0t-10t-
IC905
pa1550
transistor BC 945
ATID
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode • High frequency operation Anode • Guard ring for enhanced ruggedness and long term
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Original
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VS-10MQ100NPbF
J-STD-020,
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: ICX039BNA SONY» 1/2 inch CCD Image Sensor for PAL Color Camera Description Package Outline The ICX039BNA is an interline transfer CCD solidstate image sensor suitable for PAL 1/2 inch color video cameras. High resolution and high sensitivity are achieved through the adoption of Ye, Cy, Mg and G
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ICX039BNA
ICX039BNA
1/100s.
1/10000S.
000b3S0
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RTXP24
Abstract: RELZ100 ABB STT 111 distance relay RTXP 18 depth earth BUSBAR calculation power line carrier communication abb calculation diSTANCE relay REL 300 10VA BUSBAR calculation
Text: Type RE L 100/RELZ 100 ~ ., .~ 1MPBO600~EN ~ page March 992 Chan since August 1990 Data s bject to change wilhoul nolice Line protection ABB Network Controi & Protection 90642 Features Application -Simultaneous phase and earth distance measurement with individual numerical
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100/RELZ
1MPBO600
1MDUO6004-EN
1MDUO6012-EN
100/REOR
MDB10004-EN
1MDB10006-EN
MDBO6004-EN
RTXP24
RELZ100
ABB STT 111
distance relay
RTXP 18 depth
earth BUSBAR calculation
power line carrier communication abb
calculation diSTANCE relay REL 300
10VA
BUSBAR calculation
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54123 application as pulse generator
Abstract: SVI 3003 FLJ445 ANB I AD smd transistor marking 12G 31114 J006 LR 3441 multi vibrator circuit SMD TRANSISTOR MARKING 9b
Text: MIL-M-38510/12G MIL-M-38510/12F 4 A p r i 1 1980 •1 MILITARY SPEC IFIC ATIO N MIC ROCIRCUITS, D IG IT A L , BIPOLA R, TTL , MONOSTABLE MULTIVIBRATORS, MONOLITHIC SIL1C01J T h i s s p e c i f i c a t i o n is ments and A g e n c ie s 1. approved f o r use by a l l D e p a r t
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MIL-M-38510/12G
MIL-M-38510/12F
10N0STABLE
MIL-M-38510.
385io.
MIL-M-38510
54123 application as pulse generator
SVI 3003
FLJ445
ANB I AD
smd transistor marking 12G
31114
J006
LR 3441
multi vibrator circuit
SMD TRANSISTOR MARKING 9b
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lm 16151
Abstract: 4011N GT-64060
Text: Galileo. GT-64060 High Integration PCI Bridge/ Memory Controller Please contact Galileo Technology for possible updates befor e finalizing a design FEATURES • High-in teg ration PCI bridge/memory controller with three bus architecture - 32-bit Device/Memory Bus
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GT-64060
32-bit
50MHz
150Mbytes/sec
512MB
256KB-16MB
32-bit,
lm 16151
4011N
GT-64060
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