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    Amphenol Piher PS15NV60-103A3030-PM

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    onsemi NSV60101DMTWTBG

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    Amphenol Piher PS10KV60-104A3030-PM

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    V6010 Datasheets (10)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    V60100C Vishay Siliconix Dual High-Voltage Trench MOS Barrier Schottky Rectifier Original PDF
    V60100C-5700M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY DUAL TO-220AB Original PDF
    V60100C-E3/4W Vishay Siliconix Dual High-Voltage Trench MOS Barrier Schottky Rectifier Original PDF
    V60100CHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 60A 100V TO-220AB Original PDF
    V60100C-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 60A 100V TO-220AB Original PDF
    V60100P-E3/45 Vishay Semiconductors Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 30A TO247AD Original PDF
    V60100PW-E3 Vishay Semiconductors DIODE SCHOTTKY ARRAY 100V TO-3PW Original PDF
    V60100PW-M3/4W Vishay General Semiconductor Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 30A TO3PW Original PDF
    V60/10DP Unknown Discontinued Transistor Data Book 1975 Scan PDF
    V60/10P Unknown Discontinued Transistor Data Book 1975 Scan PDF

    V6010 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    V60100C

    Abstract: No abstract text available
    Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100C O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 V60100C PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    V60100C

    Abstract: No abstract text available
    Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. V60100C PDF

    V60100C

    Abstract: No abstract text available
    Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100C O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 V60100C PDF

    Untitled

    Abstract: No abstract text available
    Text: V60100PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100PW 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB 22-B106 O-220AB) PDF

    V60100C

    Abstract: No abstract text available
    Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11 V60100C PDF

    V60100C

    Abstract: VB60100C JESD22-B102 J-STD-002 7030D
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power losses


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB O-220AB) 2002/95/EC V60100C VB60100C JESD22-B102 J-STD-002 7030D PDF

    V60100PW-M3/4W

    Abstract: J-STD-002 diode package outline V60100PW
    Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100PW 22-B106 2002/95/EC 2002/96/EC 18-Jul-08 V60100PW-M3/4W J-STD-002 diode package outline V60100PW PDF

    V60100

    Abstract: V60100C
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, 22-B106 O-220AB) 2002/95/EC 2002/96/EC V60100 V60100C PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product V60100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100P 2002/95/EC 2002/96/EC O-247AD 08-Apr-05 PDF

    VB60100C

    Abstract: V60100C
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-220AB) 2002/95/EC 2002/96/EC VB60100C V60100C PDF

    JESD22-B102

    Abstract: J-STD-002 V60100C VB60100C
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB O-220AB) 2002/95/EC JESD22-B102 J-STD-002 V60100C VB60100C PDF

    0824D

    Abstract: No abstract text available
    Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100PW 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 0824D PDF

    J-STD-002

    Abstract: V60100C VB60100C
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB 22-B106 O-220AB) J-STD-002 V60100C VB60100C PDF

    V60100C

    Abstract: J-STD-002
    Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC 2002/96/EC O-220Alectual 18-Jul-08 V60100C J-STD-002 PDF

    JESD22-B102D

    Abstract: J-STD-002B
    Text: V60100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100P O-247AD 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B PDF

    V60100P

    Abstract: JESD22-B102 J-STD-002
    Text: New Product V60100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100P O-247AD 2002/95/EC 2002/96/EC 18-Jul-08 V60100P JESD22-B102 J-STD-002 PDF

    V60100C

    Abstract: J-STD-002 VB60100C
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB 22-B106 O-220AB) V60100C J-STD-002 VB60100C PDF

    Untitled

    Abstract: No abstract text available
    Text: V60100C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    v60100c

    Abstract: V60100C equivalent V60*100c JESD22-B102D J-STD-002B trench mos
    Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100C O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 v60100c V60100C equivalent V60*100c JESD22-B102D J-STD-002B trench mos PDF

    V60100C

    Abstract: No abstract text available
    Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		V60100C O-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. V60100C PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		V60100PW 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    V60100C

    Abstract: VB60100C JESD22-B102 J-STD-002 88942
    Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power


    Original     		V60100C VB60100C O-220AB O-263AB J-STD-020, O-263AB O-220AB) 2002/95/EC V60100C VB60100C JESD22-B102 J-STD-002 88942 PDF