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    V82FI Search Results

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    STMicroelectronics STHV82FI

    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Power Field-Effect Transistor, 3.6A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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    ComSIT USA STHV82FI 226
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    V82FI Datasheets Context Search

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    STHV82

    Abstract: sthv 82
    Text: £jï 82 82 SGS-THOMSON ULKgraMOeS STHV STHV FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV82 S TH V82FI 800 V 800 V • . . . . . . RDS on < 2 0 < 2 0 Id 5 .5 A 3 .6 A TYPICAL RDS(on) = 1 -65 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STHV82 V82FI sthv 82

    STHV82

    Abstract: STHV82FI
    Text: *57 SGS-THOMSON ¡[LiOTMÛS STHV82 V82FI — N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH V82 STH V82FI V dss R D S o n Id 800 V 800 V 2 n 2 ÍÍ 5 .5 A 3 .6 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF V82FI STHV82 STHV82FI V82/F' STHV82FI

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    12N60FI

    Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90


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    PDF 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL