Untitled
Abstract: No abstract text available
Text: r = 7 ^ 7 ^ S C S -T H O M S O N M28F101 RfflD @i Li©ÜWROD(Sl CMOS 1 Megabit (128K x 8, Chip Erase FLASH MEMORY ADVA N CE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: lOO^AMax ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
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M28F101
100ns
M28F101
M28Fctivated
PDIP32
PLCC32
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Untitled
Abstract: No abstract text available
Text: 52E D 7 ^ 2 3 7 G03777Ô b ô3 ISGTH T ~ K -\i -2 £ S G S -1 H 0 M S 0 N M28F101 io S f, S - T H O M S O N CMOS 1 Megabit 128K x 8 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 10OpA Max 10,000 ERASE/PROGRAM CYCLES
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G03777Ô
M28F101
100ns
10OpA
M28F101
D037713
PDIP32
PLCC32
PTS032
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2A153
Abstract: 7W32 M28F101
Text: /=T SGS-IHOMSON 1 1 » HOIgWlilUEgT^SMlgS M28F101 *> CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100|iA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10^s
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M28F101
100ns
M28F101
VA00667
VA00670
2A153
7W32
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