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    ITT Interconnect Solutions FRVE89VA32A-48S-338-0401-VO

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    SMC Corporation of America LVA32A-03-C

    HIGH PURITY CHEMICAL VALVE, AIR OPERATED, LVA SERIES | SMC Corporation LVA32A-03-C
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    SMC Corporation of America LVA32A-03N-C

    HIGH PURITY CHEMICAL VALVE, AIR OPERATED, LVA SERIES | SMC Corporation LVA32A-03N-C
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    ITT Interconnect Solutions FRVE89VA32A48S3380401+

    FRVE89VA32A-48S-338-0401-VO
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    ITT Interconnect Solutions FRVE89VA32A-48S-338-0401-V

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    VA32A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VA32A National Semiconductor 32 Lead Molded Plastic Leaded Chip Carrier Original PDF

    VA32A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VA32A

    Abstract: No abstract text available
    Text: 32 Lead Molded Plastic Leaded Chip Carrier NS Package Number VA32A All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL


    Original     		PDF VA32A VA32A

    27C010

    Abstract: 27C040 27C256 FM27C512 FM27C512Q
    Text: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		PDF FM27C512 288-Bit FM27C512 wait-st1793-856858 27C010 27C040 27C256 FM27C512Q

    27C512 National Semiconductor

    Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
    Text: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up


    Original     		PDF NM27C020 152-Bit NM27C020 27C512 National Semiconductor 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020Q

    National Controls ne 545

    Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process


    Original     		PDF NM27C020 152-Bit NM27C020 100ns National Controls ne 545 27C010 27C040 27C080 27C256 27C512 eprom connection NM27C020N fairchild eprom

    va32a

    Abstract: No abstract text available
    Text: October 1993 DP802518 TROPIC Tsunami TM TROPIC II TM Microcode ROM General Description Features The DP802518 Tsunami is the microcode device for the high performance Token Ring Protocol Interface Controller TROPIC II Token Ring chipset this device features an


    Original     		PDF DP802518 DP80253 28-pin 32-pin DP802518V VA32A va32a

    C1995

    Abstract: J32AQ NM27C040 VA32A
    Text: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through


    Original     		PDF NM27C040 304-Bit NM27C040 304-bit C1995 J32AQ VA32A

    NM27C010

    Abstract: No abstract text available
    Text: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with


    Original     		PDF NM27C010 576-bit 128K-words 28-pin ds010798

    NM27C256

    Abstract: 27C080 27C010 27C020 27C040 27C256 27C512 C1995
    Text: NM27C256 262 144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM27C256 is a 256K Electrically Programmable Read Only Memory It is manufactured in National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 120 ns access time over the full operating


    Original     		PDF NM27C256 144-Bit NM27C256 20-3A 27C080 27C010 27C020 27C040 27C256 27C512 C1995

    27C080

    Abstract: 27C010 27C020 27C040 27C256 C1995 NM27P512 27C256 DIP
    Text: NM27P512 524 288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM configured as 64k x 8 It’s designed to simplify microprocessor interfacing while remaining compatible with standard


    Original     		PDF NM27P512 288-Bit NM27P512 27C080 27C010 27C020 27C040 27C256 C1995 27C256 DIP

    VA32A

    Abstract: No abstract text available
    Text: Package Outlines 32 Lead Molded Plastic Leaded Chip Carrier Package Number VA32A A 1 0.01510.38] S': C | 0-E.F-G 'S i| “ ,L 0.027-0.033 10.69-0.S4] Section B-B Typical All dim ensions are in inches (millimeters unless otherwise noted 709 www.fairchfldsemi.com


    OCR Scan     		PDF VA32A VA32A

    Untitled

    Abstract: No abstract text available
    Text: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G


    OCR Scan     		PDF NM27LV010B 576-Bit 27LV010B 20-3A

    M27C040

    Abstract: 27C040Q
    Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide


    OCR Scan     		PDF NM27C040 304-Bit 27C040 304-bit 120ns M27C040 27C040Q

    6755w

    Abstract: No abstract text available
    Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­


    OCR Scan     		PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 6755w

    27C010X

    Abstract: No abstract text available
    Text: M IC O N D U C T D R Ju ly 1998 tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Program mable R e a d o n ly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide JEDEC EPROMs


    OCR Scan     		PDF FM27C040 304-Bit 304-bit 27C010X

    M27G512

    Abstract: 27G512
    Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 64K words with 8 bits per word. Any byte can be


    OCR Scan     		PDF FM27C512-L 288-Bit FM27C512 512Kbit, 256Kb M27G512 27G512

    27C512N

    Abstract: No abstract text available
    Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into


    OCR Scan     		PDF FM27C512L FM27C512L 288-Bit 64Kx8) FM27C512 512Kbit, 27C512 256Kb 27C512N

    Untitled

    Abstract: No abstract text available
    Text: Ju ly 1998 M IC O N D U C T D R tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM General Description • Programming Voltage +12.75V ■ Typical programm ing tim e 50|is The FM 27C010 is a lo w -po w e r 1 Mbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into 128K


    OCR Scan     		PDF FM27C010L 576-Bit 128Kx8) 27C010 FM27C010 256Kb

    27C020

    Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
    Text: tm NM27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with


    OCR Scan     		PDF NM27C128 072-Bit NM27C128 quick93-856856 27C020 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512

    1N914

    Abstract: A14C N28B NM27C512 VA32A
    Text: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or­


    OCR Scan     		PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 512Kb 150ns 1N914 A14C N28B NM27C512 VA32A

    NM27C010

    Abstract: NM27LV010 PTFC
    Text: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National's latest 1.2/x CMOS split gate SVG EPROM technology. This technology allows the part to operate at


    OCR Scan     		PDF NM27LV010 576-Bit NM27LV010 NM27C010 PTFC

    Untitled

    Abstract: No abstract text available
    Text: semiconductor NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM27C256 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate


    OCR Scan     		PDF NM27C256 144-Bit NM27C256

    NM27C128Q

    Abstract: No abstract text available
    Text: NM 27C 128 131,072-Bit 16K x 8 High P erform ance CM O S EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as


    OCR Scan     		PDF 072-Bit NM27C128 100ns 20-3A NM27C128Q

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D L C T D R A p ril 1 9 9 8 tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27C010 is a low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K


    OCR Scan     		PDF FM27C010L 576-Bit 128Kx8) FM27C010

    Untitled

    Abstract: No abstract text available
    Text: July 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming V oltage + 1 2.7 5V ■ Typical programm ing tim e 50ns T h e F M 2 7 L V 5 1 2 is a low voltage, low-power 512Kbit, 3.3V-only


    OCR Scan     		PDF FM27LV512L 288-Bit FM27LV512 512Kbit, 150ns, 512Kb 150ns