toshiba lcd inverter pinout
Abstract: 20X2 LCD DISPLAY PINOUT FC - 7D 2a2b PHILIps monochrome monitor schematic LCD display 20X2 Philips pixels matrix LCD controller driver PHILIPS colour television schematic project for 2n2222 NEC 0C00 lcd tv inverter board schematic
Text: Page 3 Epson Research and Development Vancouver Design Center Customer Support Information Comprehensive Support Tools Seiko Epson Corp. provides to the system designer and computer OEM manufacturer a complete set of resources and tools for the development of graphics systems.
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S1D13505
X23A-G-012-02
V832TM
toshiba lcd inverter pinout
20X2 LCD DISPLAY PINOUT
FC - 7D 2a2b
PHILIps monochrome monitor schematic
LCD display 20X2
Philips pixels matrix LCD controller driver
PHILIPS colour television schematic
project for 2n2222
NEC 0C00
lcd tv inverter board schematic
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ci 4073
Abstract: 4073 cmos IC 4073 cmos 4073 4073 SO56-2 IDT74LVCH16952A LVCH16952A 431A8
Text: IDT74LVCH16952A 3.3V CMOS 16-BIT REGISTERED VANCE INFORMATION TRANSCEIVER WITH 5 VOLT TOLERANT I/O Integrated Device Technology, Inc. vanced dual metal CMOS technology. These high-speed, low power devices are organized as two independent 8-bit D-type registered transceivers with separate input and output control
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IDT74LVCH16952A
16-BIT
O56-1)
SO56-2)
O56-3)
ci 4073
4073 cmos
IC 4073
cmos 4073
4073
SO56-2
IDT74LVCH16952A
LVCH16952A
431A8
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SED1355FOA
Abstract: toshiba lcd inverter pinout beta transistor 2N2222 toshiba lcd power board schematic VR4102 4 bit gray to binary converter circuit CI 4001 CON40A 320x240 VHDL hitachi diagram inverter 12v 5v 3.3v 24v
Text: Epson Research and Development Vancouver Design Center Page 3 Customer Support Information Comprehensive Support Tools Seiko Epson Corp. provides to the system designer and computer OEM manufacturer a complete set of resources and tools for the development of graphics systems.
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Original
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SED1355
X23A-G-012-01
V832TM
SED1355FOA
toshiba lcd inverter pinout
beta transistor 2N2222
toshiba lcd power board schematic
VR4102
4 bit gray to binary converter circuit
CI 4001
CON40A
320x240 VHDL
hitachi diagram inverter 12v 5v 3.3v 24v
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E 13007
Abstract: imo rfi filter Temic Semiconductors U2781B U2781B-AFS U2781B-AFSG3
Text: Tem ic U2781B S e m i c o n d u c t o r s Frequency Synthesizer Description The programmable frequency synthesizer IC U2781B for iP controlled application is realized with Telefunken ad vanced UHF process, which is very suitable for combinations of fast ECL logic and low current I2L logic.
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U2781B
U2781B
SS020)
D-74025
03-Sep-97
E 13007
imo rfi filter
Temic Semiconductors
U2781B-AFS
U2781B-AFSG3
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED DUAL 1-0F-4 DECODER IDT54AHCT139 FEATURES: DESCRIPTION: • Equivalent to ALS speeds and output drive over full temperature and voltage supply extremes The ID T54AH C T139 are dual 1-of-4 decoders built using ad vanced C E M O S , a dual metal C M O S technology. The device
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IDT54AHCT139
T54AH
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 256K 32K x 8-BIT PRELIMINARY IDT71B256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 ad vanced high-speed B iC M O S static RAM • Equal acce ss and cycle tim es — C om m ercia l: 10 /12/15ns • O ne C hip S elect plus one O utput E nable pin
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IDT71B256SA
/12/15ns
28-pin
200mV
71B256
300-m
P28-2)
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 20-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS FEATURES: - IDT74ALVC16841 vanced dual metal CMOS technology. The ALVC16841 fea tures 3-state outputs designed specifically for driving highly capacitive relatively low-impedance loads. This device is
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20-BIT
IDT74ALVC16841
ALVC16841
10-bit
20-bit
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 18-BIT REGISTER IDT54/74FCT16823AT/BT/CT/ET IDT54/74FCT162823AT/BT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Comm on features: T h e F C T 16 8 2 3 A T /B T /C T /E T and F C T 16 2 8 2 3 A T /B T /C T / E T 18 -bit bus in te rfa ce re g iste rs a re b u ilt using ad vanced ,
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18-BIT
IDT54/74FCT16823AT/BT/CT/ET
IDT54/74FCT162823AT/BT/CT/ET
00E3DÃ
IDT54/74FCT16823AT/BT/CT/ET,
162823AT/BT/CT/ET
18-BIT
MlL-STD-883,
S056-1)
S056-2)
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Untitled
Abstract: No abstract text available
Text: A U T O M O T IV E VER SION HMCS414C HD614140 4-Bit CMOS Microcomputer AD VANCE INFORMATION The HMCS414C is a CMOS 4-bit single-chip m icrocomputer with characteristics o f high performance and low power dissipa tion. It has efficient and powerful architecture same as
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HMCS414C
HD614140)
HMCS414C
HMCS400
CS414C
10-bit
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Untitled
Abstract: No abstract text available
Text: IDT74LVC1G125A 3.3V CMOS VANCE INFORMATION SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - The LVC1G125A single bus buffer gate is built using ad vanced dual metal CMOS technology. The LVC1G125A is de signed for 1,65V to 3.6V V cc operation and features indepen
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IDT74LVC1G125A
LVC1G125A
IDT74LVC1G79A.
IDT74ALVC1G04.
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Untitled
Abstract: No abstract text available
Text: IDT74FCT163827A/B/C 3.3V CMOS 20-BIT BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 M IC RO N CM O S Technology The FCT163827A/B/C 20-bit buffers are built using ad vanced dual metal CM O S technology. These 20-bit bus drivers provide high-performance bus interface buffering for
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IDT74FCT163827A/B/C
20-BIT
FCT163827A/B/C
20-bit
10bit
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Untitled
Abstract: No abstract text available
Text: P H S IG E C p l e s s e y AD VANC E INFORMATION 3047 3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition The SL6442 UHF Amplifier and Mixer is designed for use in cordless telephones, cellular telephones, pagers and lowpower receivers operating at frequencies up to 1GHz. It
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SL6442
SL6442
422pF
100nF
3515nH
100nH
950MHz
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Untitled
Abstract: No abstract text available
Text: p g a a G E C P L E S S E Y J B E i AD VANC E INFORMATION 3 0 4 7 -3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition Th e SL6442 U H F A m p lifie r and M ixer is desig n ed fo r use in cordless telephones, c e llu la r telephones, pagers and lowp o w e r receivers operating at fre q u en cies up to 1GHz It
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SL6442
SL6442
100nH
950MHz
SLS442
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Untitled
Abstract: No abstract text available
Text: November 1995 Semiconductor MM54HC257/MM74HC257 Quad 2-Channel TRI-STATE Multiplexer General Description This QUAD 2-TO-1 line data selector/multiplexer utilizes ad vanced silicon-gate CMOS technology. Along with the high noise immunity and low power dissipation of standard
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MM54HC257/MM74HC257
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Untitled
Abstract: No abstract text available
Text: AD VANCED PO W ER Te c h n o l o g y APT6035BN 600V 19.0A 0.350 POWER MOS IV N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: TQ = 25°C unless otherwise specified. Parameter Drain-Source Voltage V DSS APT6035BN
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APT6035BN
O-247AD
D00E233
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: « i » m ir A d vanced P roduct Inform ation S e p te m b e r 1996 1 o f 2 CMM0330 824 to 928 MHz 3V, 30.5 dBm Multi-Mode Power Amplifier Features □ Multi-Mode Operation from 3V Supply □ 40% Linear Power Added Efficiency □ 30 dBm with 55% Power Added Efficiency
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CMM0330
IS-136/AMPS
CMM0330
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 20-BIT BUFFERS IDT54/74FCT163827A/B/C VANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology The FCT163827A/B/C 20-bit buffers are built using ad vanced dual metal CMOS technology. These 20-bit bus
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20-BIT
IDT54/74FCT163827A/B/C
FCT163827A/B/C
20-bit
10bit
10-3M-20T0
46B5771
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Untitled
Abstract: No abstract text available
Text: 3.3V C M O S 16-BI T BUS T R A N S C E I V E R / REGISTERS IDT74ALVCH1 6646 VANCE INFORMATION Int egra ted Device Technology, inc. vanced dual metal CMOS technology. The high-speed, low power devices are organized as two independent 8-bit bus transceivers with 3-state D-type registers. The control cir
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16-BI
IDT74ALVCH1
MIL-STD-883,
200pF,
drw09
16-BIT
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Intel 2118
Abstract: MB811B-10 DIP-16P-M01
Text: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage
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384-BIT
MB8118
M88118
16-pin
MB8118-10/MB8118-12
16-LEAD
IP-16C-C03
DIP-16P-M01
Intel 2118
MB811B-10
DIP-16P-M01
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M3025
Abstract: 5a3l
Text: 37E D • 4 3 0 2 27 1 O O E b l b b M I IHAS . High-Reliability vanced C M O S Logic ICs H A RR IS S E M I C O N D S E CT OR CD54AC7623/3A Octal-Bus Transceiver, 3-State B Side , Open-Drain (A Side), Non-Inverting The R CA CD54AC7623/3A and CD54ACT7623/3A are octalbus transceivers that utilize the new R C A AD VANCED
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CD54AC7623/3A
CD54ACT7623/3A
CD54ACT7623/3A
CD54AC/
ACT623/3A.
F--09
M3025
5a3l
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8 channel remote control transmitter circuit
Abstract: ML923 SL490 Plessey sl490
Text: ML923 A d vance in fo rm a tio n is issued to advise C u s to m e rs o f new a d d itio n s to th e Plessey S e m ic o n d u c to rs range w h ich, nevertheless, s till have *p re -p ro d u c tio n ' s ta tu s . D e tails given may, therefore, change w ith o u t n o tic e a lth o u g h we w o u ld expe ct th is perform ance data to
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ML923
ML923
600mW
8 channel remote control transmitter circuit
SL490
Plessey sl490
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Untitled
Abstract: No abstract text available
Text: AD VANCED INFORMA TION :î CYPRESS SEMICONDUCTOR 7-ns BiCMOS PAL with Output Latches Features Functional Description • Very high performance programmable logic device for high-speed interface circuits — tp o = 7 ns — tLO = 5.5 ns • 12 inputs • 8 latched outputs
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CY7C339
28-pin
300-mil
CY7C339
24x32
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APT1001R1AN
Abstract: APT1001R3AN
Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î VANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT1001R1AN
APT901R1
APT1001R3AN
APT901R3AN
901R1AN
1001R1
901R3AN
1001R3AN
O-204AA)
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