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    VARIABLE RESISTOR 10K OHM 8*8 MM Search Results

    VARIABLE RESISTOR 10K OHM 8*8 MM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC522A/B2A Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701M2A) Visit Rochester Electronics LLC Buy
    CLC522A/BCA Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701MCA) Visit Rochester Electronics LLC Buy
    148-13 Coilcraft Inc Variable Inductor, Air-Core, 7528 Visit Coilcraft Inc Buy
    148-11 Coilcraft Inc Variable Inductor, Air-Core, 7528 Visit Coilcraft Inc Buy
    146-06L Coilcraft Inc Variable Inductor, Air-Core, Unshielded, 2727 Visit Coilcraft Inc Buy

    VARIABLE RESISTOR 10K OHM 8*8 MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HMC680LP4 / 680LP4E v00.0308 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +37 dBm (At all gain settings)


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    PDF HMC680LP4 680LP4E

    39k ohm resistor

    Abstract: Variable resistor 10K ohm 10K variable resistor variable capacitor ETC1-1-13 H680
    Text: HMC680LP4 / 680LP4E v02.0209 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)


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    PDF HMC680LP4 680LP4E ETC1-1-13) 39k ohm resistor Variable resistor 10K ohm 10K variable resistor variable capacitor ETC1-1-13 H680

    39k ohm resistor

    Abstract: No abstract text available
    Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)


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    PDF HMC680LP4 680LP4E 39k ohm resistor

    Untitled

    Abstract: No abstract text available
    Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features the HmC680lp4 e is ideal for: ttl/CmOs compatible parallel or latched parallel control interface • Cellular/3g infrastructure High Output ip3: +40 dbm (at all gain settings)


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    PDF HMC680LP4 680LP4E ETC1-1-13)

    ETC1-1-13

    Abstract: MC680L H680 HMC680LP4E
    Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)


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    PDF HMC680LP4 680LP4E ETC1-1-13) ETC1-1-13 MC680L H680 HMC680LP4E

    Untitled

    Abstract: No abstract text available
    Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz FEBRUARY 2000 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a


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    PDF HMC173MS8 HMC173MS8

    lot date code panasonic

    Abstract: Variable resistor 200K ohm
    Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz SEPTEMBER 1999 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a


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    PDF HMC173MS8 HMC173MS8 800-1ave lot date code panasonic Variable resistor 200K ohm

    lot code panasonic

    Abstract: Variable resistor 200K ohm HMC173MS8 AD822 D-35 LL4148 lot date code panasonic Resistor
    Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz FEBRUARY 2001 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a


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    PDF HMC173MS8 HMC173MS8 lot code panasonic Variable resistor 200K ohm AD822 D-35 LL4148 lot date code panasonic Resistor

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATA SHEET SFP TRANSCEIVER for SONET/SDH HTR6713 Series for OC-3 IR-1 up to 15km http://www.hitachi-cable.co.jp/ Ref. No.:TE05-01-58-9038G Mar. ‘05 Page 1 of 14 Features l SONET OC-3 IR-1 (155.52Mbit/s, 15km) and SDH STM-1(S-1.1) compliant. (Also compatible


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    PDF HTR6713 TE05-01-58-9038G 52Mbit/s, 125Mbit/s EN60825-1

    YAGEO C0603 X7R

    Abstract: KEMET CAP CER COG CHIP 0603 smd Variable resistor 10K ohm SMD RESISTOR 60 OHMS FERRITE L0603 KEMET 1NF 50V 20 SM 0603 0402 X7R 22NF 25v P9812 c2627 equivalent C84-85
    Text: 1.0 Design Description This reference design implements a High IF Receiver circuit that utilizes an LMH6515 DVGA and ADC14V155 Analog to Digital Converter ADC . The design illustrates variable gain IF amplification and digitization in wireless infrastructure systems and frequency domain analyzers. This flexible subsystem provides excellent sensitivity for input signal frequencies


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    PDF LMH6515 ADC14V155 LMH6515, 14-bit, CSP-9-111S2) CSP-9-111S2. RD-146 YAGEO C0603 X7R KEMET CAP CER COG CHIP 0603 smd Variable resistor 10K ohm SMD RESISTOR 60 OHMS FERRITE L0603 KEMET 1NF 50V 20 SM 0603 0402 X7R 22NF 25v P9812 c2627 equivalent C84-85

    Untitled

    Abstract: No abstract text available
    Text: HMC628LP4 / 628LP4E v02.0108 BiCMOS MMIC 5-Bit DIGITAL VARIABLE GAIN AMPLIFIER, 50 - 800 MHz Typical Applications Features The HMC628LP4 E is ideal for: TTL/CMOS compatible serial, parallel or latched parallel control interface • Cellular/3G Infrastructure


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    PDF HMC628LP4 628LP4E

    1184-15

    Abstract: No abstract text available
    Text: HMC628LP4 / 628LP4E v02.0108 BiCMOS MMIC 5-Bit DIGITAL VARIABLE GAIN AMPLIFIER, 50 - 800 MHz Typical Applications Features The HMC628LP4 E is ideal for: TTL/CMOS compatible serial, parallel or latched parallel control interface • Cellular/3G Infrastructure


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    PDF HMC628LP4 628LP4E 1184-15

    ph c15 diode

    Abstract: ph c10 zener diode 34262 ph c15 zener ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC ELECTRONIC BALLAST 36W circuit diagram resistor* 22k ohm C15 ph zener IR2159 rga-ef25
    Text: IRPLDIM1 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA IR2159 Dimming Ballast Control IC Design Kit Features = Drives: = = = = = = = 1 x 32W T8 Lamp IRPLDIM1U 1 x 36W T8 Lamp (IRPLDIM1) Input: 90-140VAC/60Hz (IRPLDIM1U) 185-265VAC/50Hz (IRPLDIM1)


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    PDF IR2159 90-140VAC/60Hz 185-265VAC/50Hz IR2159. ph c15 diode ph c10 zener diode 34262 ph c15 zener ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC ELECTRONIC BALLAST 36W circuit diagram resistor* 22k ohm C15 ph zener rga-ef25

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATA SHEET SFP TRANSCEIVER for SONET/SDH HTR6413 Series for OC-12 IR-1 up to 15km http://www.hitachi-cable.co.jp/ Ref. No.:TE-05-01-58-9109F Mar. ‘05 Page 1 of 14 Features l SONET OC-12 IR-1 (622.08Mbit/s, 15km) ,SONET OC-3 IR-1(155.52Mbit/s, 15km) ,SDH


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    PDF HTR6413 OC-12 TE-05-01-58-9109F 08Mbit/s, 52Mbit/s, 125Mbit/s EN60825-1

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATA SHEET SFP TRANSCEIVER for Gigabit Ethernet HTR6534 Series for Gigabit Ethernet up to 40km http://www.hitachi-cable.co.jp/ Ref. No.:TE04-02-58-9020D Mar. ‘05 Page 1 of 14 Features l For 40km transmission of Gigabit Ethernet (1.25Gbit/s) and Fibre Channel (1.0625Gbit/s).


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    PDF HTR6534 TE04-02-58-9020D 25Gbit/s) 0625Gbit/s) EN60825-1 1310nm

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATA SHEET SFP TRANSCEIVER For Fibre channel HTR8511 Series for 2G-Fibre channel up to 80km http://www.hitachi-cable.co.jp/ Ref. No.:TE04-01-58-9043H Mar. ‘05 Page 1 of 14 Features l For 80km transmission of Gigabit Ethernet (1.25Gbit/s) and Fibre Channel (1.0625Gbit/s).


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    PDF HTR8511 TE04-01-58-9043H 25Gbit/s) 0625Gbit/s) EN60825-1 1550nm

    Untitled

    Abstract: No abstract text available
    Text: HMC473MS8 / 473MS8E v01.1105 ATTENUATORS - SMT 5 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V


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    PDF HMC473MS8 473MS8E HMC473MS8E HMC173MS8 HMC473MS8

    panasonic variable capacitor

    Abstract: H473 hmc473ms8e Analog Voltage Variable Attenuator
    Text: HMC473MS8 / 473MS8E v01.1103 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V


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    PDF HMC473MS8 473MS8E HMC173MS8 HMC473MS8E HMC473MS8 330pF 10KpF panasonic variable capacitor H473 Analog Voltage Variable Attenuator

    10kpf capacitor

    Abstract: HMC473MS8E capacitor 10kpf H473 microwave panasonic 3 pins Variable resistor 10K ohm Variable resistor 10K ohm Voltage Controlled Attenuator AD822 D-35
    Text: HMC473MS8 / 473MS8E v01.1105 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz ATTENUATORS - SMT 5 Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V


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    PDF HMC473MS8 473MS8E HMC473MS8E HMC173MS8 HMC473MS8 10kpf capacitor capacitor 10kpf H473 microwave panasonic 3 pins Variable resistor 10K ohm Variable resistor 10K ohm Voltage Controlled Attenuator AD822 D-35

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
    Text: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


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    PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


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    PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r

    Variable resistor 10K ohm potentiometer

    Abstract: Variable resistor 50K ohm
    Text: o Increment/Decrement _ DUAL Dgital Potentiometer Prel i mi nary Technical Data AD5222 FEATURES 128 P osition, 2 C hannel P otentiom eter R eplacem ent 10K, 5 0 K, 100K, 1M Ohm V ery Low Power - 40 |iA Max ±2.7V Dual S upply O peration OR


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    PDF AD5222 AD5222 128-position, 0118l Variable resistor 10K ohm potentiometer Variable resistor 50K ohm

    lot date code panasonic

    Abstract: lot date code panasonic Resistor lm 825
    Text: WL M V HMC173MS8 MICROWAVE CORPORATION K aAs MMIC VOLTAGE VARIABLE ATTENUATOR 800- FEBRUARY 1998 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorp­ tive voltage variable attenuator in an 8- HIGH ATTENUATION RANGE:


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    PDF HMC173MS8 HMC173MS8 lot date code panasonic lot date code panasonic Resistor lm 825

    MARCON NH capacitor

    Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    OCR Scan
    PDF SD2922 SD2922 PCI2170 020876A MARCON NH capacitor UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead