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    VBE 10V, ICE 4A Search Results

    VBE 10V, ICE 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    VBE 10V, ICE 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN POWER TRANSISTOR 2SD1878

    Abstract: 2SD1878 EQUIVALENT 2SD1878
    Text: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1878 16KHz 100mA NPN POWER TRANSISTOR 2SD1878 2SD1878 EQUIVALENT 2SD1878

    2sd1911

    Abstract: No abstract text available
    Text: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1911 16KHz 2sd1911

    2SD2498

    Abstract: No abstract text available
    Text: Silicon Diffused Power Transistor 2SD2498 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM


    Original     		PDF 2SD2498 16KHz 2SD2498

    2SD870

    Abstract: 2sd870 transistor transistor 2sd870
    Text: SILICON DIFFUSED POWER TRANSISTOR 2SD870 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3 QUICK REFERENCE DATA


    Original     		PDF 2SD870 16KHz 100mA 2SD870 2sd870 transistor transistor 2sd870

    2sd1878

    Abstract: 2SD1878 EQUIVALENT NPN POWER TRANSISTOR 2SD1878 2SD1878 Transistor data transistor 2sd1878
    Text: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1878 16KHz 100mA 2sd1878 2SD1878 EQUIVALENT NPN POWER TRANSISTOR 2SD1878 2SD1878 Transistor data transistor 2sd1878

    100V 60A Diode

    Abstract: 2SD1886 vbe 10v, Ice 4A
    Text: 2SD1886 SILICON DIFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope ,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO


    Original     		PDF 2SD1886 16KHz 100mA 16KHz 100V 60A Diode 2SD1886 vbe 10v, Ice 4A

    TRANSISTOR 2SD1879

    Abstract: 2SD1879 2SD187
    Text: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1879 16KHz MA100mA TRANSISTOR 2SD1879 2SD1879 2SD187

    2SD1911

    Abstract: 40af
    Text: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1911 16KHz 2SD1911 40af

    TRANSISTOR 2SD1879

    Abstract: 2SD1879
    Text: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


    Original     		PDF 2SD1879 16KHz 100mA TRANSISTOR 2SD1879 2SD1879

    transistor 2sd2499

    Abstract: 2SD2499 08af 2SD2499 equivalent
    Text: 2SD2499 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3PM


    Original     		PDF 2SD2499 150urrent transistor 2sd2499 2SD2499 08af 2SD2499 equivalent

    Untitled

    Abstract: No abstract text available
    Text: DZT953 N EW PRODU CT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941

    DZT853

    Abstract: DZT953 DZT953-13 J-STD-020D
    Text: DZT953 NEW P PRO RO DUCT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes


    Original     		PDF DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941 DZT853 DZT953 DZT953-13 J-STD-020D

    4A SOT223 MARKING CODE

    Abstract: NPN 1A 100V SOT-223
    Text: NOT RECOMMENDED FOR NEW DESIGN USE ZXTP2013G DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF ZXTP2013G DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941 4A SOT223 MARKING CODE NPN 1A 100V SOT-223

    DZT853

    Abstract: DZT953 IPC-SM-782
    Text: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT853 DZT953) OT-223 J-STD-020C MIL-STD-202, DS30737 DZT853 DZT953 IPC-SM-782

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT853 DZT953) OT-223 J-STD-020C MIL-STD-202, DS30737

    4A SOT223 MARKING CODE

    Abstract: DZT953 NPN 1A 100V SOT-223
    Text: DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT953 DZT853) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30941 4A SOT223 MARKING CODE DZT953 NPN 1A 100V SOT-223

    DZT953

    Abstract: marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223
    Text: SPICE MODELS: DZT953 DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT953 DZT853) OT-223 J-STD-020C MIL-STD-202, DS30941 DZT953 marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223

    ZTX853

    Abstract: C 3298 TRANSISTOR
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX853 ZTX853 C 3298 TRANSISTOR

    C45H5

    Abstract: C44H11 C44H C44H8 C45H C45H11 C45H8
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Plastic Package Application General purpose power amplification & switching such as output or driver stages


    Original     		PDF C44H5 C45H5 C-120 45H1Rev210701 C45H5 C44H11 C44H C44H8 C45H C45H11 C45H8

    C44H11

    Abstract: C45H5 C45H8 C44H8 C44H C45H C45H11
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Application General purpose power amplification & switching such as output or driver


    Original     		PDF C44H5 C45H5 C-120 45H1Rev210701 C44H11 C45H5 C45H8 C44H8 C44H C45H C45H11

    FZT948

    Abstract: FZT949 DSA003718
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2- NOVEMBER m 1995 FEATURES * Extremely low equivalent * 6 Amps continuous current on-resistance; RCE{W) * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFEcharacteristics specified upto 20 Amps


    Original     		PDF OT223 FZT949 FZT948 Tamm25 FZT948 FZT949 DSA003718

    bu126

    Abstract: Switched Mode Power Supply
    Text: TOSHIBA {DISCRETE/OPTO} ~5h D E ^ I D ^ a S O 000flCH3 WÊÊÊÊÊÊÊÊÊÊÊtÊÊÊÊIÊÊÊÊÊ 9097250 TOSHIBA bbC 08093 CDISCRETE/OPTO 0 ^ 2 3 -// BU126 SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE NPN SILICON POWER TRANSISTOR' INTENDED Unit in mm


    OCR Scan     		PDF 000flCH3 BU126 250MAX, bu126 Switched Mode Power Supply

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 1.i. Cl f i cf r r c2c q Cl in Bi Ei nu b 2 UT1 Ë2 PARTMARKING DETAIL - T1048 ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L C o lle cto r-B a se V o ltag e VcBO VALUE UNIT


    OCR Scan     		PDF ZDT1048 T1048 100mA

    260TC

    Abstract: KSE3055T
    Text: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage


    OCR Scan     		PDF KSE3055T O-220 200mA, 500mA, 500KHz DQ25554 260TC KSE3055T