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    VBE 10V, VCE 5V NPN TRANSISTOR Search Results

    VBE 10V, VCE 5V NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    VBE 10V, VCE 5V NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40841

    Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 40841 MOSFET 3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    T6705

    Abstract: NPN/PNP transistor sot223 zdt705 complementary npn-pnp power transistors ZDT605 ZDT6705 DSA0037253 DSA003725 transistor ic1A
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6705 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZDT6705 OT223) T6705 -10mA* -100mA, 20MHz -10mA, ZDT705 T6705 NPN/PNP transistor sot223 complementary npn-pnp power transistors ZDT605 ZDT6705 DSA0037253 DSA003725 transistor ic1A

    pnp and npn

    Abstract: BC847PN
    Text: BC847PN Complementary Transistor PNP and NPN SOT-363 Features — Epitaxial Die Construction — Two internal isolated NPN/PNP Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF BC847PN OT-363 -10mA -100mA 100MHz pnp and npn BC847PN

    NTE128

    Abstract: NTE128 equivalent NTE129 NTE129MCP Transistor NTE128 NTE-129
    Text: NTE128 NPN & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current


    Original     		PDF NTE128 NTE129 NTE128 NTE128 equivalent NTE129 NTE129MCP Transistor NTE128 NTE-129

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    CA3096

    Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
    Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96

    CA3096

    Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096AM CA3096AM96

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E

    BC847PN

    Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
    Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C


    Original     		PDF BC847PN OT-363 -10mA, 100MHz 200Hz 20-Oct-2009 BC847PN pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister

    K13 transistor

    Abstract: NPN Transistor Pair
    Text: MMDT4413 Complementary NPN/PNP Transistor SOT-363 Features — Complementary Pair — One 4401-Type NPN, One 4403-Type PNP — Epitaxial Planar Die Construction — Ideal for Low Power Amplification and Switching MAKING: K13 Dimensions in inches and millimeters


    Original     		PDF MMDT4413 OT-363 4401-Type 4403-Type volt-100A, -10mA -150mA -500mA -15mA -50mA K13 transistor NPN Transistor Pair

    t6790

    Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726
    Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50


    Original     		PDF ZDT6790 OT223) T6790 500mA, FZT690 -10mA, -500mA, -50mA, 50MHz t6790 ZDT6790 zetex t6790 100MA 45 V NPN ic1a DSA003726

    BCW60C

    Abstract: BCW60B BCW60 BCW60A BCW60D BCW61
    Text: BCW60 SERIES Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 Pin Configuration .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125) max. .004 (0.1) 2 .037(0.95) .037(0.95)


    Original     		PDF BCW60 O-236AB OT-23) BCW61 200Hz BCW60A BCW60B BCW60C BCW60D BCW60C BCW60B BCW60A BCW60D

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP Collector-Base Voltage VCBO 80 -80 V


    Original     		PDF ZDT6702 OT223) T6702

    Untitled

    Abstract: No abstract text available
    Text: BC847BVN Dual NPN+PNP Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors SOT-563 RoHS Compliant Product FEATURES .002 0.05 .000(0.00) .051(1.30) .043(1.10) .012(0.30) .004(0.10) * Epitaxial Die Construction * Ultra-Small Surface Mount Package


    Original     		PDF BC847BVN OT-563 -100mA -10mA 100MHz -10mA 04-Apr-2007

    T6702

    Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80


    Original     		PDF ZDT6702 OT223) T6702 T6702 complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P


    Original     		PDF OT-363 BC847PN OT-363 BC847W BC857W) -10mA -100mA -10mA

    IE1A

    Abstract: BC847PN "two TRANSISTORs" sot-363 pnp npn
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR PNP and NPN FEATURES z Epitaxial Die Construction z Two internal isolated NPN/PNP Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847PN OT-363 -100mA -10mA -10mA 200Hz IE1A BC847PN "two TRANSISTORs" sot-363 pnp npn

    MMDT4413

    Abstract: No abstract text available
    Text: MMDT4413 NPN - PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z SOT-363 Complementary Pair Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT4413 OT-363 026TYP 65TYP) 021REF 01-June-2005 MMDT4413

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    MMDT5451

    Abstract: equivalent of 5401 transistor transistor 5551 PNP5401 5401 transistor npn-pnp dual BR 5551
    Text: MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor Dual Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching


    Original     		PDF MMDT5451 OT-363 SY-50mA, -10mA, 100MHz 28-Oct-2009 MMDT5451 equivalent of 5401 transistor transistor 5551 PNP5401 5401 transistor npn-pnp dual BR 5551

    Untitled

    Abstract: No abstract text available
    Text: COMPLEMENTARY SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR ZTX653/ZTX753DCSM • Complimentary Silicon Planar NPN/PNP Transistors • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF ZTX653/ZTX753DCSM ZTX653 ZTX753 -120V -100V MO-041BB)

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE