Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5086 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collsctor-Emltter Voltage: Vao =50V • Collector Dissipation: Pe (max)=625mW
|
Original
|
PDF
|
2N5086
625mW
lc-100
300f/s,
|
MPSA63
Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Text: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62
|
OCR Scan
|
PDF
|
MPSA62,
MPSA63
MPSA64
MPSA62
BVCES-30V
C-100
MPSA63.
MPSA64
MPSA63 equivalent
100C100B
mps-a63
C10AA
MPSA62
|
2SC1553
Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
Text: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s
|
OCR Scan
|
PDF
|
500MHi
2SC1553A
2SG1553
500MHi)
15GHi
2SC1553
2S01553.
2S01553AÂ
2sc1553,
2sc15
scjti
SC1553
nf1sd
S211
|
2SA1015
Abstract: 2SA10150 2SA1015 0
Text: 4 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS ''" M i t t - ZSClölO AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES : • High Voltage and High Current. VCEO=50V (Min.), Ic=150mA (Max.)
|
OCR Scan
|
PDF
|
150mA
2SA1015
Ta-25
2SC1815
2SA1015
2SA10150
2SA1015 0
|
Untitled
Abstract: No abstract text available
Text: TPC6701 TOSHIBA TPC6701 TOSHIBA Taransistor Silicon N P N Epitaxial Type Unit: mm O High-Speed Switching Applications Olnverter ^0 3:0.1 Lighting Applications I n c lu d in g 2 u n i t s in a sm all s u r f a c e mounted package High DC c u r r e n t g a i n : h F E ~ 4 0 0 ~ 1 0 0 0 lc=0. 1A
|
OCR Scan
|
PDF
|
TPC6701
|
MM4048
Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MM4048
BC406
L17D
D29A10
D29A12
D29A7
D29A8
D29A9
MA7809
SA2255
|
TA-2946
Abstract: transistor TE 2162
Text: Ordering number : ENN6793 | NPN Epitaxial Planar Silicon Transistor CPH5504 High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions u n it: mm 2162 Features • Composite type with 2 NPN transistors in one
|
OCR Scan
|
PDF
|
ENN6793
CPH5504
CPH3205.
TA-2946
transistor TE 2162
|
Untitled
Abstract: No abstract text available
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
2N5400
2N5550
2N5551
O-92A
2N5400,
2N5401
2N5550,
|
Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps
|
OCR Scan
|
PDF
|
OT223
FZT855
FZT955
500mA*
-100mA,
50MHz
1-100mA
100mA,
|
PN3563
Abstract: PN5130 BOX69477 PN5132
Text: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage
|
OCR Scan
|
PDF
|
PN5132
O-92A
PN3563
PN5130
PN3563
PN5130
PN513
250mW
BOX69477
|
2N5550 EBC
Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
2n5400,
2n5401
2n5550,
2n5551
T0-92A
2n5400
2n555q
2n5551
600mA
2N5550 EBC
2N5401
2N5400
5551
2N5550
T092A
N5400
|
transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
|
OCR Scan
|
PDF
|
|
bc727
Abstract: bc728
Text: THE BC727, BC728 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR IJNIYERSAL APPLICATIONS. THE BC727,BC728 ARE COMCOMPLEMENTARY TO THE NPN TYPE BC737, BC738 RESPECTIVELY. CASE TO-92A "EBC ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
BC727,
BC728
BC737,
BC738
O-92A
BC727
625mW
|
185AJJ006
Abstract: solitron devices SOLITRON Solitron Transistor
Text: SOLITRON DEVICES 561 863 5946 11/21/02 18:18 0 :02/08 N0:092 SOLITRON DEVICES, INC. PRODUCT SPECIFICATION SOLITRON P/N: 183AJJ006 SDT7AQ6 CUSTOMER P/N: REV. ORIGINATOR : GENERAL PURPOSE REFERENCE SPEC: REV: PKG; PARTS DWG: EDS NO: DESIGN LIMITS: REFERENCE DEVICE:
|
OCR Scan
|
PDF
|
183AJJ006
185AJJ*
185AJJ006
SDT7A06)
I8SAJJ006
185AJJ006
solitron devices
SOLITRON
Solitron Transistor
|
|
|
Untitled
Abstract: No abstract text available
Text: CRO MPS3569 NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed fo r AF medium power am plifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80V Collector-Emitter Voltage VcEO 40V Emitter-Base Voltage
|
OCR Scan
|
PDF
|
MPS3569
O-92A
MPS3569
625mW
100uA
30raA
150mA
Oct-96
VCB-10V
|
Untitled
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C
|
OCR Scan
|
PDF
|
ZSB14Z9
2SD2155
Ta-25
VCB--180V,
-50mA,
VCB--10V,
2SB1429
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI S CR ET E/ OPT O} 3T Dlf| TCHVESD □□□□431 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E / O P T O 39C 0 0 4 3 1 r - o 3 / uhf# ««««« o r a O UHF Band Low N o i s e A m p l i f i e r A p p l i c a t i o n s O High Speed S w i t c h i n g A p p l i c a t ions
|
OCR Scan
|
PDF
|
500MHz
500MHi
2SC1553A
2SC1553
2SC1553
|
MP5001
Abstract: No abstract text available
Text: SILICON NPN/PNP EPITAXIAL TYPE POWER TRANSISTOR 5 IN 1 MP5001 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation. : P t =10W • High Collector Current
|
OCR Scan
|
PDF
|
MP5001
VCB--10V,
vCCii-30V
-50A/us
MP5001
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR SS9015 LOW FREQUENCY, LOW NOISE AMPLIFIER TO -92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
|
OCR Scan
|
PDF
|
SS9015
SS9014
|
MA7809
Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MA7809
2S711
SA2713
L17D
STL51
BC412
KIS434
NS435
NS436
NS437
|
QM30DY-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type
|
OCR Scan
|
PDF
|
QM30DY-2H
E80276
E80271
QM30DY-2H
|
Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage
|
OCR Scan
|
PDF
|
OT223
FZT948
FZT949
100SJ
TJ70S7fl
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *
|
OCR Scan
|
PDF
|
ZTX1055A
NY11725
3510Metroplaza,
|
ztx658
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible
|
OCR Scan
|
PDF
|
ZTX658
atTamp25
ZTX688B
lf-50mA,
50MHz
ztx658
|
