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    SEI Stackpole Electronics Inc HVCB2010FKC1M00

    RES 1M OHM 1% 1W 2010
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    DigiKey HVCB2010FKC1M00 Digi-Reel 4,735 1
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    SEI Stackpole Electronics Inc HVCB2010FDD10M0

    RES 10M OHM 1% 1W 2010
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    DigiKey HVCB2010FDD10M0 Cut Tape 3,366 1
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    SEI Stackpole Electronics Inc HVCB2010BDE50M0

    RES 50M OHM 0.1% 1W 2010
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    DigiKey HVCB2010BDE50M0 Digi-Reel 990 1
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    SEI Stackpole Electronics Inc HVCB2010FDC100M

    RES 100M OHM 1% 1W 2010
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    DigiKey HVCB2010FDC100M Digi-Reel 535 1
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    HVCB2010FDC100M Cut Tape 535 1
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    NAC HVCB2010FDC100M 500 1
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    SEI Stackpole Electronics Inc HVCB2010FDL500K

    RES 500K OHM 1% 1W 2010
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    DigiKey HVCB2010FDL500K Digi-Reel 420 1
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    Mouser Electronics HVCB2010FDL500K 393
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    VCB20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BV 17234

    Abstract: circuit inter CV 203 BV 17245 HAND DRYER CIRCUIT DIAGRAM CAC406 VCA21 neumatica COSMO MARKING steam turbine gas solenoid valve
    Text: Direct Operated 2 Port Solenoid Valve For Air Series VCA Improved durability Nearly twice the life of the previous series VC„ Resistance of moving parts has been reduced. Service life and wear resistance are improved. VDW Large flow rate: TV factor 0.33 to 2.11


    Original
    D-107 Jeddah-21471, BV 17234 circuit inter CV 203 BV 17245 HAND DRYER CIRCUIT DIAGRAM CAC406 VCA21 neumatica COSMO MARKING steam turbine gas solenoid valve PDF

    CAC406

    Abstract: M58103 m58101
    Text: Series VC Direct Operated 2 Port Solenoid Valve for Heated Water Series VCB VX VN„ VQ VDW VC LV PA 4.5-31 Multipurpose Valve for Heated Water Direct Operated 2 Port Solenoid Valve for Heated Water Series VCB Improved durability Nearly twice the life of the previous series


    Original
    VCB20 OR-1860-120- VCB30 OR-2380-130- VCB40 OR-2600-180- CAC406 M58103 m58101 PDF

    BF926

    Abstract: No abstract text available
    Text: Dnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA BF926 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f, and


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    BF926 -VcB-20V BF926 PDF

    bc322

    Abstract: No abstract text available
    Text: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,


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    BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC167, BC307, BC237, bc322 PDF

    le2m

    Abstract: No abstract text available
    Text: 'j.Eis.e.u <z~>£mi-L,onauctoi L/^ioaucti, Line. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF496 SILICON PLANAR TRANSISTOR NPN transistor in a plastic TO-92 envelope Intended for VHP applications, e.g. as gain controlled preamplifier in VHP television and FM tuners.


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    BF496 le2m PDF

    2N4058

    Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
    Text: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


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    2N5707 2N37H 2N4058 2N4062 O-92B 2N3707 2N3711 2N4062 200mA 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4061 2N3709 2N370 PDF

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


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    ZTX1047A NY11725 JS70S7Ã TF-450 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps


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    OT223 FZT855 FZT955 500mA* -100mA, 50MHz 1-100mA 100mA, PDF

    2n4058

    Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
    Text: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


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    2N3707 2N37H 2N4058 2N4062 2N3707 2N37H 2N4058 200mA 100mA 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    Toshiba 2SC3281

    Abstract: 2sc3281 toshiba 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA transistor 2SC3281 instrumentation amplifier ic with 1A current 2SC3281 transistor 100-C 2-21F1A
    Text: TO SH IBA TRANSISTOR SEMICONDUCTOR TO SHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 Unit in mm PO W ER AM PLIFIER APPLICATIONS. 20.5M AX. • • 3-3 1 0.2 Complementary to 2SA1302 Recommend for 100W High Fidelity Audio Frequency Amplifier


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    2SC3281 2SA1302 2SC3281 Toshiba 2SC3281 2sc3281 toshiba 2sc3281 transistor toshiba 2SA1302 TOSHIBA transistor 2SC3281 instrumentation amplifier ic with 1A current 2SC3281 transistor 100-C 2-21F1A PDF

    2SC2688

    Abstract: transistor nec 2sc2688
    Text: -> y a > s< *7 — V = 7 > '> 7 .9 Silicon P o w e r T ran sistor N P N = $ £ if r J l2 '> • h= 7— f w u h ' ^ p y t ü j * , h t * m J i m it ffëlÜ] Vd = l 000 V T Y P . .* m m C = 2 300 pF, E - B P ^ ^ M 7 X ) c re^ 3 .0 pF(V cb = 3 0 V) fT^ 5 0


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    PDF

    T092A

    Abstract: T0-92A 2N5451 2N3402 AP 3706 P MPS3704 equivalent 2N5702 2N3404 MPS3704 2N3417 equivalent
    Text: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2NJ702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN


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    2N3702 O-92B. MPSJ702 T0-92A. O-92B T0-92A 2N/MPS3702 2N/MPS3703 2N/MPS3704 2N/MPS3705 T092A T0-92A 2N5451 2N3402 AP 3706 P MPS3704 equivalent 2N5702 2N3404 MPS3704 2N3417 equivalent PDF

    BC238 h parameter

    Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
    Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


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    BC107 BC167 BC237 BC317 BC107, BC177, BC167, BC257, BC237, BC307, BC238 h parameter bc313 BC231 bc101 BC168 BC320 30Hz-15kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: BF 297 •BF 298 • BF 299 W W J F / r f NPN HIGH VOLTAGE VIDEO AMPLIFIERS is^ if THE BF297, BF298, BF299 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CHARACTERISTICS. CASE TO-92F


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    BF297, BF298, BF299 O-92F BF297 BF298 BF299 100mA 625mW 1-100mAVCEâ PDF

    1FR510

    Abstract: S9018 transistor S9018
    Text: S9018 N P N G eneral P u rp o se Transistors SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Unit Vdc Vdc Vdc mAdc Characteristics Total Device Dissipation FR-5 Board 1 T A -2 5 t


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    TA-25 S9018 10mAdc. d00MH? 1FR510 transistor S9018 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS J Q Q J HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS (Ta«25°C) CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector Cut-off Current


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    VCB-200V, VCE-10V, Ic-150mA Ic-200mA, -20mA VCB-10V, 2SC3963 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMQ2 Transistors Digital Transistor Dual Digital Transistors for Power Management FMQ2 #FMtUrM # Absolute maximum ratings (Ta * 2 5t:) 1) Two 500 mA class transistors are housed in an SMT package. 2 ) Up to 500 mA can be driven. 3 ) Low VcE(sat) of drive tra n s is to rs for low power dissipation.


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    0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 3 - FEBRU ARY 1995_ FEA TU RES * Low saturation voltage COM PLEM ENTARY TYPE - FZT757 PARTM ARKING DETAIL - FZT657 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


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    OT223 FZT757 FZT657 20MHz VCB-20V PDF

    A45A

    Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
    Text: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8


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    cen-a44 cen-a45 cen-a45a to-92 CEN-A44, EN-A45 CEN-A45A MPS-A44, MPS-A45 100mA A45A MPS-A44 TRANSISTOR A44 TRANSISTOR a45 MPSA44 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A ISSUE 2 - JANUARY 1995_ _ _ Full characterised data now available ABSOLUTE MAXIMUM RATINGS. ZTX1047A UNIT V CBO 35 V C o lle c to r-E m itte r V o lta g e


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    ZTX1047A ZTX1047A VCB-20V Ic-20A, lc-50mA, 50MHz width-300 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS


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    BF491j2 BF492, BF493 BF491 BF492 BF493 500mA 625mW 12mW/Â PDF

    2sC3281

    Abstract: Toshiba 2SC3281 100W AUDIO ic AMPLIFIER power amplifier 2sc3281 TRANSISTOR transistor 2SC3281
    Text: i TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Complementary to 2SA1302 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    2SC3281 2SA1302 Ta-25 VCB-200V, 2sC3281 Toshiba 2SC3281 100W AUDIO ic AMPLIFIER power amplifier 2sc3281 TRANSISTOR transistor 2SC3281 PDF