Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG75Q202H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, Realtime-Current-Control (RTC , Under-Voltage & Over-Temperature) in One
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MIG75Q202H
2-110A1A
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IRGKI0025M12
Abstract: mosfet 1200V 25A
Text: International Rectifier Preliminary Data Sheet No. PD-9.933 ir g k io o 25 m i 2 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT VCE= 1200V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"
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IRGKI0025M12
IRGKI0025M12
mosfet 1200V 25A
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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characteristics of zener diode
Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Text: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1DI300ZP-120
26-35kg
E82988
095t/R89
characteristics of zener diode
zener diode b355
M114
1DI300Zp120
TRANSISTOR BO 352
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f2601
Abstract: No abstract text available
Text: This material and lhe information herein is he properly of F uji Electric Co.Ltd.They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for (he use of ;iny third portynor usod (or the manufoc turing purposes wiihout the express written consent of F uji Electric Co. Li d
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MS5F2601
50A/u
f2601
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG75Q201H MIG75Q201H TO SH IBA INTELLIGENT GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for
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MIG75Q201H
21/iS
2-136A1A
M1G75Q201H
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A2118
Abstract: SC-65
Text: 2SK1081 -01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • L :>w on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs— ±30V Guarantee
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SC-65
A2118
SC-65
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a2hb transistor
Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
Text: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V
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1000H
QM1000HA-2HB
E8Q276
E80271
a2hb transistor
1000A diode
Transistor AC 188
A2HB
20/a2hb transistor
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QM30DY-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type
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QM30DY-2H
E80276
E80271
QM30DY-2H
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DD-221
Abstract: dioda module
Text: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,
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IRGNI0075M12
0D22152
10OnH
DD-221
dioda module
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"
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IRGKI0100M12
IGST21
002E132
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VPO300
Abstract: No abstract text available
Text: TOSHIBA MIG150Q101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG150Q101H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.
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MIG150Q101H
2-121A1A
961001EAA1
VPO300
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG75Q2YS51
10/us
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MIG200Q101H
Abstract: TLP559 295I
Text: TOSHIBA MIG200Q101H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M I G 2 0 0 Q 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.
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MIG200Q101H
2-121A1A
961001EAA1
40-ai
MIG200Q101H
TLP559
295I
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Untitled
Abstract: No abstract text available
Text: f MITSUBISHI TRANSISTOR MODULES j QM400HA-24 ! HIGH POWER SWITCHING USE [ _INSULATED TYPE f QM400HA-24 Collector current. 400A Collector-emitter voltage.1200V • hFE DC current gain.75
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QM400HA-24
E80276
E80271
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QM30DY-H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • 1C • V cex • hFE Collector current. 30A Collector-emitter voltage. 600V DC current gain.75
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QM30DY-H
E80276
E80271
QM30DY-H
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C2111
Abstract: 300V1
Text: 1 h.» 31 C í i n I « m i i?1* I r il O 'r ii J' C'n h l r g V i 11 ihf p 'O P t r ly t t |).n C>:;>rii>> Co A i d t i.r ing pur p ô l e * c p n | » n [ ul Fuji Ç l f C i r l c ut Kl 1er II'« i r i i nu 1j £ w i l l l«n I I'l' il P i M y / i O ' WM.'i ij yl
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ONT-i70-o|
MS5F3937
H04-004-Ã
H04-004-06
15-OA.
Tj-25
C2111
300V1
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fuji igbt module
Abstract: No abstract text available
Text: 6-Pack IGBT 1200 V 50 A FUJI IGBT MODULE F series Outline Drawings • Features • Low Saturation Voltage • V o lta g e D rive • V a rie ty o f P ow er C apacity Series ■ A pplications • In ve rte r fo r M o to r D rive • AC and DC Servo Drive Am plifier
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2C25A
Abstract: No abstract text available
Text: Fuji New Semiconductor Products ~ ; u I ¡Nf ^ 1MBC03-120, 1MB03D-120 K J f ^ l G B T Features • If t H * • 7 7 h X < y ? > < 7 lZ j:Z l& X 1 ' y ? > 7 - y — 'y t 1 & S 'r X { t • M ilti, • 8 8 4 7 l i i l i l 7 7 RBSOA, SCSOA 4' E ^ • Small molded package
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1MBC03-120,
1MB03D-120
vl2gTi30
5388-76B0
ffl30
2C25A
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MG100Q2YS51A
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage
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MG100Q2YS51A
00Q2YS51
tw-10/zs
MG100Q2YS51A
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1DI300ZN-120
Abstract: T04 transistor B351 transistor
Text: 1DI300ZN-120 300A ' < T7 ' - Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • hFE*''«v,' High DC Current Gain • e t e c & f f i t t 'f t : A p p lic a tio n s • //Lffl'f —9 General Purpose Inverter • Uninterruptible Power Supply • N C lf N f t M Servo & Spindle Drive for NC Machine Tools
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1DI300ZN-120Ã
E82988
I95t/R89)
Shl50
1DI300ZN-120
T04 transistor
B351 transistor
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T1EB
Abstract: 125CV 2DI75Z-100 30S3 T930 2di75z100 OA9 diode
Text: 2DI75Z-100 75a ' U ± y < r7 - ^ 3 . - ) V : Outline Drawings POW ER TRAN SISTO R MODULE F e a tu re s • ffiifiS High Voltage • 7 V— V — K rtj • A S O A '& i' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications
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2DI75Z-100
095t/R89
T1EB
125CV
30S3
T930
2di75z100
OA9 diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75
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QM100DY-24K
E80276
E80271
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QM10
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75
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QM100HY-2H
E80276
E80271
Tj-25
QM10
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