PN 2n2222A
Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2N2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907,
2N2907A,
PN2907Â
PN 2n2222A
3n2222
2K2222
3N2222A
2N2222-PN2222
ST 2n2222
2K222
pn 2N22
VBB-23
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MPSA05
Abstract: MPS-A05 mpsa06 1C10
Text: ¡ TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS M P Q ñ ílR MPSAÜ5, 06 Unit in mm DESIGNED FOR USE AS MEDIUM-POVER DRIVER AND r LOV-POVER OUTPUTS. 5 i l MAX. . • FEATURES : •High Collector-Eiitter Breakdown Voltage
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VCBO-60Vdc
MPSA05
-80Vdc
MPSA06
25Vdc
C-100
MPSA55.
Ta-25
PSA05,
MPS-A05
mpsa06
1C10
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T1P42C
Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Text: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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TIP42
TIP42/42A/42B/42C)
T1P41/41AV41B/41C
T1P42
TIP42A
T1P42B
TIP42C
T1P42A
TIP42B
T1P42C
Power transistor TO-220 NPN 100 V, TIP 41C
TIP 41c transistor
T1P42A
TIP 42c transistor
T1P-42C
T1P49
t1p41
tlp42c
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Untitled
Abstract: No abstract text available
Text: 2N3107 z * ’“ - th ro u g h 2N3110 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ¥ X ''«SS« »W v. I CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS
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2N3107
2N3110
2N3107
2N3110
2N4032,
2N4030.
2N3109
800mW
150mA
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FN2222A
Abstract: RT2222
Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2N2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907,
2N2907A,
PN2907,
FN2222A
RT2222
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mpsa05
Abstract: 1C10
Text: 45E » • TDTVESD 0017flb4 Ô TOS4 TOSHIBA TRANSISTOR - M P S A O 5, 06 SILICON NPN EPITAXIAL T Y P E PCT PROCESS T TOSHIBA (DISCRETE/OPTO) DESIGNED FOR USE AS MEDIUM-POVER DRIVER AND LOK-POKER OUTPUTS. FEATURES : •High Collector-Eaitter Breakdown Voltage
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0017flb4
MPSA05
-80Vdc
MPSA06
25Vdc
C-100
MPSA55.
Ta-25
MPSA06
1C10
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2N2222
Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.
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2N2222
PN2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
2N2907,
2N2907A,
FN2222
2n2222 micro electronics
pn2222 2n2222
FN2222A
PN2222A le
tr 2n2222
PN2907
T092
2N2222-PN2222
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2N2222
Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2N2222
PN2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
2N2907,
2N2907A,
2N2222 pnp
2N2222-PN2222
FN2222A
2n2222 micro electronics
PN2222A le
2N2222 power
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