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    VCEO 100V IC 0.5A Search Results

    VCEO 100V IC 0.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    VCEO 100V IC 0.5A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIP127 Application Note

    Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A


    Original     		-100V TIP122 -20mA -100V, TIP127 TIP127 Application Note TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington PDF

    2SA1644

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)


    Original     		2SA1644 -100V -100V; 2SA1644 PDF

    2SA1645

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A)


    Original     		2SA1645 -100V 2SA1645 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A PDF

    2N5738

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation


    Original     		2N5738 -100V -100V; 2N5738 PDF

    2N5740

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5740 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation


    Original     		2N5740 -100V -100V; 2N5740 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		TIP122 PDF

    2N5611

    Abstract: 2N5612 100v audio amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION •DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Complement to Type 2N5612


    Original     		2N5611 -100V 2N5612 -50mA -100V; -120V; 2N5611 2N5612 100v audio amplifier PDF

    BDT60AF

    Abstract: BDT60BF BDT60CF BDT60F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF


    Original     		BDT60F; BDT60AF -100V BDT60BF; -120V BDT60CF BDT61F/61AF/61BF/61CF BDT60F BDT60BF BDT60AF BDT60BF BDT60CF BDT60F PDF

    NPN Transistor VCEO 80V 100V

    Abstract: BDT41AF BDT41BF BDT41CF BDT41F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF


    Original     		BDT41F/AF/BF/CF BDT41F; BDT41AF BDT41BF; BDT41CF BDT42F/AF/BF/CF BDT41F NPN Transistor VCEO 80V 100V BDT41AF BDT41BF BDT41CF BDT41F PDF

    tip42c

    Abstract: TIP42 datasheet tip42 tip41 Inchange semiconductor TIP42B data sheet tip41 file type TIP42 transistor download datasheet TIP42/42A/42B/42C transistor TIP42 TIP42A
    Text: INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- TIP42A -80V(Min)- TIP42B; -100V(Min)- TIP42C


    Original     		TIP42/42A/42B/42C TIP42; TIP42A TIP42B; -100V TIP42C TIP41/41A/41B/41C TIP42 tip42c TIP42 datasheet tip42 tip41 Inchange semiconductor TIP42B data sheet tip41 file type TIP42 transistor download datasheet TIP42/42A/42B/42C transistor TIP42 TIP42A PDF

    BDT88F

    Abstract: BDT82F BDT84F BDT86F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F


    Original     		BDT82F/84F/86F/88F BDT82F; BDT84F; -100V BDT86F; -120V BDT88F BDT81F/83F/85F/87F BDT82F BDT88F BDT82F BDT84F BDT86F PDF

    BDT87F

    Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F


    Original     		BDT81F/83F/85F/87F BDT81F; BDT83F; BDT85F; BDT87F BDT82F/84F/86F/88F BDT81F BDT83F BDT87F NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536 PDF

    transistor 31C

    Abstract: BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C


    Original     		BDT31/A/B/C BDT31; BDT31A BDT31B; BDT31C BDT32/A/B/C BDT31 BDT31/A BDT31B/C transistor 31C BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32 PDF

    BDT85

    Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87


    Original     		BDT81/83/85/87 BDT81; BDT83; BDT85; BDT87 BDT82/84/86/88 BDT81 BDT83 BDT85 BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83 PDF

    2SA1646

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Fast Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@IC= -6A APPLICATIONS ·This type of power transistor is developed for high-speed


    Original     		2SA1646 -100V Volta100V 2SA1646 PDF

    NPN Transistor VCEO 80V 100V

    Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF


    Original     		BDT31F/AF/BF/CF/DF BDT31F; BDT31AF BDT31BF; BDT31CF BDT31DF BDT32F/AF/BF/CF/DF BDT31F BDT31BF NPN Transistor VCEO 80V 100V BDT31F BDT31AF BDT31BF BDT31CF BDT31DF PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		TIP122 PDF

    TRANSISTOR tip122

    Abstract: TIP122 tip122 data TRANSISTOR tip122 features
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		TIP122 TRANSISTOR tip122 TIP122 tip122 data TRANSISTOR tip122 features PDF

    2sc4024

    Abstract: VEBO-15V M.P transistor FM20
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA


    Original     		2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 2sc4024 VEBO-15V M.P transistor FM20 PDF

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


    Original     		BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326 PDF

    2N6718

    Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
    Text: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter


    Original     		2N6716 2N6717 2N6718 2N6716 2N6717 250mA, 2N6718 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718 PDF

    semelab 2N6287

    Abstract: 2N6300J 2n6278 to63
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original     		2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63 PDF

    2N5682

    Abstract: 2n5680
    Text: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )


    Original     		2N5681 2N5682 2N5682 2N5679 2N5680 2N5681SMD" 2N5681SMD 2N5681SMD05 2N5681SMD05-JQR-B PDF

    TIP122

    Abstract: transistor tip 122 equivalent transistor tip122
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCe=3V, IC=3A. • High Collector Breakdown Voltage : VcEO=100V(Min.)


    OCR Scan     		220AB TIP122 transistor tip 122 equivalent transistor tip122 PDF