SMD BR
Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25
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2SA1368
-100V
-800mA)
500mW
2SC3438
-10mA
-150mA
-15mA
SMD BR
2sc3438
2sc343
2SA1368
smd b_r
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage
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2SA1368
-100V
-800mA)
500mW
2SC3438
-10mA
-150mA
-15mA
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2SA1945
Abstract: marking z*d
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
2SA1945
marking z*d
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PDF
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Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
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PDF
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power ic 5v 1A
Abstract: No abstract text available
Text: MMBT591A PNP Epitaxial Planar Silicon Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Peak Pulse Current -ICM 2
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MMBT591A
OT-23
100MHz
power ic 5v 1A
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PDF
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iC5A
Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150
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BU406/406H/408
O-220
BU406
BU406H
BU408
iC5A
BU406
BU408
transistor BU406
250V transistor npn 2a
BU406H
npn switching transistor Ic 5A
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5321 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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2N5321
175OC/W
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5321 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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2N5321
175OC/W
500mA
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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2N5321
175OC/W
25OCand
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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Original
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2N5321
175OC/W
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2N5321 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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2N5321
175OC/W
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PDF
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FTZ605
Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Text: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE
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D-81541
DDTA114TCA
DDTA114TKA
DDA114TH
DDA114TU
DDA114TK
DDTA124TE
DDTA124TUA
DDTA124TCA
DDTA124TKA
FTZ605
ZDT6790
fzt653
ZDT1049
ZTX415
ZTX796A
fzt651
ZXGD3003E6
2DD1766
zetex transistor to92
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PDF
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BU109
Abstract: 2150B 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU109 DESCRIPTION •Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage: VCE sat = 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min)
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BU109
100mA
BU109
2150B
200v 5a transistor
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PDF
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FMMT551
Abstract: FMMT451 DSA003698
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain % - (Volts) -0.8 -0.6 -0.4 -0.2 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE PARTMARKING DETAIL
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FMMT551
FMMT451
-150mA,
-50mA,
100MHz
FMMT551
FMMT451
DSA003698
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PDF
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ZTX550
Abstract: ZTX551 ztx550 equivalent DSA003768
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2
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ZTX550
ZTX551
ZTX550
ZTX551
ztx550 equivalent
DSA003768
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PDF
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ZTX552
Abstract: ZTX553 ZTX553 equivalent DSA003769
Text: ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE sat - (Volts)
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ZTX552
ZTX553
IC/10
-150mA,
-50mA,
100MHz
ZTX552
ZTX553
ZTX553 equivalent
DSA003769
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PDF
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*e13007
Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
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MJE13007
MJE13007
O-220
QW-R203-019
*e13007
bipolar transistor td tr ts tf
equivalent of transistor mje13007
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PDF
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FMMT455
Abstract: B455 DSA003695
Text: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10
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FMMT455
IC/10
100ms
150mA,
100MHz
FMMT455
B455
DSA003695
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
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MJE13007
MJE13007
O-220F
MJE13007L
QW-R219-004
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PDF
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10 amp npn darlington power transistors
Abstract: FMMT38C FMMT38B 100 amp npn darlington power transistors FMMT38A DSA003692
Text: FMMT38A FMMT38B FMMT38C ISSUE 3 AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C h V - Volts 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55°C
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FMMT38A
FMMT38B
FMMT38C
100mA,
10 amp npn darlington power transistors
FMMT38C
FMMT38B
100 amp npn darlington power transistors
FMMT38A
DSA003692
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PDF
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BCX33
Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Text: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT
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OCR Scan
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BC337
BC338
BCX31
OT-25
BCX32
BCX33
BCX34
BFX84
BFX85
h--22->
BCX33
BCX32
BCX34
BFQ36
2N1711 Data Sheet
BC338
BFX85
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PDF
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2SC1048
Abstract: No abstract text available
Text: High Voltage Transistors TYPE NO. CASE POLA RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+
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OCR Scan
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O-92A
O-92B
O-92B
2SC1048
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PDF
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tube az2
Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)
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OCR Scan
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BSS38
BSW41A
T0-18
BSX19
BSX20
BSX21
BSY95A
h--22->
crt6-25
tube az2
2n2389
2n2906 sis
BSS68
BSW41
2N2369
2N2906 to92
BFX34
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PDF
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Untitled
Abstract: No abstract text available
Text: CMMT491 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMMT= 491 3.0 2.8 0.14 0.48 0.38 2.6 2.4 I Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.60 0.40 J1.02 ’ I 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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CMMT491
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PDF
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