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    VCEO 80V IC 0.5A Search Results

    VCEO 80V IC 0.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    VCEO 80V IC 0.5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 R1120A

    npn 222

    Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) npn 222 high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

    2SD1782K ROHM

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) 2SD1782K ROHM

    2SD1898

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SB1260 2SB1241 2SB1181 2SD1898 SC-62 2SD1733

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zDimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SB1181 2SD1863 SC-72

    2SB1198K

    Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


    Original     		PDF 2SD1782K 2SB1198K. SC-59 2SB1198K 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor

    FMMT620

    Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		PDF FMMT620 INFOR43-7100 FMMT620 450-170 FMMT620TA FMMT620TC PD6255 DSA003701

    Untitled

    Abstract: No abstract text available
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


    Original     		PDF 2SD1782K 2SB1198K. SC-59

    2SD1898

    Abstract: 2SD1768 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 SC-72 DASF002499
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SD1768 2SB1181 2SD1863 SC-72 DASF002499

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO


    Original     		PDF 2SD1898 40X40X0 500mA -50mA, 100MHz

    VCEO80V

    Abstract: FMMT620 FMMT620TA FMMT620TC
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		PDF FMMT620 INFORMA26100 VCEO80V FMMT620 FMMT620TA FMMT620TC

    Vceo 80V Ic 0.5A

    Abstract: 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor
    Text: Transistors SMD Type Power Transistor 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage


    Original     		PDF 2SD1898 40X40X0 500mA -50mA, 100MHz Vceo 80V Ic 0.5A 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package


    Original     		PDF ZXTN620MA ZXTEM322 MLP322

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SD1782K OT-23 500mA/50mA 100mA -50mA, 100MHz

    smd transistor marking AJ

    Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
    Text: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF 2SD1782K OT-23 500mA/50mA 100mA -50mA, 100MHz smd transistor marking AJ transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1733 O-252 500mA -50mA, 100MHz

    log sheet air conditioning

    Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC
    Text: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTEM322 MLP322 log sheet air conditioning MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC

    NPN Transistor VCEO 80V 100V

    Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
    Text: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1733 O-252 500mA -50mA, 100MHz NPN Transistor VCEO 80V 100V 2SD1733 NPN Transistor VCEO 80V 100V hfe 100

    1128 marking

    Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222
    Text: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTEM322 MLP322 S26100 1128 marking MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 80V VSAT = 90mΩ IC = 1.5A Low Equivalent On Resistance Low Saturation Voltage


    Original     		PDF FMMT620 AEC-Q101 OT-23 J-STD-020 DS32123

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTN620MA ZXTEM322 MLP322

    DFN3020B-8

    Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor


    Original     		PDF ZXTC6720MC -185mV DFN3020B-8 J-STD-020 MIL-STD-202, ZXTC6719MC DS31929 DFN3020B-8 ZXTC6719MC ZXTC6720MC ZXTC6720MCTA