Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 VCES = 4500V IC110 = 32A VCE sat 3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXYF40N450
IC110
40N450
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Untitled
Abstract: No abstract text available
Text: S Advance Technical Information IXYL60N450 High Voltage XPTTM IGBT VCES = 4500V IC110 = 38A VCE sat 3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYL60N450
IC110
60N450
H9-645)
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage XPTTM IGBT IXYX40N450HV VCES = 4500V IC110 = 40A VCE sat 3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous
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IXYX40N450HV
IC110
O-247PLUS-HV
40N450
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage XPTTM IGBT IXYF30N450 VCES = 4500V IC110 = 17A VCE sat 3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXYF30N450
IC110
30N450
H7-645)
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage XPTTM IGBT IXYT30N450HV IXYH30N450HV VCES = 4500V IC110 = 30A VCE sat 3.9V TO-268HV (IXYT) G E Symbol Test Conditions C (Tab) Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXYT30N450HV
IXYH30N450HV
IC110
O-268HV
30N450
H7-645)
0-14-A
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CM900HB-90H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V
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CM900HB-90H
CM900HB-90H
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CM600HB-90H
Abstract: 7400 ic diagram
Text: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V
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CM600HB-90H
0135K/
CM600HB-90H
7400 ic diagram
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CM400HB-90H
Abstract: 5725C
Text: MITSUBISHI HVIGBT MODULES CM400HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HB-90H ● IC . 400A ● VCES . 4500V
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CM400HB-90H
CM400HB-90H
5725C
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD400S45KL3_B5 hochisolierendesModul highinsulatedmodule VCES = 4500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Hochleistungsumrichter • Mittelspannungsantriebe • Motorantriebe
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DD400S45KL3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter
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DD1200S45KL3
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DTS 423
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R45KL3_B5 VCES = 4500V
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FZ800R45KL3
DTS 423
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FZ1200R45KL3
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R45KL3_B5 VCES = 4500V
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FZ1200R45KL3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ1200R45HL3 VCES = 4500V IC nom = 1200A / ICRM = 2400A
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FZ1200R45HL3
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600HG-130H ● IC . 600A ● VCES . 6500V
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CM600HG-130H
/-15V
000A/Â
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CM200HG-130H
Abstract: hvigbt diode HVIGBT from Mitsubishi electric
Text: MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM200HG-130H ● IC . 200 A ● VCES . 6500 V
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CM200HG-130H
CM200HG-130H
hvigbt diode
HVIGBT from Mitsubishi electric
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V
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CM600HG-130H
000A/Â
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM200HG-130H ● IC . 200 A ● VCES . 6500 V
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CM200HG-130H
000A/Â
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CM600HG-130H
Abstract: HVIGBT from Mitsubishi electric
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V
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CM600HG-130H
CM600HG-130H
HVIGBT from Mitsubishi electric
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DIM150PSM45-F000
Abstract: No abstract text available
Text: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES
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DIM150PSM45-F000
DS5956
LN26978)
DIM150PSM45-F000
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50b60pd
Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
50b60pd
50B60PD1
50B60PD1E
AUIRGP50B60
AUIRGP50B60PD1
p50b60pd1
50b60
AUIRGP50B60PD1E
200V AUTOMOTIVE MOSFET
irfp250 DRIVER
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC
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DIM400XCM45-TS000
DS6111-1
LN30639)
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)
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DIM1200ASM45-TS000
DS6102-1
LN30516)
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM1200ASM45-TS001
DS6107-1
LN30635)
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)
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DIM1200ASM45-TS000
DS6102-1
LN30516)
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