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    VD-300 T Search Results

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    VD-300 T Price and Stock

    Vishay Intertechnologies MBB0207VD3000BCT00

    Metal Film Resistors - Through Hole MBB/SMA 0207-25 0.1% CECC 06 CT 300R
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    Vishay Intertechnologies MBB0207VD3001DCT00

    Metal Film Resistors - Through Hole
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    Vishay Intertechnologies MBB0207VD3009BCT00

    Metal Film Resistors - Through Hole MBB/SMA 0207-25 0.1% CECC 06 CT 30R
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    Vishay Intertechnologies MBB0207VD3002BCT00

    Metal Film Resistors - Through Hole MBB/SMA 0207-25 0.1% CECC 06 CT 30K
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    Vishay Intertechnologies MBB0207VD3003BCT00

    Metal Film Resistors - Through Hole MBB/SMA 0207-25 0.1% CECC 06 CT 300K
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    VD-300 T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RTL8110SB-VD RTL8110SB-VD-LF RTL8110SBL-VD RTL8110SBL-VD-LF INTEGRATED GIGABIT ETHERNET CONTROLLER LOM DATASHEET Rev. 1.6 26 October 2005 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan


    Original
    RTL8110SB-VD RTL8110SB-VD-LF RTL8110SBL-VD RTL8110SBL-VD-LF JATR-1076-21 RTL8110SB DC128-SW1 PDF

    Untitled

    Abstract: No abstract text available
    Text: RTL8305SB-VD RTL8305SB-VD-LF SINGLE-CHIP 5-PORT 10/100MBPS SWITCH CONTROLLER WITH DUAL MII INTERFACES DATASHEET Rev. 1.5 25 November 2005 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan


    Original
    RTL8305SB-VD RTL8305SB-VD-LF 10/100MBPS JATR-1076-21 128-pin PDF

    RTL8201CP reference Design

    Abstract: RTL8201CP schematic pulse h1251 RTL8201cp schematic Design RTL8201CP RTL8201bl reference Design rtl8201cp application note H1251 RTL8201cp Design rtl8201cp reference schematic
    Text: RTL8201CP RTL8201CP-LF RTL8201CP-VD RTL8201CP-VD-LF SINGLE-CHIP/SINGLE-PORT 10/100M FAST ETHERNET PHYCEIVER With Auto Crossover DATASHEET Rev. 1.24 04 November 2005 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan


    Original
    RTL8201CP RTL8201CP-LF RTL8201CP-VD RTL8201CP-VD-LF 10/100M JATR-1076-21 SS048 JATR-1076-21 RTL8201CP reference Design RTL8201CP schematic pulse h1251 RTL8201cp schematic Design RTL8201CP RTL8201bl reference Design rtl8201cp application note H1251 RTL8201cp Design rtl8201cp reference schematic PDF

    Untitled

    Abstract: No abstract text available
    Text: R1510S Series Automatic Mode Shift 36 V 300 mA LDO NO.EA-185-140123 OUTLINE The R1510S Series are CMOS-based voltage regulator LDO ICs with a voltage detector (VD) that can provide 300mA of output current. Each IC is equipped with a voltage detector and a regulator that can provide the


    Original
    R1510S EA-185-140123 300mA Room403, Room109, 10F-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: R1510S Series Automatic Mode Shift 36 V 300 mA LDO NO.EA-185-140115 OUTLINE The R1510S Series are CMOS-based voltage regulator LDO ICs with a voltage detector (VD) that can provide 300mA of output current. Each IC is equipped with a voltage detector and a regulator that can provide the


    Original
    R1510S EA-185-140115 300mA Room403, Room109, 10F-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: ALC888S-VD PN: ALC888S-VD2-GR 7.1+2 CHANNEL HD AUDIO CODEC WITH TWO INDEPENDENT SPDIF OUTPUTS DATASHEET Rev. 1.2 31 May 2011 Track ID: JATR-2265-11 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047


    Original
    ALC888S-VD ALC888S-VD2-GR) JATR-2265-11 impro-48 PKGC-065 ALC888S-VD2-GR LQFP-48 PDF

    Untitled

    Abstract: No abstract text available
    Text: R1510S Series Automatic Mode Shift 36 V 300 mA LDO for Automotive Applications NO.EC-185-140123 OUTLINE The R1510S Series are CMOS-based voltage regulator LDO ICs with a voltage detector (VD) that can provide 300mA of output current. Each IC is equipped with a voltage detector and a regulator that can provide the


    Original
    R1510S EC-185-140123 300mA Room403, Room109, 10F-1, PDF

    FG600AH

    Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
    Text: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC


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    00D1A53 80ation MAX/10 FG600AH FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH PDF

    BCR5M

    Abstract: BCR70B-12 BCR50A-16 BCR70B-16 BCR70B-24 BCR70 BCR50A12 BCR50A-4 BCR50A-6 BCR70B-4
    Text: - 189 H BCR50A • m M T-17 o i y K f ô f t t f i jf ë M Â tfltttt ntl ^ BC R50A -4 BCR50A BCR50A-6 8 BCR50A 12 BCR50A-16 Vd s m 240 360 480 720 850 Vd rm 200 300 400 600 800 /T RMS 50 ( T r = 8 3 °C , ¥ ¡II T j = 1 2 5 ”C . M in # Typ / r « = 70A


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    BCR50A MT-17 BCR50A-4 BCR50A-6 BCR50A-16 H-101 BCR5M BCR70B-12 BCR50A-16 BCR70B-16 BCR70B-24 BCR70 BCR50A12 BCR70B-4 PDF

    tf96

    Abstract: FB100D-16 FB100D-20 FB100D-4 FB100D-6 FB100D-8 FB150D20
    Text: - 191 h •W H # # F B 1OOD n MT-21 c | ± i£ t # £ 0 7 7 ■/ h m it !£ CÌÌ. » s ? 7 ^ 6 , n|r> liiin FB100D-4 Vd sm 240 360 480 720 960 1200 1350 Vd r m 200 300 400 600 800 1000 1200 II £ o / riR M S 84‘C, 12, 2 4 [ á » n nB, ffeUEMfeft) FB100D 12 FB1Û0D-16 FB100D-20 FB100D 24


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    MT-21 24liSÂ FB100D-4 FB100D-6 FB100D-8 FB100D FB100D-16 FB100D-20 H-101 tf96 FB150D20 PDF

    2SC3554

    Abstract: No abstract text available
    Text: -> I z i > h =7 > Silicon Transistor 2SC3554 N P N = ' h =ÿ — ft M i Æ i £ ^ ' > \s \d if >; □ V it iÿ j, h Tk-^PK^ -f 7'ffl mm Wl o j» /± T '& & o V cbo^300 ° '[jf-TlIìiS:- rJ Ê I> c l ^ M ì l X l Vd = V, mm) V ceo^300 V ò o 000 V T Y P. C = 2 300 p F ,


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    PDF

    MHW560

    Abstract: 1505j
    Text: MHW560 The R F Line LOW NOISE WIDEBAND AMPLIFIER MODULE WIDEBAND AMPLIFIER MODULE 40-300 MHz . designed specifically for broadband applications requiring low noise characteristics. Specified for use in C A T V distribution equipment. • Specified +50 d B m V Output, 24 Vd c Distortion Characteristics —


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    MHW560 MHW560 1505j PDF

    TIL 815

    Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
    Text: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness


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    SLD322XT SLD322XT SLD300 TIL 815 SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04 PDF

    F718

    Abstract: F7-18 3SBC1521A2
    Text: .096 *005 DIA 2 HOLES .080 REF. 1 1.062 MAX. T .450 .300 .150 i 080 REF. 8 .020 : oi DiA. 8 HOOKS .020 .150 MAX REV. 0 TOL. = ± .010 DCO 142640 COIL: @ 25°C CUSTOMER DATA SHEET 1350 OHMS ± 10% 26.5 VDC 13.5 VDC RF^ISTANfF NOMINAI VD| TAHF MUST DPFRATF


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    1/18/0OHMS F-718 M39016/13-060M 3SBC1521A2 F718 F7-18 3SBC1521A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MOC119/D SEMICONDUCTOR TECHNICAL DATA ® TO VD E UL CSA SETI SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r M OC119 6-P in DIP O ptoisolator Darlington O utput No Base Connection [C TR = 300% Min] The MOC119 device consists of a gallium arsenide infrared emitting diode optically


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    MOC119/D MOC119 OC119 0884ign PDF

    BXA15

    Abstract: BXA30 EN61000-4-2 VDE0878 BXA30-24T05-12 BXA30-48T05-15
    Text: T E Y* A RT ES V' N C H N O L O Vi I Gg I BXA30 SERIES E S Triple output • Pin-compatible WR/U and BXA15 series • Designed to m eet telecom power supply interface standard E TS 300-132-2 • UL, CSA and VDE approvals • VD E0878 and EN55022 conducted emissions level A


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    BXA15 ETS300-132-2 VDE0878 EN55022 EN61000-4-2, 350kHz BXA30 VQE0805/EN60950/1EC950 UL1950 E174104 EN61000-4-2 BXA30-24T05-12 BXA30-48T05-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 306FSR300XFV +55°C, RADIAL LEAD PARTS ARE ROHS COMPLIANT ELECTRICAL SPECIFICATIONS C ap acitan c e: 30 uF T o le ra n c e : -10 % , +20 % Dissipation Factor: 0.06 M ax at 120 Hz W VD C : 300 V o lts DC T e m p e ra tu re R ange: -25°C to +55°C


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    306FSR300XFV PDF

    FSM30C6

    Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
    Text: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)


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    FSM30C E80977) FSM30C2 FSM30C4 FSM30C6 H-101 FSM30C6 H-17 H-18 PDF

    hi pot 7700

    Abstract: ALPs vcr SHR300J26 SHR400EX24 T-23 T-24 frv12
    Text: - 101 * S H R 3 0 0 J2 6 •w k ü # # > i; □ 0h‘- 7 iiS L i7 < Œ 600V o H îjj* > ÏÊ ;t 470A ■ * * 5 È Î& liü. £ SH R300J26 ^ 720 K 5 m s , Vd sm / Vdrm /fi(AV / /«(H.MSi 300 / 470 ¡TSM 5000/5500 (50Hz/60Hz, I F . # , « 2 -+M 7 ^ î   f t )


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    SHR300J26 o470A SHR300J26 50Hz/60Hz, I25X103 75X103 H-101 hi pot 7700 ALPs vcr SHR400EX24 T-23 T-24 frv12 PDF

    DG123

    Abstract: DG123A DG123B ffl-10
    Text: — 28 8 DG 123 SPST PM OS T ^ - p y • X 'f 7 f 5 0S& (o o ^ ) S ilic o n ix • ^ S l É K ¡ í # t t ( V * = 1 0 V , F - = - 2 0 V , F * = OV, T a = 2 5 “C ) DG123A ¡Pi| Æ & ft irl 'h / s ——1mA Vü = 10V VD=1ÜV 125 150 > o II 250 300 600


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    DG123 DG123A DG123B DG123 DG123A DG123B ffl-10 PDF

    H-17

    Abstract: H-18 H-19
    Text: 188 - - 30AM 0 % nts% ïïi 30A o fcifcß#Ba f r t -7ttŒ ± # $ 20V/fis ffi&ñffif I drm 77” 30 -8 500 400 BCR AM Vd s m /riKMS ¡TSM r-'t PCM P gî AVI V gu J gm di/dl T, T"' o V dhm 300 (60Hz, 378 (60Hz, 5 0.5 10 2 125 40—125 — O iîL 1 -y- 4 7


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    bcr30am mt-24 bcr30am-8 bcr30am-12 H-101 H-17 H-18 H-19 PDF

    FG600C-50

    Abstract: FG600AV-90 FG600C50 FG600AV90 ALPs vcr fg600av FG600C-32 FG600AV-80 RM3000 FG600
    Text: - 97 H m FG600AV * -27 - "Iííflj M í > '¡Êiïïi 600A - > ± m m *V si! J*7 FG600AY 70 FG600AV-80 Vkrm Vd r m * 600 ; 7V=125#C. /riKMS 235 I 2•l di dt gk= -2\ 1 4000 Vo = ^ V d k m . 4000 60Hz, 1 I gq= - 120A, C,= 2 ^F, 300 ( r y=125*C, Max # ÍÍ.


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    FG600AV FG600AY FG600AV-80 FG600AV-90 7W25X, T/-12FC. -120A, 67X10' -10ms) FG600C-50 FG600C50 FG600AV90 ALPs vcr FG600C-32 RM3000 FG600 PDF

    2SC2688

    Abstract: transistor nec 2sc2688
    Text: -> y a > s< *7 — V = 7 > '> 7 .9 Silicon P o w e r T ran sistor N P N = $ £ if r J l2 '> • h= 7— f w u h ' ^ p y t ü j * , h t * m J i m it ffëlÜ] Vd = l 000 V T Y P . .* m m C = 2 300 pF, E - B P ^ ^ M 7 X ) c re^ 3 .0 pF(V cb = 3 0 V) fT^ 5 0


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    PDF

    BCR10EM-10

    Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
    Text: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800


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    BCR10AM-4 BCR10AM-6 BCR10AM-8 BCR10AM-10 BCR10AM-12 H-101 BCR10EM-10 TA8250 BCR10AM BCR10AM-12 BCR10EM-6 BCR10EM-8 BCR10EM-4 PDF