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    KOA Speer Electronics Inc UR73VD2BTTD15L0F

    RES 15M OHM 1% 1/2W 1206
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    DigiKey UR73VD2BTTD15L0F Digi-Reel 11,268 1
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    Mouser Electronics UR73VD2BTTD15L0F 5,233
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    KOA Speer Electronics Inc UR73VD2BTTD25L0F

    RES 25M OHM 1% 1/2W 1206
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    DigiKey UR73VD2BTTD25L0F Digi-Reel 9,762 1
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    UR73VD2BTTD25L0F Cut Tape 9,762 1
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    Mouser Electronics UR73VD2BTTD25L0F 3,624
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    Newark UR73VD2BTTD25L0F Cut Tape 26,689 10
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    TTI UR73VD2BTTD25L0F Reel 5,000
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    KOA Speer Electronics Inc UR73VD2BTTD10L0F

    RES 0.01 OHM 1% 1/2W 1206
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    DigiKey UR73VD2BTTD10L0F Digi-Reel 7,239 1
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    UR73VD2BTTD10L0F Cut Tape 7,239 1
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    UR73VD2BTTD10L0F Reel 5,000 5,000
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    Mouser Electronics UR73VD2BTTD10L0F 7,047
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    TTI UR73VD2BTTD10L0F Reel 5,000
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    KOA Speer Electronics Inc UR73VD2BTTD20L0F

    RES 20M OHM 1% 1/2W 1206
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    DigiKey UR73VD2BTTD20L0F Digi-Reel 5,136 1
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    UR73VD2BTTD20L0F Cut Tape 5,136 1
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    UR73VD2BTTD20L0F Reel 5,000 5,000
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    Mouser Electronics UR73VD2BTTD20L0F 10,190
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    Bristol Electronics UR73VD2BTTD20L0F 5,418
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    TTI UR73VD2BTTD20L0F Reel 25,000 5,000
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    Chip One Stop UR73VD2BTTD20L0F Cut Tape 2,002
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    Caddock Electronics Inc USVD2-B10M-010-02

    RES NETWORK 2 RES MULT OHM 4SIP
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    DigiKey USVD2-B10M-010-02 Bulk 891 1
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    Mouser Electronics USVD2-B10M-010-02 86
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    Newark USVD2-B10M-010-02 Bulk 50
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    VD2B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S2083

    Abstract: No abstract text available
    Text: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V1 VD2a VD2a VD1a VG2a 1 15 GND GND GND RFIN RFOUT GND GND 5 11 10 6 Each device is 100% RF tested to ensure performance compliance. GND VD2b GND VD2b The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN


    Original     		MAAP-011027 20-lead MAAP-011027 S2083 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V2 VG2a VD1a VD2a VD2a 18 17 16 1 15 GND GND 2 14 GND RFIN 3 13 RFOUT GND 4 12 GND GND 5 11 GND This power amplifier is ideally suited for Point-toPoint Radios and C-band radar applications. 6 7 8 9 10 VD2b


    Original     		MAAP-011027 20-lead MAAP-011027 M0-220, S2083 PDF

    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107 PDF

    30SPA0553

    Abstract: 30SPA0557 84-1LMI
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


    Original     		30SPA0553 01-Sep-05 MIL-STD-883 30SPA0553 30SPA0557 84-1LMI PDF

    P1015-BD

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		10-Aug-07 P1015-BD MIL-STD-883 XP1015-BD-000V XP1015-BD-EV1 XP1015 PDF

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech PDF

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia PDF

    44MPA0478

    Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept


    Original     		29-Jan-09 P1057-BD MIL-STD-883 anD-000V XP1057-BD-EV1 XP1057-BD PDF

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA1002 RFPA1002 9.8GHz to 13.5GHz High Linearity 9.8GHz TO 13.5GHz HIGH LINEARITY POWER AMPLIFIER Package: Ceramic QFN, 40-pin, 6mm x 6mm x 0.95mm 40 Features 39 38 37 36 Vd1 35 Vg2 34 33 Vd2a 32 31 1 30 2 GND 29 3 28 RFin  Frequency Range: 9.8GHz to


    Original     		RFPA1002 40-pin, 17dBm 50dBc 22dBm 39dBc 25dBm 32dBc PDF

    MAAP-010171

    Abstract: radar amplifier s-band
    Text: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features •      Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Ω Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound


    Original     		MAAP-010171 20-lead MAAP-010171 radar amplifier s-band PDF

    P1016

    Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1016-BD 15-Feb-10 MIL-STD-883 XP1016-BD XP1016-BD-EV1 XP1016 P1016 DM6030HK XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic PDF

    Untitled

    Abstract: No abstract text available
    Text: Real time clock module REAL TIME CLOCK MODULE I2C-Bus Product Number (Please contact us) RX-8035SA: X1B000172xxxx00 RX-8035LC: X1B000182xxxx00 High-Stability Frequency with Built in Timestamp and Power Switching RX-8035SA/LC •Built-in 32.768 kHz crystal unit


    Original     		RX-8035SA: X1B000172xxxx00 RX-8035LC: X1B000182xxxx00 400kHz) RX-8035SA RX-8035LC PDF

    Untitled

    Abstract: No abstract text available
    Text: TGC4703-FC 19 to 38 GHz Doubler Key Features • • • • • • • • Measured Performance Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V, • 16 Primary Applications 15 • • 14 13 11 10 Product Description 9 8 Input Freq: 19.25 GHz 7 6


    Original     		TGC4703-FC PDF

    P1028

    Abstract: 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 P1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1016-BD 04-Dec-09 MIL-STD-883 XP1016-BD-EV1 XP1016 PDF

    Untitled

    Abstract: No abstract text available
    Text: XP1026-BD Power Amplifier 27.0-32.0 GHz Rev. V1 Features Chip Device Layout •     Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power


    Original     		XP1026-BD MIL-STD-883 PDF

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT PDF

    DIODE d1d

    Abstract: diode d3d 25C5250 B23G diode D2B
    Text: MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the


    Original     		MRFIC1859 GSM900/DCS1800 MRFIC1859 AN1599 MRFIC0913 MC33169 AN1697 DIODE d1d diode d3d 25C5250 B23G diode D2B PDF

    RX-4035LC

    Abstract: No abstract text available
    Text: Real time clock module Product Number Please contact us RX-4035SA: X1B000192xxxx00 RX-4035LC: X1B000202xxxx00 High-Stability Frequency with Built in Timestamp and Power Switching SPI-Bus REAL TIME CLOCK MODULE RX-4035SA/LC •Built-in 32.768 kHz crystal unit


    Original     		RX-4035SA: X1B000192xxxx00 RX-4035LC: X1B000202xxxx00 RX-4035SA/LC 5106/Ta= RX-40 RX-4035LC PDF

    ablestick

    Abstract: 30SPA0557 84-1LMI
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		30SPA0557 20-May-05 ablestick 30SPA0557 84-1LMI PDF

    P1027-BD

    Abstract: p1027 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1 ka-band transistor
    Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1027-BD 27-Mar-07 MIL-STD-883 XP1027-BD XP1027-BD-000V XP1027-BD-EV1 XP1027-BD P1027-BD p1027 30SPA0536 DM6030HK TS3332LD XP1027-BD-000V XP1027-BD-EV1 ka-band transistor PDF

    SA051

    Abstract: HEMT Amplifier
    Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA


    OCR Scan     		APH212C APH212C SA051 006/J-2 SA051 HEMT Amplifier PDF