VDS25 Search Results

VDS25 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SN65LVDS250DBT		Texas Instruments	2.0 Gbps 4x4 Crosspoint Switch 38-TSSOP -40 to 85
SN65LVDS250DBTR		Texas Instruments	2.0 Gbps 4x4 Crosspoint Switch 38-TSSOP -40 to 85

VDS25 Price and Stock

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ECS International Inc ECS-LVDS25-2000-A XTAL OSC XO 200.0000MHZ LVDS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ECS-LVDS25-2000-A	Digi-Reel	9,497		1	1 $10.28 10 $8.935 100 $8.935 1000 $8.935 10000 $8.935	Buy Now
	ECS-LVDS25-2000-A	Cut Tape	9,497		1	1 $10.28 10 $8.935 100 $8.935 1000 $8.935 10000 $8.935	Buy Now
	ECS-LVDS25-2000-A	Reel	9,000		500	1 - 10 - 100 - 1000 $6.87618 10000 $6.87618	Buy Now
Mouser Electronics	ECS-LVDS25-2000-A		504			1 $9.64 10 $9.61 100 $9.61 1000 $6.87 10000 $6.87	Buy Now
Master Electronics	ECS-LVDS25-2000-A					1 - 10 - 100 - 1000 $9.93 10000 $9.93	Buy Now
ECS International Inc ECS-LVDS25-1000-A XTAL OSC XO 100.0000MHZ LVDS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ECS-LVDS25-1000-A	Cut Tape	1,704		1	1 $6.1 10 $5.877 100 $6.1 1000 $6.1 10000 $6.1	Buy Now
	ECS-LVDS25-1000-A	Digi-Reel	1,704		1	1 $6.1 10 $5.877 100 $6.1 1000 $6.1 10000 $6.1	Buy Now
	ECS-LVDS25-1000-A	Reel	1,000		500	1 - 10 - 100 - 1000 $4.43387 10000 $4.39161	Buy Now
Mouser Electronics	ECS-LVDS25-1000-A		253			1 $5.62 10 $4.85 100 $4.75 1000 $4.09 10000 $4.09	Buy Now
Master Electronics	ECS-LVDS25-1000-A					1 - 10 - 100 - 1000 $4.9 10000 $4.9	Buy Now
Rochester Electronics LLC SN65LVDS250DBT SN65LVDS250 2.0 GBPS 4X4 CROSSPO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN65LVDS250DBT	Bulk	552		26	1 - 10 - 100 $11.59 1000 $11.59 10000 $11.59	Buy Now
ECS International Inc ECS-LVDS25-1562.5-A XTAL OSC XO 156.2500MHZ LVDS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ECS-LVDS25-1562.5-A	Digi-Reel	490		1	1 $5.37 10 $4.669 100 $4.0582 1000 $4.0582 10000 $4.0582	Buy Now
	ECS-LVDS25-1562.5-A	Cut Tape	490		1	1 $5.37 10 $4.669 100 $4.0582 1000 $4.0582 10000 $4.0582	Buy Now
Mouser Electronics	ECS-LVDS25-1562.5-A					1 - 10 - 100 - 1000 $4.19 10000 $4.19	Get Quote
Master Electronics	ECS-LVDS25-1562.5-A					1 - 10 - 100 - 1000 $5.52 10000 $5.52	Buy Now
Texas Instruments SN65LVDS250DBT IC CROSSPOINT SW 1 X 4:4 38TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN65LVDS250DBT	Tube	42		1	1 $17.23 10 $13.685 100 $11.8262 1000 $11.0825 10000 $11.0825	Buy Now
Mouser Electronics	SN65LVDS250DBT		129			1 $17.01 10 $14.58 100 $10.94 1000 $10.94 10000 $10.94	Buy Now
Rochester Electronics	SN65LVDS250DBT		552		1	1 $11.14 10 $11.14 100 $10.47 1000 $9.47 10000 $9.47	Buy Now

Find more VDS25 price and stock on Findchips.com

VDS25 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
YTFP451 Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:	OCR Scan	PDF	YTFP451 500nA 250uA Ta-25 -55M50 VDS-25V, ID-16A VGS-10V IDR-13A YTFP451
Untitled Abstract: No abstract text available Text: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier	OCR Scan	PDF	IRLZ24S) IRLZ24L)
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER bSE D 4Û 5 S 4S 2 O O l b E C n 4TT • INR Bulletin E2793 International [îôrIRectifier IRFK2P350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration ■ • • • High Current Capability. UL recognised E78996.	OCR Scan	PDF	E2793 IRFK2P350 IRFK2F350 E78996.
APT801R2cN Abstract: C 632 S1M Text: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q	OCR Scan	PDF	Q0GQ777 APT801R2CN APT751R2CN APT801R4CN APT751R4CN 751R2CN 801R2CN 751R4GCN 801R4CN g-100 C 632 S1M
Untitled Abstract: No abstract text available Text: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER	OCR Scan	PDF	863-594G 63bfibD2
Untitled Abstract: No abstract text available Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q	OCR Scan	PDF	APT1004RCN APT904RCN APT1004R2CN APT904R2CN 904RCN 1004RCN 904R2CN 1004R2CN APT1004R/1 004R2GN
nK2647 Abstract: T151 2sk2647 N CH FET 600V 9A Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P o w e r M O S F E T 2 SK 2 6 4 T - 0 1M R SPEC. No. Fuj i E l e c t r i c . Co., Ltd. This Specification is subject to change without notice. OATE DRAWN NAME APPROVED Fuji Electric C o jid CHECKED 12 Y 025T-R-004a	OCR Scan	PDF	0257-R-004a 2SK2647-0 T0-22QF EaTl30 nK2647 T151 2sk2647 N CH FET 600V 9A
JJ SMD diode Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF Text: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature	OCR Scan	PDF	IRL530S SMD-220 JJ SMD diode AN-994 IRL530S smd diode marking mp smd diode JF
72Z4 Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets Text: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: PD-9.633A International HfH Rectifier IRLR110 IRLU110 HEXFET Power M OSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR110 Straight Lead (IRLU110) Available in Tape & Reel Logic-Level Gate Drive RDS<on) Specified at V gs =4V & 5V	OCR Scan	PDF	IRLR110 IRLU110 IRLR110) IRLU110) VDS25
Untitled Abstract: No abstract text available Text: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel	OCR Scan	PDF	IRFR220 IRFU220 IRFR220) IRFU220) VDS25
Untitled Abstract: No abstract text available Text: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)	OCR Scan	PDF	A3bflb02 MIL-S-19500 SDF17N60
Untitled Abstract: No abstract text available Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE	OCR Scan	PDF	fl3bflb02 00G353b 5DF140 SDF140 MIL-S-19500 IF-25A. IF-25A 300nS.
IC A244 Abstract: 2SK950 schematic UPS ica Text: 2SK950 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications Gate Drain Source • Switching regulators	OCR Scan	PDF	2SK950 O-22QAB SC-46 Tc-25Â IC A244 2SK950 schematic UPS ica

2SK2469-01MR Abstract: No abstract text available Text: '95 No. 11 F U J I V4># iw o M s iT it e u e ,<W\|; 4^ ^ y \|i< iu v s <\|#i t i l ±W imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET	OCR Scan	PDF	300V/5A/1 2SK2469-01MR ls30EJ 2SK2469-01MR
2n2709 Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300 Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF	THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 2n2709 C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Untitled Abstract: No abstract text available Text: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR014) IRFU014) IRFR014 IRFU014 T0-251AA VDS25
zvp3310a Abstract: No abstract text available Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94 FEATURES * 100 Volt VDS # Rds , « , - » « ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS -100 V Continuous Drain Current at Tam^=25°C •d -140 mA Pulsed Drain Current ■dm	OCR Scan	PDF	ds--80V, Vds--25 VGS--10V -150mA -150mA ZVP3310A zvp3310a
Untitled Abstract: No abstract text available Text: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	PDF	TCH7550 YTFP451 -450V 250ijA VDS-25V, VGS-10V Ta-25Â IDR-13A 00A/us
Untitled Abstract: No abstract text available Text: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	PDF	YTFP453 IDSS-250u VDS-450V I0-25O H360V VGS-10V Ta-25Â IDR-12A dlQR/dt-100A/us
Untitled Abstract: No abstract text available Text: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS	OCR Scan	PDF	001L7t 100nA IDSS-300/ S-900V
YTFP452 Abstract: No abstract text available Text: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	PDF	0017Tflb YTFP452 IDSS-250uA VDS-500V Ijj-250uA Te-25Â RGSm20kfi) Vddn210V VGS-10V Ta-25< YTFP452
Untitled Abstract: No abstract text available Text: SOLITRON DEVICES INC \ SFNF065D 70 DË^Û3t,ôbDE □ □□nflfc, 2 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS *0 IDM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 50 V Drain Current, Continuous @ Tc=25°C 4.0 A	OCR Scan	PDF	SFNF065D 5M6-24UNF-2A P06fTKM eA03AT
transistor k79 Abstract: 2sk793 Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A Ï Ï “ ^ E ~ \| , 0 1 7 5 5 0 001I.7U, 3 99D D I S C R E T E /O PTO SEMICONDUCTOR 16766 D T -3 9 -1 3 TOSHIBA FIELD EFFECT TRANSISTOR 2S K79 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (ff-MOS) INDUSTRIAL APPLICATIONS	OCR Scan	PDF	il00nA 2SK793 transistor k79 2sk793

VDS25 Search Results

VDS25 Result Highlights (2)

VDS25 Price and Stock

ECS International Inc ECS-LVDS25-2000-A

ECS International Inc ECS-LVDS25-1000-A

Rochester Electronics LLC SN65LVDS250DBT

ECS International Inc ECS-LVDS25-1562.5-A

Texas Instruments SN65LVDS250DBT

VDS25 Datasheets Context Search

YTFP451

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APT801R2cN

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nK2647

JJ SMD diode

72Z4

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IC A244

2SK2469-01MR

2n2709

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zvp3310a

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YTFP452

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transistor k79