GM72V66441
Abstract: GM72V66841
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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GM72V66841CT
72V66841C
GM72V66841CT
TTP-54D)
GM72V66441
GM72V66841
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gm72v661641ct
Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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72V661641C
GM72V661641CT
GM72V661641CT
TTP-54D)
72V661641
GM72V661641
GM72V66441
vero cells
12A13
gm72v661641c
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GM72V66441ct
Abstract: GM72V66441 12A13 1641CT
Text: Preliminary VerO. 1 ,„ e . LG Semicon Co.,Ltd. GM72V66441CT-7/8/10 4 , 194,304 w o r d x 4 b i t x 4 b a n k SYN C HR O N O U S DYNAM IC RAM Description The G M 72V66441C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics
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72V66441C
GM72V66441CT-7/8/10
BA1/A13
BA0/A12
GM72V66441CT
72V6644ICT
TTP-54D)
TTP-54D
GM72V66441ct
GM72V66441
12A13
1641CT
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LR Amps
Abstract: SDA167A SDA167B SDA167C SDA167D SDA167E SDA167F SDA167G 35 AMP BRIDGE RECTIFIER
Text: 25 amp bridge rectifier assembly * * * * ' * * Average output 25 Amps PIV 50 to 1000 Volts M a x i m u m thermal resistance 1.5°C/Watt Universal Three-Way terminals All machined aluminum case Glass passivated diode cells Case electrically insulated SSDI introduces a n e w and compl e t e line of Three-Phase, Bridge Rectifier
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Content Addressable Memory Element CAME PXB 4360 F Version 1.1 Preliminary Data Sheet 10.97 DS 1 PXB 4360 F CONFIDENTIAL Revision History: Previous Version: Page in previous Version Page (in current Version) Current Version: 10.97
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Untitled
Abstract: No abstract text available
Text: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable
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Untitled
Abstract: No abstract text available
Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted
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E2G1059-18-74
16M/18Mb
MSM5716C50/M
5718C50/
D5764802
/64-M
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GM73V1892H16C
Abstract: GM73V1892H gm73v1892 GM73V1892H-16C concurrent rdram AA3J rdram concurrent 72M VI892H RDRAM concurrent concurrent rdram 1m
Text: GM73 VI892H-J 6C L G S e m i c o n G M 73V IS92H -I6C 2M WORDS X 9 B IT C M O S D Y N A M IC R A M C o .,L td . Description The G M 73V 1892H Concurrent Rambus DRAM series are extremely high-speed CM OS DRA M s organized as 2M words by 9 bits. They are capable o f bursting unlimited
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VI892H-J
IS92H
1892H
SHP-32
VI892H-16C
GM73V1892H16C
GM73V1892H
gm73v1892
GM73V1892H-16C
concurrent rdram
AA3J
rdram concurrent 72M
VI892H
RDRAM concurrent
concurrent rdram 1m
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION The 18-M egabit C oncurrent Ram bus D R A M s R D R A M are extrem ely high-speed C M O S D R A M s organized as 2M w ords by 9 bits. They are capable of bursting unlim ited lengths of data at 1.67ns per byte (13.3 ns per eight bytes). The use of Ram bus Signaling Leve l (R S L ) technology perm its
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SHP-32
MSM5718C50
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RDRAM SOP
Abstract: rdram clock generator concurrent RDRAM 72 RDRAM concurrent
Text: E2G1059-28-Y1 O K I Semiconductor M S M 5 7 1 8 C 5 / M P 5 7 Previous version: Jul. 1998 6 4 8 2 ~ 18Mb 2M x 9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 18/64-M egabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M or 8 M words by 8 or 9 bits. They are capable of bursting unlimited
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E2G1059-28-Y1
18/64-M
SHP32-P-1125-0
RDRAM SOP
rdram clock generator
concurrent RDRAM 72
RDRAM concurrent
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ANB I AD
Abstract: MD5764802 MD5764802-53GS-K MSM5716C50-53GS-K MSM5716C50-60GS-K MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 RDRAM SOP OKI RDRAM 18
Text: E2G1059-18-74 O K I Semiconductor T his version: Jul. 1998 M S M 5 7 16 C5 0 / M S M 5 7 18 C5 0 / M D 5 7 6 4 8 0 2 _ 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 16/18/64-M egabit C o n cu rre n t R a m b u s D R A M s (R D R A M ) are extrem ely high-speed
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E2G1059-18-74
MSM5716C50/MSM5718C50/
MD5764802
16M/18Mb
16/18/64-Megabit
ANB I AD
MD5764802
MD5764802-53GS-K
MSM5716C50-53GS-K
MSM5716C50-60GS-K
MSM5718C50-53GS-K
MSM5718C50-60GS-K
SHP32-P-1125-0
RDRAM SOP
OKI RDRAM 18
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Untitled
Abstract: No abstract text available
Text: Preliminary Information AMD-K6 -2 Processor Data Sheet 21850D/0 —August 1998 1 AMD£I AMD-K6®-2 Processor • A dvanced 6-Issue RISC86® S uperscalar Micro arch itectu re ♦ Ten p a ra lle l specialized execution un its ♦ M ultiple sophisticated x86-to-RISC86 in stru ctio n decoders
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21850D/0
RISC86Â
x86-to-RISC86
RISC86
64-Kbyte
32-Kbyte
20-Kbytes
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THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
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200X300X360m
THERMISTORS nsp 037
Thyristor TAG 9118
ICA 0726 0148 Transformer
a1273 y k transistor
AM97C11CN
transistor SK A1104
PM7A2Q
B8708
bzy79
yh 5032
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220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
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P390-ND
P465-ND
P466-ND
P467-ND
LNG901CF9
LNG992CFBW
LNG901CFBW
LNG91LCFBW
220v AC voltage stabilizer schematic diagram
BA 49182
RJh 3047
rjh 3047 equivalent
a1458 opto
philips ecg master replacement guide
MOSFET, rjh 3077
sc1097
philips ecg semiconductors master replacement guide
Electronic ballast 40W using 13005 transistor
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