Lovoltech
Abstract: LD103SB6 LD103SF6 LD103SG6 BVGD
Text: www.Lovoltech.com PWRLITE LD103SB6, LD103SF6 High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules
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LD103SB6,
LD103SF6
Lovoltech
LD103SB6
LD103SF6
LD103SG6
BVGD
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JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net
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OT-23
JFET TRANSISTOR REPLACEMENT GUIDE j201
J201 spice
J108 SOT-23 FET
DATASHEET OF TRANSISTOR 2N5485
JFET TRANSISTOR REPLACEMENT GUIDE
Direct replacement to LH0033
FET equivalent of 2N4352
2N4352 FET EQUIVALENT
s0 sot-23 mosfet
U402 N CHANNEL FET
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lovoltech
Abstract: jfet transistor vertical JFET LD1101
Text: www.Lovoltech.com PWRLITE LD1101S High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications VGA and Graphic Cards DDR, SDRAM for stand-by operation Power Supply DC-DC Converters Synchronous Rectifiers PC Motherboard Converters
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LD1101S
lovoltech
jfet transistor
vertical JFET
LD1101
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jfet transistor
Abstract: lovoltech LD1006N LVTD1006N lovoltech no diode
Text: www.Lovoltech.com PWRLITE LD1006N High Performance N-Ch Vertical Power JFET Transistor Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that
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LD1006N
jfet transistor
lovoltech
LD1006N
LVTD1006N
lovoltech no diode
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lovoltech
Abstract: jfet transistor TO252-DPAK package LD1105N TO252-DPAK LD1105 j-fet transistor marking A1 TRANSISTOR lovoltech no diode
Text: PWRLITE LD1105N High Performance N-Ch Vertical Power JFET Transistor Description Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC
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LD1105N
lovoltech
jfet transistor
TO252-DPAK package
LD1105N
TO252-DPAK
LD1105
j-fet transistor
marking A1 TRANSISTOR
lovoltech no diode
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lovoltech
Abstract: LD1006S LVTD1006S LVTD1006SB marking symbol ER transistor
Text: www.Lovoltech.com PWRLITE LD1006S High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that
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LD1006S
lovoltech
LD1006S
LVTD1006S
LVTD1006SB
marking symbol ER transistor
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Lovoltech
Abstract: LD103SG6
Text: www.Lovoltech.com PWRLITE LD103SG6 High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that
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LD103SG6
Lovoltech
LD103SG6
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Lovoltech
Abstract: pn diode LVTD103D LVTS103
Text: www.Lovoltech.com PWRLITE LVTD103D High Performance N-Ch Vertical Power JFET Transistor with Diode Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC
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LVTD103D
Lovoltech
pn diode
LVTD103D
LVTS103
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lovoltech
Abstract: jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
Text: www.Lovoltech.com PWRLITE-LS203N High Performance N-Ch Vertical Power JFET Transistor “No Body Diode” transistor replaces 2 MOSFETs devices with 1 JFET Low Rdson to improve efficiencies Low drop-out for longer time operations per charge Very low leakage in off conditions
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PWRLITE-LS203N
lovoltech
jfet transistor
vertical JFET
LS203N
S203N
TRANSISTOR a 1980
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lovoltech
Abstract: jfet transistor LVTB103N LVTS103 Diode and Transistor 1980
Text: www.Lovoltech.com PWRLITE LVTB103N High Performance N-Ch Vertical Power JFET Transistor “No Diode” Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that
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LVTB103N
lovoltech
jfet transistor
LVTB103N
LVTS103
Diode and Transistor 1980
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LD1010D
Abstract: Lovoltech LD1010D equivalent vertical LD1010D LD103SG6 IR 2E02 ld1010d.rev
Text: www.Lovoltech.com PWRLITE LD1010D High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that
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LD1010D
LD1010D
Lovoltech
LD1010D equivalent
vertical LD1010D
LD103SG6
IR 2E02
ld1010d.rev
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Lovoltech
Abstract: LVTS103 LVTD103N lovoltech no diode
Text: www.Lovoltech.com PWRLITE LVTD103N High Performance N-Ch Vertical Power JFET Transistor “No Diode” Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC
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LVTD103N
Lovoltech
LVTS103
LVTD103N
lovoltech no diode
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Lovoltech
Abstract: PN 1204 pn diode LU1004D LD103SG6 POWERJFET 028E-02 5E02 A 673 C2 transistor
Text: PWRLITE LU1004D High Performance N-Ch Vertical POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LU1004D
Lovoltech
PN 1204
pn diode
LU1004D
LD103SG6
POWERJFET
028E-02
5E02
A 673 C2 transistor
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STripFET
Abstract: STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L
Text: Power MOSFETs STripFETTM V STripFET V: main features Metal layer RMET reduction Sketch of STripFET V Structure METAL TEOS POLY SOURCE BODY Drain engineering REPI reduction Enhan. DE Double gate oxide thickness Qg reduction DE Vertical contact µ-Trench Rch reduction
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STD85N3LH5
STU70N2LH5*
STU95N2LH5*
STU60N3LH5
STU85N3LH5
STL65N3LLH5
STL150N3LLH5
STK25N3LLH5^
STK38N3LLH5^
STripFET
STD85N3LH5
STS14N3LLH5
44 LS 95
NC 1350
ls 7400
7400 ls
STU60N3LH5
STD60N3LH5
STD50N03L
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car airbag
Abstract: mosfet firing circuit 62726 Si4410 gate firing of d.c drive depletion 60V power mosfet MOS Controlled Thyristor trench power mosfet bv27 mosfet triggering circuit
Text: Complementary Trench Power MOSFETs Define New Levels of Performance Richard K. Williams, King Owyang, Hamza Yilmaz, Mike Chang, and Wayne Grabowski Introduction The vertical power MOSFET has become the preeminent switching device in modern power semiconductors, in part due to its capacity for low
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Sharp amplifier SM30
Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power
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-55oC
175oC.
Sharp amplifier SM30
Spice Model for TMOS Power MOSFETs
NMOS depletion pspice model
RFH75N05 datasheet
Spice 2 computer models for hexfets
RFH75N05
Hal Ronan
AN9210
TRANSFORMER ERL 35
VDMOS DEVICE
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Spice 2 computer models for hexfets
Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power
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-55oC
175oC.
Spice 2 computer models for hexfets
pspice high frequency mosfet
n mosfet depletion pspice model parameters
RFH75N05 datasheet
Sharp amplifier SM30
Spice Model for TMOS Power MOSFETs
an8610
RFH75N05
SM30
AN1043 Spice Model for TMOS Power MOSFETs
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Untitled
Abstract: No abstract text available
Text: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of
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ALA400/401
ALA400/401
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pnp 8 transistor array
Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Text: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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ALA400/401
51AL230240
D-8000
DS87-61LBC
pnp 8 transistor array
ALA400
transistor BIPOLAR
npn 8 transistor array
1000 volt pnp transistor
JFET 401
ARRAY resistor
DS87-61LBC
kss 216
complementary JFET
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Untitled
Abstract: No abstract text available
Text: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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ALA400/401
51AL230240
D-8000
DS87-61LBC
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Untitled
Abstract: No abstract text available
Text: EXAR CORP TI 3422618 D E | 3M2Eblfi □ □QM7L.7 S 91D 04767 EXAR CORP XR-U100 Master-Chip Itanslstors Total Components: 577 NPN, small: 94 NPN, 100 mA: 2 J-FET P-channel : 4 PNP, dual collector: 40 PNP, med. vertical: 2 PNP, vertical: 8 Implant Resistors
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XR-U100
10kft:
20kft:
50kft:
900ft:
305kii
110x110
XR-1568/XR-1468C
XR-1468/1568
XR-1468/1568
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Untitled
Abstract: No abstract text available
Text: SUMMER/FALL 1994 SHORTFORM ANALOG SOLUTIONS: Wideband Buffers & Amplifiers CRT Driver Amplifiers Operational Amplifiers & Voltage References High Speed Lateral DMOS Switches Vertical DMOS Switches JFETs Custom Solutions ALPHA OMEGA SALES 325 MAIN ST. • N. READING, MA 01864
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CALLC002
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T 402 transistor
Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte grated circuits consisting of vertical NPN and PNP
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ALA401/402
PR352A21
PR352A2
NR151A01
NR151
005002b
T 402 transistor
702 TRANSISTOR npn
transistor+1906
pnp 8 transistor array
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pnp 8 transistor array
Abstract: ALA401 Boron 220 resistor array ALA402 RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY
Text: A T & T MELEC I C 2SE D • G0 5 G 0 2 b 000^54 1 Preliminary Data Sheet ALA401/402 Semicustom Linear Arrays Description The ALA401/402 Semicustom Linear Arrays are fabricated using a complementary bipolar integrated cir cuit (CBIC) process that offers the advantages of vertical NPN and PNP transistors. CBIC technology
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005005b
0002T54
ALA401/402
ALA401
ALA402
5002b
100x10-3
pnp 8 transistor array
Boron
220 resistor array
RESISTORS
transistor array pnp
npn 8 transistor array
GL RESISTOR ARRAY
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