Hitachi DSA002712
Abstract: 1SS286
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
ADE-208-302A
1SS286
DO-34
Hitachi DSA002712
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JESD51-5
Abstract: JESD51-7 JESD-51-7
Text: Central CTLSH1-40M621H Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile 0.4mm , low VF Schottky diode in a small, thermal efficient,
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CTLSH1-40M621H
CTLSH1-40M621H
TLM621H
500mA,
JESD51-5
JESD51-7.
JESD51-7
JESD-51-7
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very low reverse current
Abstract: ultra low forward voltage diode
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Guard ring protected • Ultra small SMD package. Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes
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1SS06AWT
OD-523
very low reverse current
ultra low forward voltage diode
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Untitled
Abstract: No abstract text available
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes
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1SS06AWT
OD-523
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smd code marking book
Abstract: diode SMD MARKING CODE S
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Ultra small SMD package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 J Applications • Ultra high-speed switching • Voltage clamping • Protection circuits
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1SS06AWT
OD-523
OD-523
smd code marking book
diode SMD MARKING CODE S
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AP2001
Abstract: J-STD-020A MBRM5100H MBRM5100H-13
Text: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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MBRM5100H
DS30378
MBRM5100H-13
5000/Tape
com/datasheets/ap02007
AP2001
J-STD-020A
MBRM5100H
MBRM5100H-13
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AP2001
Abstract: J-STD-020A MBRM5100H MBRM5100H-13
Text: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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MBRM5100H
DS30378
MBRM5100H-13
5000/Tape
com/datasheets/ap02007
AP2001
J-STD-020A
MBRM5100H
MBRM5100H-13
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Z9 SOD323
Abstract: transistor z9 BAT60BWS
Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • High current rectifier Schottky diode with very low VF drop • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion Absolute Maximum Ratings Ta = 25 OC
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BAT60BWS
OD-323
OD-323
Z9 SOD323
transistor z9
BAT60BWS
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01071
Abstract: S10120
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10120CC
O-257
MSiCSN10120CC
T4-LDS-0107-1,
01071
S10120
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.282 rev. C 07/01 440CNQ030 440 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 440CNQ. Units The 440CNQ030 center tap, high current, Schottky rectifier module has been optimized for very low forward voltage drop,
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440CNQ030
440CNQ.
440CNQ030
08-Mar-07
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NSR1020MW2T1G
Abstract: NSR1020MW2T3G 5M MARKING CODE SCHOTTKY DIODE
Text: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2T1G
OD-323
NSR1020MW2T1/D
NSR1020MW2T1G
NSR1020MW2T3G
5M MARKING CODE SCHOTTKY DIODE
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Semtech Electronics
Abstract: BAT60BWS marking Z9 diode z9 Z9 SOD323
Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • PIN High current rectifier Schottky diode with very low VF drop typ.0.24 V at IF =10mA • For power supply applications • For clamping and protection in DESCRIPTION 1 Cathode 2 Anode 2 1 Z9 low voltage applications
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BAT60BWS
OD-323
t10ms)
OD-323
Semtech Electronics
BAT60BWS
marking Z9
diode z9
Z9 SOD323
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BAT60BWS
Abstract: TS28 transistor z9 z9 diode
Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • PIN High current rectifier Schottky diode with very low VF drop typ.0.24 V at IF =10mA • For power supply applications • For clamping and protection in DESCRIPTION 1 Cathode 2 Anode 2 1 Z9 low voltage applications
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BAT60BWS
OD-323
t10ms)
OD-323
BAT60BWS
TS28
transistor z9
z9 diode
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Untitled
Abstract: No abstract text available
Text: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2T1G
NSR1020MW2T1/D
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Untitled
Abstract: No abstract text available
Text: NSR1030MW2T1G Product Preview Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1030MW2T1G
NSR1030MW2/D
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TE 555
Abstract: 220CMQ030 IRFP460
Text: Bulletin PD-2.555 rev. A 07/01 220CMQ030 SCHOTTKY RECTIFIER 220 Amp TO-244AB isolated Major Ratings and Characteristics Characteristics Description/Features 220CMQ030 Units The 220CMQ030 center tap, high current, Schottky rectifier module has been optimized for very low forward voltage drop,
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220CMQ030
O-244AB
220CMQ030
FL40S02
TE 555
IRFP460
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440CMQ030
Abstract: IRFP460
Text: Bulletin PD-2.369 rev. B 08/01 440CMQ030 440 Amp SCHOTTKY RECTIFIER TO-244AB isolated Description/Features Major Ratings and Characteristics Characteristics 440CMQ030 Units The 440CMQ high current Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate
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440CMQ030
O-244AB
440CMQ030
440CMQ
IRFP460
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SemiWell Semiconductor
Abstract: W30M40CT
Text: PROVISIONAL W30M40CT SemiWell Semiconductor 30A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection
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W30M40CT
UL94V-0
MIL-STD202
O-247
W30M40CT
Maximum10
50mVP-P
SemiWell Semiconductor
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P20M40CT
Abstract: 20A SCHOTTKY BARRIER RECTIFIER
Text: PROVISIONAL P20M40CT SemiWell Semiconductor 20A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection
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P20M40CT
UL94V-0
MIL-STD202
O-220
P20M40CT
50mVP-P
20A SCHOTTKY BARRIER RECTIFIER
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SemiWell Semiconductor
Abstract: P16M40CT semiwell
Text: PROVISIONAL P16M40CT SemiWell Semiconductor 16A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection
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P16M40CT
UL94V-0
MIL-STD202
O-220
P16M40CT
50mVP-P
SemiWell Semiconductor
semiwell
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P10M40CT
Abstract: No abstract text available
Text: PROVISIONAL P10M40CT SemiWell Semiconductor 10A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection
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P10M40CT
UL94V-0
MIL-STD202
O-220
P10M40CT
Maximu75-
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1SS286
Abstract: No abstract text available
Text: 1SS286-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Very low reverse current. • Detection efficiency is very good. • Sm all glass package MHD enables easy mounting and high reliability.
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1SS286
20jiA
1SS286
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Untitled
Abstract: No abstract text available
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI A DE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
DE-208-302A
200pF,
DO-34
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do-34 hitachi
Abstract: very low reverse current 1SS286
Text: ADE-208-242 Z 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Rev. 0 Dec. 1994 Outline Features • Very low reverse current. • Detection efficiency is very good. • Sm all glass package (M H D ) enables easy mounting and high reliability.
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1SS286
ADE-208-242
1SS286
DO-34
do-34 hitachi
very low reverse current
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