1SS286
Abstract: No abstract text available
Text: 1SS286-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Very low reverse current. • Detection efficiency is very good. • Sm all glass package MHD enables easy mounting and high reliability.
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1SS286
20jiA
1SS286
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Hitachi DSA002712
Abstract: 1SS286
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
ADE-208-302A
1SS286
DO-34
Hitachi DSA002712
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1SS286
Abstract: GRZZ0002ZC-A
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0300 Rev.3.00 May 24, 2007 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package MHD enables easy mounting and high reliability.
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1SS286
REJ03G0142-0300
GRZZ0002ZC-A
REJ03G0142-0300
1SS286
GRZZ0002ZC-A
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SMD MARKING E1
Abstract: BAT960
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability PIN DESCRIPTION • Very low forward voltage
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M3D744
BAT960
MHC31mail
SCA74
613514/01/pp8
SMD MARKING E1
BAT960
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1SS286
Abstract: diode hitachi schottky DSA003641
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
ADE-208-302A
1SS286
diode hitachi schottky
DSA003641
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Untitled
Abstract: No abstract text available
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI A DE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
DE-208-302A
200pF,
DO-34
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PDF
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1SS286
Abstract: No abstract text available
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0200Z Previous: ADE-208-302A Rev.2.00 Nov.10.2003 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
REJ03G0142-0200Z
ADE-208-302A)
1SS286
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1SS286
Abstract: "1SS286" band switching diode Hitachi DSA0014
Text: ADE-208-302 Z 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Rev. 0 Dec. 1994 Features Outline 7 • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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ADE-208-302
1SS286
DO-34
1SS286
"1SS286"
band switching diode
Hitachi DSA0014
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JESD51-5
Abstract: JESD51-7 JESD-51-7
Text: Central CTLSH1-40M621H Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile 0.4mm , low VF Schottky diode in a small, thermal efficient,
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CTLSH1-40M621H
CTLSH1-40M621H
TLM621H
500mA,
JESD51-5
JESD51-7.
JESD51-7
JESD-51-7
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very low reverse current
Abstract: ultra low forward voltage diode
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Guard ring protected • Ultra small SMD package. Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes
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1SS06AWT
OD-523
very low reverse current
ultra low forward voltage diode
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Untitled
Abstract: No abstract text available
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes
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1SS06AWT
OD-523
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Untitled
Abstract: No abstract text available
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes
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1SS06AWT
OD-523
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JESD51-5
Abstract: No abstract text available
Text: Central CTLSH1-40M621H SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULETM LOW VF TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile 0.4mm , low VF Schottky diode in a small, thermal efficient,
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CTLSH1-40M621H
TLM621H
500mA,
JESD51-5
JESD51-7.
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LBAT60BT1
Abstract: No abstract text available
Text: Silicon Schottky Diode LBAT60BT1 High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA ●For power supply applications ●For clamping and protection in low voltage applications ● For detection and step-up-conversion ●
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LBAT60BT1
OD323
LBAT60BT1
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FR4 substrate
Abstract: DEVICE MARKING CODE X1 ex03 AP2001 J-STD-020A SBM4150-13 SBM41 fr 4 substrate
Text: SBM4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 ADVANCE INFORMATION Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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SBM4150
SBM4150-13
5000/Tape
com/datasheets/ap02007
FR4 substrate
DEVICE MARKING CODE X1
ex03
AP2001
J-STD-020A
SBM4150-13
SBM41
fr 4 substrate
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smd code marking book
Abstract: diode SMD MARKING CODE S
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Ultra small SMD package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 J Applications • Ultra high-speed switching • Voltage clamping • Protection circuits
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1SS06AWT
OD-523
OD-523
smd code marking book
diode SMD MARKING CODE S
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BAT60B
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
100ms
Jun-15-2004
BAT60B
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BAR63-03W
Abstract: BAT60B
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
BAR63-03W
BAT60B
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28c10
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
28c10
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
E6327
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SS2040
Abstract: SS2040FL MARKING CODE GP
Text: SS2040FL 2A/40V ULTRA-LOW VF SURFACE MOUNT SCHOTTKY DIODE These ultra-efficient, low VF Schottky diodes feature high current capability, while housed in a very small SOD-123 Flat Lead package. They are ideal for applications requiring maximum power dissipation per
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SS2040FL
A/40V
OD-123
OD-123FL
SS2040FL
T/R13
SS2040
MARKING CODE GP
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Untitled
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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MBRM5100H
MIL-STD-202,
com/datasheets/ap02001
DS30378
MBRM5100H-13
5000/Tape
com/datasheets/ap02007
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