smd schottky diode 82
Abstract: bta85 very low reverse current BTA8 smd marking BAT854AW BAT854CW BAT854SW BAT854W marking 81
Text: Diodes SMD Type Schottky barrier double diodes BAT854W;BAT854AW BAT854CW;BAT854SW Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Max Unit Continuous reverse voltage
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BAT854W
BAT854AW
BAT854CW
BAT854SW
BTA854W
BAT854CW
smd schottky diode 82
bta85
very low reverse current
BTA8
smd marking
BAT854AW
BAT854SW
marking 81
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BYW178
Abstract: No abstract text available
Text: BYW178 TELEFUNKEN Semiconductors Very Fast Silicon Mesa Rectifier Features D Glass passivated junction D Hermetically sealed package D Low reverse current D Soft recovery characteristics D Very fast reverse recovery time D Low reverse recovery peak current
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BYW178
D-74025
BYW178
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BYW178
Abstract: Pc 9571
Text: BYW178 Vishay Telefunken Very Fast Silicon Mesa Rectifier Features D D D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Very fast reverse recovery time Low reverse recovery peak current Applications
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BYW178
D-74025
24-Jun-98
BYW178
Pc 9571
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Untitled
Abstract: No abstract text available
Text: Product specification BAT854W;BAT854AW BAT854CW;BAT854SW Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Max Unit Continuous reverse voltage Parameter Symbol VR 40 V Continuous forward current
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BAT854W
BAT854AW
BAT854CW
BAT854SW
BTA854W
BAT854CW
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12PI1000
Abstract: 12pi1
Text: BYT 12PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 7pF Insulating voltage 2500 VRMS A ABSOLUTE MAXIMUM RATINGS Symbol
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12PI-1000
O220AC
12PI1000
12pi1
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diode byt 30PI1000
Abstract: No abstract text available
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K Isolated DOP3I Plastic
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30PI-1000
diode byt 30PI1000
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Untitled
Abstract: No abstract text available
Text: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case SOD93 Plastic SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS
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30P-1000
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diode byt 30PI1000
Abstract: BYT 30PI-1000 30PI100
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K Isolated DOP3I Plastic
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30PI-1000
diode byt 30PI1000
BYT 30PI-1000
30PI100
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BYT 30P-1000
Abstract: BYT 45 J 30P10
Text: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case SOD93 Plastic SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS
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30P-1000
BYT 30P-1000
BYT 45 J
30P10
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Untitled
Abstract: No abstract text available
Text: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case SOD93 Plastic SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS
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30P-1000
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30P10
Abstract: 2A marking
Text: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case SOD93 Plastic SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS
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30P-1000
30P10
2A marking
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Untitled
Abstract: No abstract text available
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K Isolated DOP3I Plastic SUITABLE APPLICATIONS
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30PI-1000
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diode byt 30PI1000
Abstract: BYT 30PI-1000 diode byt 45 BYT 45
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K Isolated DOP3I Plastic SUITABLE APPLICATIONS
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30PI-1000
diode byt 30PI1000
BYT 30PI-1000
diode byt 45
BYT 45
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BYT 45 J
Abstract: diode byt 45
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K e t le SUITABLE APPLICATIONS
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30PI-1000
BYT 45 J
diode byt 45
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BZX55C
Abstract: No abstract text available
Text: BZX55C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications 94 9367 Voltage stabilization
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BZX55C.
D-74025
BZX55C
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Untitled
Abstract: No abstract text available
Text: BZT55-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 9612009 Applications Voltage stabilization
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BZT55-Series
OD-80
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: _ TZMC. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications
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300K/W
01-Apr-99
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bzx55b
Abstract: 85604
Text: viSHAY _ BZX55B. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Low noise • Very high stability • Available with tighter tolerances
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BZX55B.
-Apr-99
01-Apr-99
bzx55b
85604
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Untitled
Abstract: No abstract text available
Text: viSHAY Vishay Telefu nken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances
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BZT55C.
300K/W
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: BYW178 Vishay Telefunken Very Fast Silicon Mesa Rectifier Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics • Very fa st reverse recovery tim e • Low reverse recovery peak current
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BYW178
D-74025
24-Jun-98
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TZX18B
Abstract: TZX 16 C
Text: TZX._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications Voltage stabilization
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200mz
01-Apr-99
TZX18B
TZX 16 C
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Untitled
Abstract: No abstract text available
Text: BZX55C-_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications Voltage stabilization
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BZX55C-_
01-Apr-99
BZX55C.
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Q7080
Abstract: TZX18
Text: VtSMAY ▼ T Z X . . Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances
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D-74025
01-Apr-99
Q7080
TZX18
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Untitled
Abstract: No abstract text available
Text: BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME Insulating voltage 2500 V rsm ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance 15pF Isolated DOP3I
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30PI-1000
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