Nais VF-8E
Abstract: nais VF-8X nais inverter inverter nais VF-8X vf-8x VF-8E vf-8x setting nais inverter vf-8e vf-8x parameter 486DX4 100MHz betters Pentium
Text: Software Motion Control Ver. 2.0 The configuration software for Matsushita inverters NAiS Motion Control is the parameter setting software from Matsushita that allows for integrated communication with all inverters which are equipped with RS232C or RS485 serial communication interfaces, including the Matsushita inverters VF-8E, VF-8X and VF-CE.
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RS232C
RS485
486DX4
100MHz
133MHz,
640x480
800x600)
Nais VF-8E
nais VF-8X
nais inverter
inverter nais VF-8X
vf-8x
VF-8E
vf-8x setting
nais inverter vf-8e
vf-8x parameter
486DX4 100MHz betters Pentium
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PDF
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nais inverter vf c operation manual
Abstract: nais VF-8X regenerative braking manual vf-8x inverter nais VF-8X 37KW motor wiring diagram FORWARD REVERSE 3 PHASE MOTOR 3 wiring control diagram with run and jog features 3 phase regenerative braking nais inverter VF-8X
Text: VF-8X Series Extremely reliable, powerful and quiet inverters • Frequency Skip Feature: Vibrations resulting from resonance with associated facilities are prevented by skipping resonant frequencies. Up to three frequencies can be skipped, and the skip frequency span can be adjusted by the user.
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Original
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11-37kw
nais inverter vf c operation manual
nais VF-8X
regenerative braking
manual vf-8x
inverter nais VF-8X
37KW motor wiring diagram
FORWARD REVERSE 3 PHASE MOTOR 3 wiring control diagram with run and jog features
3 phase regenerative braking
nais inverter
VF-8X
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PDF
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R0400
Abstract: No abstract text available
Text: SHEET 1 OF 1 RED LED 17.10 [.673 in] PARAMETERS 3.60 [.142 in] POWER DISSIPATION RED LED AVE FORWARD CURRENT PEAK FORWARD CURRENT 12.30 [.484 in] FORWARD VOLTAGE REVERSE VOLTAGE 5.00 [.197 in] GREEN LED REVERSE CURRENT n3.90 [.154 in] 5.20 [.205 in] ISOMETRIC
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120mA
240mW
5501MBLKREDGRN
XR0104P
R0400
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PDF
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Untitled
Abstract: No abstract text available
Text: SHEET 1 OF 1 YELLOW LED 17.10 [.673 in] PARAMETERS 3.60 [.142 in] POWER DISSIPATION YELLOW LED AVE FORWARD CURRENT PEAK FORWARD CURRENT 12.30 [.484 in] FORWARD VOLTAGE REVERSE VOLTAGE 5.00 [.197 in] GREEN LED REVERSE CURRENT n3.90 [.154 in] 5.20 [.205 in]
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5501MBLKYELGRN
XR0242P
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PDF
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5231B diode
Abstract: 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B MMBZ5226B MMBZ5257B 5235b
Text: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature
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MMBZ5226B
MMBZ5257B
OT-23
5231B diode
5251B
MARK 8E diode
mark 8m sot-23
5237B
5233B
5228B
5235b
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PDF
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Untitled
Abstract: No abstract text available
Text: AFBR-3905xxRZ High Voltage Galvanic Insulation Link for DC to 5MBaud Data Sheet Description Features Avago Technologies' AFBR-3905xxZ is a high voltage galvanic insulation link for DC to 5MBaud. The AFBR-3905xxZ consists of an optical transmitter and receiver operating at
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AFBR-3905xxRZ
AFBR-3905xxZ
AFBR-3905xxZ
650nm
IEC-60747-5-5
AFBR-390575RZ
AFBR-390500RZ
AFBR-3905xxRZ
AV02-4872EN
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PDF
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NUP8011MUTAG
Abstract: NUP8011MU
Text: NUP8011MU Low Capacitance Transient Voltage Suppressor Array This integrated transient voltage suppressor device TVS is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers,
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NUP8011MU
IEC61000-aws
NUP8011MU/D
NUP8011MUTAG
NUP8011MU
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PDF
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EIA-541
Abstract: IRF7807D1 IRF7353D2PBF
Text: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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Original
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5215A
IRF7353D2PbF
EIA-481
EIA-541.
EIA-541
IRF7807D1
IRF7353D2PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: NUP8011MU Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage Array This integrated transient voltage suppressor device TVS is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers,
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Original
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NUP8011MU
NUP8011MU/D
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PDF
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EIA-541
Abstract: IRF7353D1 IRF7807D1 MARKING CODE SO-8
Text: PD - 91802C IRF7353D1 FETKYä MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description l A A S
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Original
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91802C
IRF7353D1
EIA-481
EIA-541.
EIA-541
IRF7353D1
IRF7807D1
MARKING CODE SO-8
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95251 IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A A
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Original
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IRF7353D1PbF
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91802C IRF7353D1 FETKYä MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description l A A S
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Original
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91802C
IRF7353D1
EIA-481
EIA-541.
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PDF
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IRF7321D2
Abstract: No abstract text available
Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2
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Original
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91667D
IRF7321D2
EIA-481
EIA-541.
IRF7321D2
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1
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3809A
IRF7353D2
EIA-481
EIA-541.
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PDF
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laptop lcd cable 30 pin diagram
Abstract: NUP8011MU NUP8011MUTAG
Text: NUP8011MU Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage Array This integrated transient voltage suppressor device TVS is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers,
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Original
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NUP8011MU
NUP8011MU/D
laptop lcd cable 30 pin diagram
NUP8011MU
NUP8011MUTAG
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PDF
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EIA-541
Abstract: IRF7807D1
Text: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A
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Original
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5251A
IRF7353D1PbF
EIA-481
EIA-541.
EIA-541
IRF7807D1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A
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Original
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5251A
IRF7353D1PbF
EIA-481
EIA-541.
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PDF
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XTR1N0400
Abstract: No abstract text available
Text: XTRM Series XTR1N0400 IE W HIGH-TEMPERATURE, 40V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 55V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0415: IF=320mA per diode. o XTR1N0450: IF=1150mA per diode.
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XTR1N0400
XTR1N0415:
320mA
XTR1N0450:
1150mA
725mV
715mV
XTR1N0400
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PDF
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XTR1N0850
Abstract: XTR1N0800 XTR1N0815-BD
Text: XTRM Series XTR1N0800 IE W HIGH-TEMPERATURE, 80V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 90V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0815: IF=165mA per diode. o XTR1N0850: IF=570mA per diode.
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XTR1N0800
XTR1N0815:
165mA
XTR1N0850:
570mA
740mV
720mV
XTR1N0800
XTR1N0850
XTR1N0815-BD
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PDF
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IRF7807D1
Abstract: No abstract text available
Text: PD - 95297 IRF7321D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode
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Original
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IRF7321D2PbF
EIA-481
EIA-541.
IRF7807D1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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Original
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5215A
IRF7353D2PbF
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2
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Original
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91667D
IRF7321D2
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95215 IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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Original
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IRF7353D2PbF
EIA-481
EIA-541.
IRF7353D2PbF
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PDF
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Untitled
Abstract: No abstract text available
Text: Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C Value Units
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OCR Scan
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MMBZ5226B
MMBZ5257B
SG113G
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PDF
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