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    VGS12 Search Results

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    VGS12 Price and Stock

    Microchip Technology Inc TSPC603RVGS12LC

    IC MPU 603E 266MHZ 255CICBGA
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    DigiKey TSPC603RVGS12LC Tray 60
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    United Chemi-Con Inc E82D251VGS122AA80U

    CAP ALUM SNAP-IN GEN PUR 85C
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    DigiKey E82D251VGS122AA80U Bulk 100
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    United Chemi-Con Inc E82D630VGS123MA63U

    CAP ALUM SNAP-IN GEN PUR 85C
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    DigiKey E82D630VGS123MA63U Bulk 100
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    United Chemi-Con Inc E82D251VGS122MA63U

    CAP ALUM SNAP-IN GEN PUR 85C
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    DigiKey E82D251VGS122MA63U Bulk 100
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    Master Electronics E82D251VGS122MA63U
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    Infineon Technologies AG MB91243PFV-GS-123E1

    IC MCU 144LQFP
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    VGS12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted


    Original     		PDF LS5905 LS5906 LS5907 LS5908 LS5909 150fA 500mW 25-year-old,

    Untitled

    Abstract: No abstract text available
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71


    Original     		PDF LS843 LS844 LS845 OT-23 400mW 25-year-old,

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


    Original     		PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    Untitled

    Abstract: No abstract text available
    Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)


    Original     		PDF LS/3N165, LS/3N166 LS3N165, LS3N166 3N165, 3N166 3N165 25-year-old, 3N165

    Untitled

    Abstract: No abstract text available
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		PDF 3N190 3N191 3N190 300mW 525mW 25-year-old,

    ultra low igss pA

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old, ultra low igss pA

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    3N165

    Abstract: 3N166
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 300ms. 3N165 3N166

    LSK186

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old, LSK186

    Untitled

    Abstract: No abstract text available
    Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted


    Original     		PDF LS840 LS841 LS842 O-71/78 400mW 25-year-old,

    20-28GHz

    Abstract: No abstract text available
    Text: CHA2092a 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


    Original     		PDF CHA2092a 18-32GHz CHA2092 18-32GHz 10dBm DSCHA20929025 20-28GHz

    3N165

    Abstract: 3N166 3N170 X3N165-66
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		PDF 3N165 3N166 3N165. 3N166. 100MHz 3N165 -55oC 3N170 300ms. DS018 3N166 X3N165-66

    LVG3131-PF

    Abstract: No abstract text available
    Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA93B/VG-S12-PF DATA SHEET DOC. NO : QW0905-L A93B/VG-S12-PF REV : A DATE : 27 - Oct. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. L A93B/VG-S12-PF


    Original     		PDF LA93B/VG-S12-PF QW0905-L A93B/VG-S12-PF 54TYP LVG3131-PF MIL-STD-202: MIL-STD-750: LVG3131-PF

    3N190

    Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    Original     		PDF 3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oC 125oC 3N188 3N190-91 3N191 X3N190-91 C2506

    ultra low Ciss jfet

    Abstract: Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice LS3954 J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112
    Text: LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW LEAKAGE IG = 20pA TYP. LOW NOISE en= 10nV/√Hz TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS3954A LS3954 LS3955 LS3956 LS3958 10nV/Hz 400mW ultra low Ciss jfet Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112

    2SK389

    Abstract: lsk170 LSK389B 2SK389 equivalent LSK389 equivalent dss2 LSK389 LSK389C LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 2SK389 2SK389 lsk170 LSK389B 2SK389 equivalent LSK389 equivalent dss2 LSK389 LSK389C LSK389A

    Untitled

    Abstract: No abstract text available
    Text: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT I VGS1-2/ T =5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted


    Original     		PDF LS5905 LS5906 LS5907 LS5908 LS5909 150fA 500mW 25-year-old,

    U421 jfet

    Abstract: No abstract text available
    Text: U421, U422, U423, U424, U425, U426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µS MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted)


    Original     		PDF 25-year-old, U421 jfet

    Untitled

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old,

    ALD1101MA

    Abstract: 1101a 1101B
    Text: ADVANCED LINEAR DEVICES I " m \ S3E D • DESbQfi3 D000211 5^1 ■ A dvanced |/L J A LD 1101A /A L D 1101B /A L D 1101 d e vices D U A L N -C H A N N EL M A TCH ED M O S F E T P AIR GENERAL DESCRIPTION \ PIN CONFIGURATION The ALD 1101 is a monolithic dual N-channel matched transistor pair


    OCR Scan     		PDF DGG0211 ALD1101A/ALD1101B/ALD1101 ALD1101MA 1101a 1101B

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F9012 VGS12V 1110AvenidaAcaso, 72mOCH D0D0273

    3N188

    Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
    Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified


    OCR Scan     		PDF 00G03SM 3N188-3N191 3N188, 3N189 3N190, 3N191 10sec) -500nA, -500pA -500HA, 3N188 X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191