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    VISHAY MARKING RG SMA Search Results

    VISHAY MARKING RG SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-174SMAX200-007 Amphenol Cables on Demand Amphenol CO-174SMAX200-007 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 7ft Datasheet
    CO-316SMAX200-004 Amphenol Cables on Demand Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft Datasheet
    CO-174SMAX200-003 Amphenol Cables on Demand Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet

    VISHAY MARKING RG SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB17N60K, SiHFB17N60K O-220 O-220 IRFB17N60KPbF SiHFB17N60K-E3 12-Mar-07

    IRFB17N60K

    Abstract: SiHFB17N60K SiHFB17N60K-E3
    Text: IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB17N60K, SiHFB17N60K O-220 O-220 18-Jul-08 IRFB17N60K SiHFB17N60K-E3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA408DJ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 4.5 0.039 at VGS = 4.5 V 4.5 VDS (V) 30 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package - Small Footprint Area


    Original     		PDF SiA408DJ SC-70-6L-Single SiA408DJ-T1-E3 08-Apr-05

    Si5483DU-T1-E3

    Abstract: si5483
    Text: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area


    Original     		PDF Si5483DU 18-Jul-08 Si5483DU-T1-E3 si5483

    Untitled

    Abstract: No abstract text available
    Text: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area


    Original     		PDF Si5483DU Si5483DU-T1-E3 08-Apr-05

    74592

    Abstract: 74592 datasheet SC-70-6 SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes
    Text: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA511DJ SC-70 SC-70-6 18-Jul-08 74592 74592 datasheet SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes

    BC846

    Abstract: BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859
    Text: BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1 = Base


    Original     		PDF BC846 BC849 O-236AB OT-23) OT-23 E8/10K 30K/box BC846A BC847A BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859

    SiA511DJ-T1-GE3

    Abstract: SC-70-6 sia511dj "MARKING CODE G2"
    Text: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA511DJ SC-70 SC-70-6 08-Apr-05 SiA511DJ-T1-GE3 "MARKING CODE G2"

    Si2327DS

    Abstract: No abstract text available
    Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2327DS O-236 OT-23) 08-Apr-05

    pin configuration NPN transistor BC558

    Abstract: pin configuration pnp transistor BC558 BC558 SOT-23 transistor BC558 BC558 BC846 BC849 BC856 BC856A BC857
    Text: BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors PNP Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) 0.035 (0.9) .122 (3.1) .110 (2.8) .016 (0.4) .056 (1.43) .052 (1.33) 3 .016 (0.4) Dimensions in inches and (millimeters)


    Original     		PDF BC856 BC859 O-236AB OT-23) OT-23 E8/10K 30K/box BC856A BC858A pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC558 SOT-23 transistor BC558 BC558 BC846 BC849 BC856A BC857

    Si1411DH

    Abstract: RthJA
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 18-Jul-08 RthJA

    Si2325DS

    Abstract: MS1117
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2325DS O-236 OT-23) 18-Jul-08 MS1117

    SiA483DJ

    Abstract: D 2394 SIA483DJ-T1-GE3
    Text: New Product SiA483DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.021at VGS = - 10 V - 12a 0.030 at VGS = - 4.5 V - 12a Qg (Typ.) 21 nC PowerPAK SC-70-6L-Single 1 APPLICATIONS D • Smart Phones, Tablet PCs, Mobile Computing:


    Original     		PDF SiA483DJ 021at SC-70 SC-70-6L-Single SiA483DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A D 2394

    Si1419DH

    Abstract: 50368
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1419DH SC-70 OT-363 Si1419DH-T1--E3 18-Jul-08 50368

    Untitled

    Abstract: No abstract text available
    Text: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA400EDJ SC-70 SC-70-6L-Single SiA400EDJ-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    bc857

    Abstract: tsb200 BC558 Transistors
    Text: BC856 to BC859 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups


    Original     		PDF BC856 BC859 BC857, BC558 BC859 BC849 BC846. OT-23 bc857 tsb200 BC558 Transistors

    BC558

    Abstract: BC846 BC849 BC856 BC856A BC856B BC857 BC858A BC858B BC859
    Text: BC856 to BC859 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups


    Original     		PDF BC856 BC859 BC857, BC558 BC859 BC849 BC846. OT-23 BC846 BC856A BC856B BC857 BC858A BC858B

    Si1411DH

    Abstract: marking code G SI1411DH-T1-E3
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 08-Apr-05 marking code G SI1411DH-T1-E3

    Si2325DS

    Abstract: No abstract text available
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2325DS O-236 OT-23) 08-Apr-05

    Si1419DH

    Abstract: No abstract text available
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1419DH SC-70 OT-363 Si1419DH-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/96/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 18-Jul-08

    Si1411DH

    Abstract: No abstract text available
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 S-50461--Rev. 14-Mar-05

    Si1419DH

    Abstract: No abstract text available
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1419DH SC-70 OT-363 Si1419DH-T1--E3 S-50368--Rev. 28-Feb-05

    73240

    Abstract: Si2327DS
    Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2327DS O-236 OT-23) 70ycle S-42448--Rev. 10-Jan-05 73240