VK200 RFC Search Results

vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

MRF156R

Abstract: MRF156 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD

175mhz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •

MRF148A

Abstract: mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER
Contextual Info: Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

RF TRANSFORMER 2 UH

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD

VK200 rfc

Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Contextual Info: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

rfc vk200

Abstract: SD1012
Contextual Info: 04C D J L j ^ l L 37 S G S-THOMSON IT '7 ? ~ P 7 0000015 ^ I SOLID $TAtE MIÇROWAVE SD1012-4 ! ^THOMSON-CSF COMPONENTS CORPORATION r j:Mont^pmVvviÎÎè^PAX8^36 • C2fSt 362-85QÓ Ì« TWX Slb:66r^729St^ 7.5 VOLT VHF COMMUNICATIONS TRANSISTOR DESCRIPI10N

MRF166 211-07

Abstract: motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820
Contextual Info: MOTOROLA Order this document by MRF166/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166 MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500

vk200 choke

Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

SD1088

Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
Contextual Info: s G S - T H O M S O N OMC 0 | 7^ 53? aGOOGEl 4 | ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at

VK200 rfc

Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
Contextual Info: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION

mrf150

Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

VK200-20

Abstract: VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier
Contextual Info: MOTOROLA Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

MRFC572

Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain

MRF148A

Abstract: 2204B J101 VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

Contextual Info: SCS-THOMSON * 7 / SD1477 D ü flK ê œ iL iiig T n s iiD Ê i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . 175 MHz » 12.5 VOLTS • COMMON EMITTER ■ P out = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon

SD1477

Abstract: arco arco 462 vk200 M111
Contextual Info: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER P OUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon

SD1477

Abstract: vk200 M111
Contextual Info: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon

vk200 RFC

Abstract: thomson microwave transistor sd1234
Contextual Info: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R

VK200 rfc

Abstract: SD1410 SD-1410
Contextual Info: G S-THOMSON GSC D | 7 ^ 2 3 7 □ÜGQ1 7b T SOLID STATE MICROWAVE SD1410-1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville,.PA 18936» {215} 362-8500 • TWX 510-66Î-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1410-1 is a 12 volt epitaxial silicon NPN planar