logic pulser specifications
Abstract: VN1304N3 TN0102N3 logic pulser 100v 500ma diode TP0102N3 zener diode 15v switch 100mA 100V high speed Zener Diode 200v high voltage diodes
Text: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.
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Original
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VN/VP13
-100V
VP0650N3
TN0102N3
VN1304N3
VP1304N3
TP0102N3
TN0620N3
logic pulser specifications
VN1304N3
TN0102N3
logic pulser
100v 500ma diode
TP0102N3
zener diode 15v
switch 100mA 100V
high speed Zener Diode 200v
high voltage diodes
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logic pulser specifications
Abstract: VP1306N3 logic pulser
Text: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.
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Original
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VN/VP13
-100V
TN0620N3
VN1306N3
TN0104N3
VP1306N3
VP0550N3
TP0102N3
logic pulser specifications
VP1306N3
logic pulser
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TN0102N3
Abstract: VN1304N3 logic pulser specifications VP1304N3 TN0620N3 TP0102N3 TP0620N3
Text: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.
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Original
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VN/VP13
-100V
TN0102N3
VN1304N3
VP1304N3
TP0102N3
TN0620N3
TN0102N3
VN1304N3
logic pulser specifications
VP1304N3
TN0620N3
TP0102N3
TP0620N3
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VP1306N3
Abstract: TP0102N3 equal transistors TP0620N3 pulser high voltage pulser vp13 TN0620N3 logic pulser TN0104N3
Text: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.
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Original
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VN/VP13
-100V
TN0104N3
VP1306N3
VP0550N3
VN1306N3
TP0102N3
VP1306N3
TP0102N3
equal transistors
TP0620N3
pulser
high voltage pulser
vp13
TN0620N3
logic pulser
TN0104N3
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT AD CE FO RM AT NN AV DA VN AN C EI NI N FO RM A ITOI O Product Summary V BR DSS • • • • • • • • • • ID max RDS(ON) max TA = 25°C 0.99Ω @ VGS = 4.5V
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Original
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DMN21D2UFB
760mA
700mA
500mA
350mA
DS35564
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Untitled
Abstract: No abstract text available
Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .
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OCR Scan
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B14N04/K14N04FM
VNP14N04FI/VNV14N04
VNP14N
O-263
VNB14N04,
VNK14N04FM,
VNP14N04FI
VNV14N04
14N04FI-VNV14N04
PowerSO-10
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PDF
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VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07
Abstract: 10n07 VNP10N
Text: ¿5 7 TY P E VNB10N07 VNK10N07FM VNP10N 07FI VNV10N07 S G S -T H O M S O N VN B 10N07/K 10N07FM :LICTIB@10 i VN P10N07FI/VN V10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET RDS on Vciamp 70 70 70 70 V V V V 0.1 n 0.1 n 0.1 n 0.1 a lllm 10 10 10 10
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OCR Scan
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VNB10N07
VNK10N07FM
VNP10N
VNV10N07
VNB10N07,
VNK10N07FM,
VNP10N07FI
VNV10N07
VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07
10n07
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Untitled
Abstract: No abstract text available
Text: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION
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OCR Scan
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B10N07/K10N07FM
VNP10N07FI/VNV10N07
O-263
VNB10N07,
VNK10N07FM,
VNP10N07FI
VNV10N07
Vertical10N07FI-VNV10N07
PowerSO-10
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PDF
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Untitled
Abstract: No abstract text available
Text: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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OCR Scan
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VNP49N04FI
VNB49N04
VNV49N04
VNP49N
VNP49N04FI,
VNB49N04,
VNV49N04
O-263
PowerSO-10â
VNP49N04FI
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PDF
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50n04
Abstract: SGS-Thomson mosfet
Text: £S 7 SGS-THOMSON * 7# VN H 50N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T A R G E T DATA TYPE VN H 50N 04 • ■ ■ . ■ . ■ ■ > . Vclamp 40 V R d S o ii 0 .0 1 2 n him 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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O-218
O-218
VNH50N04
50n04
SGS-Thomson mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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OCR Scan
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VNP28N04FI
VNB28N04/VNV28N04
VNP28N
VNP28N04FI,
VNB28N04
VNV28N04
MOSFETSNB28N04-VNV28N04
PowerSO-10
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PDF
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10N06
Abstract: D10N06 diode gc6
Text: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 VND10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp
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OCR Scan
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10N06
VND10N06-1
10N06FM
VND10N06,
VND10N06-1,
VNP10N06FI
VNK10N06FM
D10N06
diode gc6
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PDF
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n713
Abstract: vnp49n
Text: •THOMSON VNP49N04FI MOfôlSLl&rmfflDCS VNB49N04/VNV49N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp VNP49N 04FI VNB49N04 VN V49N 04 42 V 42 V 42 V R d S< o i i 0.02 Q 0.02 Cl 0.02 £2 lllm 49 A 49 A 49 A . . . . . LINEAR CURRENT LIMITATION
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OCR Scan
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VNP49N
VNB49N04/VNV49N04
VNB49N04
VNP49N04FI,
VNV49N04
n713
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PDF
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J237
Abstract: VNK10N06 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON
Text: £ÿj SCS-THOMSON lœ iILIC TK O K liei V N K 10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ADVANCE DATA TYPE VN K 10N 06 . . . . . . . . . Vclamp RDS on llim 60 V 0 .15 £2 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNK10N06
VNK10N06
SC07650
10/xs,
SC07660
00770n
OT-82
J237
AUTOPROTECTED POWER MOSFET
3.2 zener diode OF SGS-THOMSON
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PDF
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SGS-Thomson mosfet
Abstract: No abstract text available
Text: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNH100N04
O-218
O-218
VNH100N04
SGS-Thomson mosfet
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PDF
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0610L
Abstract: 2222l 10kls VN10KLS
Text: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V
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OCR Scan
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VN0610L,
VN10KE/KLS,
VN2222L
0610L
10KLS
2222L
VN2222L_
O-226AA)
VN10KLS
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PDF
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Untitled
Abstract: No abstract text available
Text: e r SCS-THOMCON "* 1 Ê M SÜ iilLIC T M liiei VNH70N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G ET DATA TYPE VN H 70N 07 . . . . . . . . • . Vclamp 70 V R0S on 0 .0 1 5 n lllm 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNH70N07
O-218
O-218
VNH70N07
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PDF
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2222ll
Abstract: 10LLS ST C 236 DIODE 0605T
Text: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5
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OCR Scan
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VN10LE/LLS,
VN0605T,
VN0610LL,
VN2222LL
10LLS
0605T
0610LL
2222LL
S-58620--
21-Jun-99
ST C 236 DIODE
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PDF
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amperex LTA320
Abstract: Amperex LTA-320 LTA320 LTA-320
Text: LINEAR SYSTEMS LS320 MONOLITHIC BI-FET AMPLIFIER FEATURES * * * * * * DIRECT REPLACEMENT FOR AMPEREX LTA-320 HIGH INPUT RESISTANCE Rgs=100 Gohts min HIGH GAIN (Yfs=30,000 umhos Bin) LOW NOISE (Vn=25 uV typ) ADDITIONAL SCREENING AVAILABLE AVAILABLE IN: DIE FORM, TO-71, TO-92, SOIC
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OCR Scan
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LS320
LTA-320
LISIS007
100uA,
15kHz
amperex LTA320
Amperex LTA-320
LTA320
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PDF
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vniokm
Abstract: MOSFET VN2222L
Text: VN0610L, VNIOKE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number r DS on Max (Q) VGS(th)iV) Id (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VNÎ0KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V 0.8 to 2.5
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OCR Scan
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VN0610L,
VN2222L
VN0610L
VN2222L
O-206AC
S-52426--Rev.
14-Apr-97
VN10KE/M/T,
vniokm
MOSFET VN2222L
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PDF
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kn2000
Abstract: VNH50N04
Text: Æ T S G S -T H O M S O N lerasmLHCTMDei V N H 5 0 N04 "OMNIFET”: FULLY AUTQPROTECTED POWER MOSFET TARGET DATA TYPE VN H 50N 04 . . . . . . . . . . Vclamp R D S o n him 40 V 0 .0 1 2 £2 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNH50N04
VNH50N04
O-218
O-218
OT-93)
7T2T237
DD770QT
kn2000
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PDF
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FZ 44 NS
Abstract: vn 300 T VNP5N07 mosfet vn 10 vnk5n07 SGS-Thomson mosfet ipak VN MOSFET D5N07-1
Text: SGS-THOMSON MDO^miCTIfMOlgl VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VN D 5N 07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V RDS on 0 .2 0 .2 0 .2 0 .2 a. Q. a. Q. 11im 5 5 5 5 A A A A . . . . . .
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OCR Scan
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VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
VND5N07
VNP5N07FI
VNK5N07FM
VND5N07,
VND5N07-1,
D5N07/VND5N07-1
FZ 44 NS
vn 300 T
VNP5N07
mosfet vn 10
vnk5n07
SGS-Thomson mosfet ipak
VN MOSFET
D5N07-1
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PDF
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FM15TF-9
Abstract: JRC 062 gun diode bias symbol JRC FF 30
Text: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A
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OCR Scan
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FM15TF-9,
E80276
E80271
FM15TF-9
JRC 062
gun diode bias symbol
JRC FF 30
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PDF
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100N04
Abstract: p 471 mosfet
Text: c ? SGS-IHOMSON • v # M€ra§ ilLiCTI3@ilû S VNW100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la m p R D S o n ) him VN W 100N 04 42 V 0 .0 1 2 n 100 A • . . ■ . ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNW100N04
O-247
VNW100N04
100N04
p 471 mosfet
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PDF
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