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    Panasonic Electronic Components ECE-A1VN100U

    CAP ALUM 10UF 20% 35V RADIAL TH
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    Panasonic Electronic Components ECE-A1VN100UB

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    Infineon Technologies AG FM24VN10-G

    IC FRAM 1MBIT I2C 3.4MHZ 8SOIC
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    NXP Semiconductors MCIMX6X2EVN10ABR

    IC MPU I.MX6SX 1GHZ 400MAPBGA
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    NXP Semiconductors MCIMX6L3EVN10AC

    IC MPU I.MX6SL 1.0GHZ 432MAPBGA
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    VN10 Datasheets (138)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    VN10001A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1000A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1000A Unknown FET Data Book Scan PDF
    VN1000A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1000A Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1000D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1000D Unknown FET Data Book Scan PDF
    VN1000D Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1000D Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1000D Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1001A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1001A Unknown FET Data Book Scan PDF
    VN1001A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1001A Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1001D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1001D Unknown FET Data Book Scan PDF
    VN1001D Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1001D Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN100A Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN100D Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    ...

    VN10 Datasheets Context Search

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    PDF

    VN10LFTA

    Abstract: VN10L
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C


    Original     		VN10LF 500mA 200mA 500mA 600mA ZVN3306F 522-VN10LFTA VN10LFTA VN10LFTA VN10L PDF

    vn10K

    Abstract: No abstract text available
    Text: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


    OCR Scan     		VN10K VN10KN9 VN10KN3 vn10K PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B V qqs R dS<ON max) 60V 5.0ÌÌ Order Number / Package If BV dss / TO-92 0.75A VN10KN3 Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan     		VN10K VN10KN3 PDF

    VN10KN

    Abstract: VN10KN9 vn10k
    Text: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices


    OCR Scan     		VN10KN9 VN10KN3 300ns, VN10K VN10KN vn10k PDF

    VN10K

    Abstract: No abstract text available
    Text: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		VN10K VN10K A022009 PDF

    VN10K

    Abstract: VN0106N3 VN10KN3-G sivn
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input


    Original     		VN10K DSFP-VN10K B031411 VN10K VN0106N3 VN10KN3-G sivn PDF

    10kls

    Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
    Text: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5


    Original     		VN0610L, VN10KLS, VN2222L VN0610L VN10KLS 08-Apr-05 10kls 0610L VN10KLS 2222L VN0610L VN2222L PDF

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J PDF

    Untitled

    Abstract: No abstract text available
    Text: un itti llll SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02±0.20 (0.04 ± 0.006) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE PIN 1 - Drain Underside View PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		VN10KCSM4 300ns PDF

    Untitled

    Abstract: No abstract text available
    Text: VN10K S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ R DS ON ^D(ON) BVdgs (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


    OCR Scan     		VN10K VN10KN9 VN10KN3 PDF

    VN0610L

    Abstract: TL032
    Text: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range


    OCR Scan     		VN0610L VN10KE/ VN10KM/ VN10KT OT-23 O-237 OT-23 150cC VN10KE TL032 PDF

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


    OCR Scan     		O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM PDF

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J PDF

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    OCR Scan     		vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD PDF

    Untitled

    Abstract: No abstract text available
    Text: Digital Vane Sensor VN1015 Sensors Magnetically activated digital vane sensor in a rugged, overmolded plastic housing with three pins or 3-wire flying leads Description The VN1015 sensors employ a Hall Effect digital vane sensor and a permanent magnet in two small towers, separated by a 3.4


    Original     		VN1015 PDF

    VN10LP

    Abstract: zvn330 ZVN3306A
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LP ISSUE 2 – NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT


    Original     		VN10LP ZVN3306A 500mA 200mA 600mA VN10LP zvn330 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET VN10LF ISSUE 2 - JANUARY 1996_ FEATURES * 60 Volt V DS * R DS,0n =5 ^ P A R T M A R K IN G D ETA IL - MY ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS 60


    OCR Scan     		VN10LF 300ns. ZVN3306F PDF

    MOSFET vn2222l

    Abstract: VN10KLS
    Text: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V


    Original     		VN0610L, VN10KE/KLS, VN2222L VN0610L VN10KE VN10KLS VN2222L O-226AA) S-58620--Rev. 21-Jun-99 MOSFET vn2222l PDF

    VN10lm

    Abstract: No abstract text available
    Text: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE


    OCR Scan     		VN061 O-226AA) VN0610LL VN10LM O-237 VNDS06 VN0610LL VN10lm PDF

    TO206AC

    Abstract: No abstract text available
    Text: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics


    OCR Scan     		VNDP06 O-206AC) O-226AA) O-237 VN10KE VN0610L, VN2222L VN10KM VNDP06 TO206AC PDF

    VN10KM

    Abstract: No abstract text available
    Text: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the


    OCR Scan     		VN0610L VN10KE VN10KM VN2222L VNDP06. PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 5.0Q. 0.75 A O rder N um ber / Package TO-92 VN10KN3 Features Advanced DMOS Technology □


    OCR Scan     		VN10K VN10KN3 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN10KM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)310m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		VN10KM PDF

    Untitled

    Abstract: No abstract text available
    Text: VN10LM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		VN10LM PDF