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    VOLTAGE 15V,COLLECTOR CURRENT 40MA Search Results

    VOLTAGE 15V,COLLECTOR CURRENT 40MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation

    VOLTAGE 15V,COLLECTOR CURRENT 40MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn 60V 600mw

    Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V


    Original     		PDF NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V

    NTE2672

    Abstract: VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp


    Original     		PDF NTE2672 100mA, NTE2672 VEBO-15V

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items


    Original     		PDF D-60528

    igbt 40A 600V

    Abstract: CA75
    Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items


    Original     		PDF D-60528 igbt 40A 600V CA75

    igbt 1200V 40A module

    Abstract: No abstract text available
    Text: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items


    Original     		PDF D-60528 igbt 1200V 40A module

    SGL40N150

    Abstract: No abstract text available
    Text: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150 SGL40N150 O-264

    SGH80N60UF

    Abstract: No abstract text available
    Text: IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGH80N60UF SGH80N60UF

    smd diode code T7

    Abstract: No abstract text available
    Text: ITH08F06 ITH08F06 High Speed Powerline N-Channel IGBT DS4988-3.0 May 1999 The ITH08F06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage applications such as power supplies and


    Original     		PDF ITH08F06 DS4988-3 ITH08F06 smd diode code T7

    induction heater

    Abstract: FGL40N150D induction heater for heating
    Text: IGBT FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.5 V @ IC = 40A


    Original     		PDF FGL40N150D FGL40N150D O-264 induction heater induction heater for heating

    SGL40N150

    Abstract: igbt 40a 600v
    Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150 SGL40N150 O-264 igbt 40a 600v

    fairchild Igbts

    Abstract: SGH80N60UF
    Text: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGH80N60UF fairchild Igbts SGH80N60UF

    induction heater

    Abstract: igbt 40A 600V SGL40N150D IGBT 600V 16
    Text: IGBT SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150D SGL40N150D O-264 induction heater igbt 40A 600V IGBT 600V 16

    Untitled

    Abstract: No abstract text available
    Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions Unit : mm Application Low frequency amplifier Driver TSMT3 1.0MAX Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)


    Original     		PDF 2SD2672 250mV

    Untitled

    Abstract: No abstract text available
    Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF80N60UF

    SGH80N60UF

    Abstract: SGH80N60
    Text: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGH80N60UF SGH80N60UF SGH80N60

    SGF80N60UF

    Abstract: No abstract text available
    Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF80N60UF SGF80N60UF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6


    Original     		PDF 2SD2672 250mV

    2SD2672

    Abstract: No abstract text available
    Text: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6


    Original     		PDF 2SD2672 250mV 50ipment 2SD2672

    SGH80N60UFD

    Abstract: No abstract text available
    Text: IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD seriesis designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGH80N60UFD SGH80N60UFD

    SGL40N150D

    Abstract: No abstract text available
    Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150D SGL40N150D O-264

    SGH80N60UFD

    Abstract: No abstract text available
    Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGH80N60UFD SGH80N60UFD

    SGH80N60UFD

    Abstract: No abstract text available
    Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGH80N60UFD SGH80N60UFD

    Untitled

    Abstract: No abstract text available
    Text: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGH80N60UFD

    FGL40N150D

    Abstract: No abstract text available
    Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A


    Original     		PDF FGL40N150D FGL40N150D O-264