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    VOLTAGE MARKING C32 Search Results

    VOLTAGE MARKING C32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    VOLTAGE MARKING C32 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100v 4p7

    Abstract: m3181 bz 103 c24 561 1kv 222 3KV 333 1kv 1N00 8121N 8P20 8171M
    Text: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. Example: 1000pF ±10% 50V 2X1 dielectric


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    1000pF 100pF 100pF 100v 4p7 m3181 bz 103 c24 561 1kv 222 3KV 333 1kv 1N00 8121N 8P20 8171M PDF

    8131M

    Abstract: 8123Z 100v 4p7 8133Z 8121N 1N00 8P20 y 683 8171M bp c01 100v 3p9
    Text: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. All moulded units are marked additionally with year and week of manufacture, and capacitance value on top of the unit.


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    1000pF 100pF 50/63V 8131M 8123Z 100v 4p7 8133Z 8121N 1N00 8P20 y 683 8171M bp c01 100v 3p9 PDF

    P6SBMJ24A

    Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current


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    A40CA 5SCMJ120CA 5SCMJ130CA 5SCMJ150CA 5SCMJ160CA 5SCMJ170CA 5SCMJ180CA 5SCMJ200CA P6SBMJ24A B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a PDF

    B14A equivalent

    Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse


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    11ACE TVSP05PT OT-23 LTVSJ12ESPT LTVSJ15ESPT SC-79 B14A equivalent zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A PDF

    ERJ3EKF1002V

    Abstract: PCMC104T-1R5MN NCP5215 erj-3ekf9100v ECJ1VB1H472K ECJ2FB1E105K PCMC104T-2R2MN A114 A115 JESD22
    Text: NCP5215 Dual Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM QFN40 MN SUFFIX CASE 488AR A WL YY WW G Features • Wide Input Voltage Range: 4.5 V to 24 V • Adjustable Output Voltage Range: 0.8 V to 3.0 V • Selectable Nominal Fixed Switching Frequency:


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    NCP5215 QFN40 488AR NCP5215/D ERJ3EKF1002V PCMC104T-1R5MN NCP5215 erj-3ekf9100v ECJ1VB1H472K ECJ2FB1E105K PCMC104T-2R2MN A114 A115 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: NCP5215 Dual Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM QFN40 MN SUFFIX CASE 488AR A WL YY WW G Features • Wide Input Voltage Range: 4.5 V to 24 V • Adjustable Output Voltage Range: 0.8 V to 3.0 V • Selectable Nominal Fixed Switching Frequency:


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    NCP5215 QFN40 488AR NCP5215/D PDF

    erj-3ekf9100v

    Abstract: No abstract text available
    Text: NCP5215 Dual Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM QFN40 MN SUFFIX CASE 488AR A WL YY WW G Features • Wide Input Voltage Range: 4.5 V to 24 V • Adjustable Output Voltage Range: 0.8 V to 3.0 V • Selectable Nominal Fixed Switching Frequency:


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    NCP5215 NCP5215, NCP5215/D erj-3ekf9100v PDF

    SOT-353

    Abstract: ic 353 datasheet ic 353 SC-88A footprint SC-88A JA NCP512 NCP512SQ13T1G SC70-5 SOT-353 MARKING vn SOT353-1 thermal resistance
    Text: NCP512 80 mA CMOS Low Iq Voltage Regulator http://onsemi.com MARKING DIAGRAM 5 1 SC70-5/SC-88A/ SOT-353 SQ SUFFIX CASE 419A M The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered


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    NCP512 SC70-5/SC-88A/ OT-353 NCP512 SC70-5 NCP512/D SOT-353 ic 353 datasheet ic 353 SC-88A footprint SC-88A JA NCP512SQ13T1G SC70-5 SOT-353 MARKING vn SOT353-1 thermal resistance PDF

    SOT-353 MARKING vn

    Abstract: NCP512 NCP512SQ13T1G SC70-5 SC88-A SOT-353 code vn
    Text: NCP512 80 mA CMOS Low Iq Voltage Regulator http://onsemi.com MARKING DIAGRAM 5 1 SC70-5/SC-88A/ SOT-353 SQ SUFFIX CASE 419A M The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered


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    NCP512 SC70-5/SC-88A/ OT-353 NCP512 SC70-5 NCP512/D SOT-353 MARKING vn NCP512SQ13T1G SC70-5 SC88-A SOT-353 code vn PDF

    transistor k74

    Abstract: transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k
    Text: IG N TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER P 40mW @5Msps, 150mW @ 50Msps P 2.5V supply voltage with 2.5V/3.3V compatiP P P P Temperature Range D Package Conditioning Marking TSA1201IF -40 C to +85 C TQFP48 Tray SA1201I TSA1201IFT -40 C to +85 C TQFP48


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    12-BIT, 50MSPS, 150mW 150mW 50Msps 15MHz TSA0801, transistor k74 transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k PDF

    smd diode a7

    Abstract: smd diode marking A7 SOT-23 BAV99N equivalent diode smd A7 SOT 23 BAV99N3 N3 smd
    Text: CYStech Electronics Corp. Spec. No. : C328N3 Issued Date : 2003.04.08 Revised Date : 2007.01.10 Page No. : 1/5 High –speed double diode BAV99N3 Description The BAV99N3 consists of two high-speed switching diodes connected in series, fabricated in planar


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    C328N3 BAV99N3 BAV99N3 OT-23 OT-23 450mA. UL94V-0 smd diode a7 smd diode marking A7 SOT-23 BAV99N equivalent diode smd A7 SOT 23 N3 smd PDF

    diode M5C

    Abstract: m5c diode M5C SOT CMBD7000N3 marking M5C sot-23 diode m5c VR50 N3 smd MARKING CODE M5C smd 5 pin marking
    Text: Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 1/5 CYStech Electronics Corp. High –speed double diode CMBD7000N3 Description The CMBD7000N3 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.


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    C329N3 CMBD7000N3 CMBD7000N3 OT-23 OT-23 UL94V-0 diode M5C m5c diode M5C SOT marking M5C sot-23 diode m5c VR50 N3 smd MARKING CODE M5C smd 5 pin marking PDF

    SOD-323 ZENER

    Abstract: marking h2 SOD-323 ZENER F5 SOD-323 ZD5221B ZD5223B K4 SOD ZD5241 ZENER SOD-323 marking code C1 ZD5221BS2
    Text: Spec. No. : C326S2-C Issued Date : 2009.02.16 Revised Date :2009.05.07 Page No. : 1/4 CYStech Electronics Corp. 200mW SOD-323 Zener Voltage Regulators ZD5221BS2 thru ZD5259BS2 Description The ZD5221BS2 series zener diodes are packaged in a SOD-323 surface mount package that has a power dissipation


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    C326S2-C 200mW OD-323 ZD5221BS2 ZD5259BS2 200mW. UL94V-0 SOD-323 ZENER marking h2 SOD-323 ZENER F5 SOD-323 ZD5221B ZD5223B K4 SOD ZD5241 ZENER SOD-323 marking code C1 PDF

    MTDN7002ZHS6R

    Abstract: MTDN7002
    Text: Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 1/ 7 CYStech Electronics Corp. N-CHANNEL MOSFET dual transistors MTDN7002ZHS6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V)


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    C320S6R MTDN7002ZHS6R OT-363R MTDN7002ZHS6R MTDN7002 PDF

    MTNK1N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 1/7 N-CHANNEL MOSFET MTNK1N3 Description The MTNK1N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


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    C320N3 OT-23 UL94V-0 MTNK1N3 PDF

    MTP2301N3

    Abstract: sot-23 MARKING CODE 54
    Text: Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 1/6 CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET MTP2301N3 Features • VDS=-20V RDS ON =130mΩ@VGS=-4.5V, IDS=-2.8A RDS(ON)=190mΩ@VGS=-2.5V, IDS=-2A • Advanced trench process technology


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    C322N3 MTP2301N3 OT-23 OT-23 UL94V-0 MTP2301N3 sot-23 MARKING CODE 54 PDF

    SOT-363 Marking 6C

    Abstract: MTDK1S6R
    Text: Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 CYStech Electronics Corp. N-CHANNEL MOSFET dual transistors MTDK1S6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(2.5V)


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    C320S6R-A OT-363R UL94V-0 SOT-363 Marking 6C MTDK1S6R PDF

    marking 702

    Abstract: MTN7002N3 n-channel mosfet SOT-23
    Text: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2007.12.12 Page No. : 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D G S G:Gate S:Source


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    C325N3 MTN7002N3 MTN7002N3 OT-23 UL94V-0 marking 702 n-channel mosfet SOT-23 PDF

    MTDN3018S6R

    Abstract: No abstract text available
    Text: Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 CYStech Electronics Corp. N-CHANNEL MOSFET dual transistors MTDN3018S6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V)


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    C320S6R MTDN3018S6R OT-363R MTDN3018S6R PDF

    MTN7002ZHN3

    Abstract: marking 702 sot23
    Text: CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.07.24 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHN3 Description The MTN7002ZHN3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


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    C320N3 MTN7002ZHN3 MTN7002ZHN3 OT-23 UL94V-0 marking 702 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


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    C320S3-R MTN3018S3 MTN3018S3 OT-323 PDF

    N7000

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 1/7 N-CHANNEL MOSFET MTN7000ZHA3 Description The MTN7000ZHA3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


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    C320A3 MTN7000ZHA3 MTN7000ZHA3 MTN7002ZHA3 N7000 PDF

    N7000

    Abstract: 1000 volt mosfet to-92 C325A MTN7000A3
    Text: Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date :2007.10.05 Page No. : 1/5 CYStech Electronics Corp. N-CHANNEL MOSFET MTN7000A3 Description The MTN7000A3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7000A3 TO-92 G:Gate S:Source D:Drain


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    C325A3 MTN7000A3 MTN7000A3 UL94V-0 N7000 1000 volt mosfet to-92 C325A PDF

    MTN2302V3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features • VDS=20V RDS ON =85mΩ(max.)@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A • Simple drive requirement


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    C323V3 MTN2302V3 TSOT-23 UL94V-0 MTN2302V3 PDF