VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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quad p-CHANNEL
Abstract: VQ2004J
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
S-04279--Rev.
16-Jul-01
quad p-CHANNEL
VQ2004J
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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Original
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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PDF
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) -60 5 @ VGS = -10 V -2 to -4.5 -0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,
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VQ2004J
37655--Rev.
VQ2004J
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VQ2004J
Abstract: quad p-CHANNEL
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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Original
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VQ2004J
18-Jul-08
VQ2004J
quad p-CHANNEL
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quad p-CHANNEL
Abstract: vq2004j
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
08-Apr-05
quad p-CHANNEL
vq2004j
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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quad p-CHANNEL
Abstract: No abstract text available
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,
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VQ2004J
VQ2004J
S-04279--
16-Jul-01
quad p-CHANNEL
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PDF
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b0725
Abstract: No abstract text available
Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •
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VQ2004J
P-37655--Rev.
b0725
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VP2410
Abstract: No abstract text available
Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L
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VP0808B/L/M
VP1008B/L/M
VQ2004J
\/PDV10
VQ2006J
VPDV10
TP2010L
TP2410L
VP2410L
VPDV10
VP2410
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b0725
Abstract: No abstract text available
Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching
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VQ2004J
2004J
P-37655--Rev.
b0725
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Untitled
Abstract: No abstract text available
Text: Tem ic VQ2004J S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V B R D S S M i n ( V ) rn s iim ) M a x (Q ) V e s ta » (V ) I d (A ) -6 0 5 V GS = - 1 0 V - 2 to - 4 .5 -0 .4 1 Features Benefits • • • •
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VQ2004J
P-37655--Rev.
25-Jul-94
P-37655--
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vp0300m
Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
vp0300m
VP0300B
VP0808L
VQ2001P
VQ2004P
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2sk to-92
Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)
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VNS009A
O-204AA
VNS009D
O-220AB
VNS012A
O-204AE
VQ1006P
VQ2001J
VQ2001P
v02004j
2sk to-92
Siliconix
v020
VNS013A
VNT0080
VNT008A
VNT009A
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VP0808B
Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300B
VP0300M
VP0808L
VQ2001P
VQ2004P
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BSR78
Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
BSR78
VP0300M
VP0808L
041 itt diode
VP0300B
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VPDS06
Abstract: No abstract text available
Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d
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VPDS06
6-204VP1008B)
VPDV10
VPDS06
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VP0808M
Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VQ2006P
VP0300B
VP0300M
VP0808L
VQ2001P
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PDF
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VP0808B
Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300B
VP0300M
VP0808L
VQ2001P
VQ2004P
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PDF
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VP100
Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP100
VP1001P
VP0300B
VP0300M
VP0808L
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PDF
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VP0808M
Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
IN400
VP0300B
VP0300M
VP0808L
VQ2001P
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PDF
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VP0300M
Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300M
k 2541 30v
IN400
VP0300B
VP0808L
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PDF
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