VQA 23
Abstract: No abstract text available
Text: date 09/23/2013 page 1 of 7 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~105°C efficiency up to 80% input
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VQA-S9-D15-SIP
VQA-S12-D15-SIP
VQA-S15-S9-SIP
VQA-S15-D9-SIP
VQA-S15-D15-rranty.
VQA 23
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Untitled
Abstract: No abstract text available
Text: date 07/01/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL
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VQA-S9-D15-SIP
VQA-S12-D15-SIP
VQA-S15-D15-SIP
VQA-S15-D17-SIP
VQA-S24-D15-SIP
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S9S12
Abstract: No abstract text available
Text: date 02/05/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL
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VQA-S9-D15-SIP
VQA-S12-D15-SIP
VQA-S15-D15-SIP
VQA-S15-D17-SIP
VQA-S24-D15-SIP
S9S12
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,
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DD600S17K3
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motherboard diagram
Abstract: 486 MOTHERBOARD MYLEX headland technology 486DX symphony chip set motherboard HT-216 HGC hercules headland 386 486DX symphony chip set cga to vga headland
Text: ML466 Slimline System Board lnstallatlon and Operations Guide Vorolon 001 1mQ2 P/N: r71011-001 MSL486 Sllmline Boari Pmfaco PREFACE Thank you for your choice of a Myiex MSL488 System Board product. With proper installation and care, your Myiex System Board will operate
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ML466
r71011-001
MSL486
MSL488
720x540
800x600
1024x768
640x400
motherboard diagram
486 MOTHERBOARD MYLEX
headland technology
486DX symphony chip set motherboard
HT-216
HGC hercules
headland 386
486DX symphony chip set
cga to vga
headland
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E720BXF
Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range
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Edge720
Edge720
E720BXF
EVM720BXF
E720BXF
E720BXF EDGE
Edge710
EVM720BXF
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Untitled
Abstract: No abstract text available
Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable
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Edge720
com60
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Racal Instruments 6103
Abstract: IT 502 for radio remote control gsm based digital notice board using LCD monitor dell GCF-CC EN61010-1 EN61326-1 IEC60068 PC333 TS51
Text: Conformance Test 6103 AMR AIME - AMR Layer 1 & Protocol Analysis 6103 AIME AMR/CT - AMR Conformance Test Solution • Protocol analyzer, Layer 1 tester and conformance tester for GSM AMR terminals • Modular and expandable from R&D use to full Conformance Test System
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VQA 23
Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Text: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26
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LS5160
CQX51
HLMP-33
TLS1541)
SAR55114)
TLR116A3)
TLUR5400
CQY24
HLMP-3000
TLR114A3)
VQA 23
Funkamateur
VQA 13
ESBR5501
vqa 33
FUNKAMATEUR - Bauelementeinformation
VQA13
esbg5501
TLUY5400
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5252 F 1006
Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Text: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n
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K/10--
K/10-10
5252 F 1006
40r6
NF 846
RFT service-mitteilungen
"service-mitteilungen"
vqe 21
RFT Servicemitteilungen
servicemitteilungen
service-mitteilungen
5252 f 1201
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A277D
Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Text: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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marking BSs sot23
Abstract: BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens
Text: SIEMENS SIPMOS Small-Signal Transistors VDS lD ^ D S o n • • • BSS 139 BSS 229 = 250 V = 0 .0 4 /0 .0 7 A = 100 Q N channel Depletion mode Packages: SOT-23, T O -9 2 1) Type Marking Ordering code fo r version in bulk Ordering code Ordering code
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OT-23,
Q62702-S575
Q62702-S567
Q62702-S567-P1
Q62702-S612
Q62702-S600
Q62702-S600-P1
marking BSs sot23
BSS-229
s 100 139 004
BSS229
marking BSs sot23 siemens
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3D24N2Y
Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät
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Ge1012
3D24N2Y
transistor sc 238
9008 transistor
transistor sc 308
SAL 41
transistor 9013
1008 transistor
X2C70
transistor D 1002
3D24N
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SIEMENS THYRISTOR BRY 20
Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Text: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly
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fl23SbaS
Q0047b3Jj
BRY20
Q60217-Y20
100mA
SIEMENS THYRISTOR BRY 20
7809A
SIEMENS thyristor
BRY 300
BRY20
SIEMENS FAST THYRISTOR
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LF33
Abstract: IRT 1250
Text: IRFR/Ü210A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 n A Max. @ VDS= 200V Low Rdsjon) ■ 1.250 (Typ.)
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IRFR/U21GA
IRFR/U210A
LF33
IRT 1250
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden
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rema andante
Abstract: GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio
Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNOFUNK UND FERNSEH EN r a d io -television CHROMAT 1060 Der VEB Fernsehgerätewerke Staßfurt wird, im Verlauf des 2. Halbjah res 1976 die ersten Farbfernsehgeräte vom neuen Typ "CHROMAT 1060" an den Handel ausliefera. Der "CHROMAT 1060" gilt offiziell als
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III/18/379
rema andante
GER-A
service-mitteilungen
stern R 160
REMA
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Stassfurt
rema adagio 830
adagio
rema adagio
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6358N
Abstract: LA6358N LA6358NS 6358NS 358N NE319
Text: O rdering num ber: EN 3191A Monolithic Linear IC LA6358N.6358N S High-Performance Dual Operational Amplifiers Overview The LA6358N is an IC integrating two high-performance operational amplifiers in a single package. This operational amplifier contains an internal phase compensator and is designed to operate from a
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LA6358N
6358NS
6358N
LA6358NS
6358NS
358N
NE319
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5017B
Abstract: DIODE TH 5 N
Text: A P T 5017B V F R A dvanced PO W ER Te c h n o lo g y 500v POWER MOS V 30a 0.170s 2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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5017B
O-247
APT5017BVFR
APT5017BVFR
O-247AD
DIODE TH 5 N
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STR-F6600
Abstract: Series STR-F6600 HG Genuine STR-F6672 str flyback mosfet STRW5 strf6600 STRF6674
Text: STR-F6600 Series StnnKpn S M P S P R IM A R Y 1C A d v a n ta g e s Q n tf y g i ^ radhniC B — P j t p d A nim ^m METCFET m ia * * * F! twi[ Opm dse w td iQ * l *£eoeel Sc€i S w w ttaf tor U rn DIb^mom ft EMI M O w c M r n i^ iio U iiib ^ D fec«\fatat»lfadb«t
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STR-F6600
0ytack20
300KHz
300kHz
Series STR-F6600
HG Genuine
STR-F6672
str flyback mosfet
STRW5
strf6600
STRF6674
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ycl dc 101
Abstract: 2SC1755 i1811
Text: N0.4Z9D 2 F S A \ Y S C 1 7 5 5 , 1 7 5 6 . 1 7 5 7 I , NPK JrJ Rte! D iffused Planar S i } con. T r a n k s to r j 'F o r Chroma. O utput, 8 AF O utp ut, o f C o lo r Tv F o r V id e o O u tp u t & AF O u tp u t o f B/W TV O i Theae 2SC 1755,1756,1757 a r c d i f f e r e n t o n ly frorc t h t l r p*cfc* 9* * *
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2SC1755
ycl dc 101
i1811
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GA200TD120U
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA200TD120U
GA200TD120U
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