VQE 14
Abstract: igbt module bsm 300
Text: euoec F BSM 300 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 300 GA 120 DL 1200V 550A h Package Ordering Code SINGLE SWITCH 1
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Oct-17-1997
VQE 14
igbt module bsm 300
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Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
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IRG4IBC20KD
25kHz
T0-220
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PDF
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vqe 14 E
Abstract: vqe 13 e vqe 13
Text: euoec F BSM 200 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A h Package Ordering Code HB 200GAL
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BSM300GA120DN2
Nov-24-1997
vqe 14 E
vqe 13 e
vqe 13
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eupec module igbt
Abstract: No abstract text available
Text: euoec F BSM100 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A h Package Ordering Code HALF BRIDGE GAL 2
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BSM100
C67076-A2012-A70
Nov-24-1997
BSM100GAL120DN2
BSM100GAR120DN2
eupec module igbt
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igbt BSM 300 GA 120
Abstract: vqe 14 d VQE 23 E
Text: euoec BSM 300 GA 120 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 300 GA 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S
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C67076-A2007-A70
C67070-A2017-A70
Oct-27-1997
igbt BSM 300 GA 120
vqe 14 d
VQE 23 E
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Untitled
Abstract: No abstract text available
Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module
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300R12tCF2
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DI 944
Abstract: c941 transistor C943 transistor C942 transistor c942 irgpc30kd2 transistor C938 transistor c943 C937 diode C937
Text: P D - 9.1081 kitemational [ÎÔR]Rectifier IRGPC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -10 jjs @125°C, VGE= 15V Switching-loss rating includes all 'tail" losses
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IRGPC30KD2
C-943
O-247AC
C-944
DI 944
c941 transistor
C943 transistor
C942
transistor c942
irgpc30kd2
transistor C938
transistor c943
C937
diode C937
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PDF
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transistor C710
Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716
Text: bitemational ^Rectifier PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c es = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC30UD2
C-715
O-247AC
C-716
transistor C710
C712 transistor
diode C710
transistor C715
c714
C715 diode
diode c716
c714 diode
c710
LE C716
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Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Thermal properties Therm ische Eigenschaften 0,0345°C/W DC, pro Baustein / per module 0,069 °C/W DC, pro Zweig / per Arm 0,02 °C/W pro Baustein / per module 0,04 °C/W pro Zweig / per Arm Transistor Transistor Elektrische Eigenschaften
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3HQ32W
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vqe 14 E
Abstract: BSM75GAL120DN2 BSM75GAR120DN2 vqe 14 D VQE 14 C
Text: euoec F BSM 75 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE BSM 75 GAL 120 DN2 1200V 105A h Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70
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Nov-24-1997
BSM75GAL120DN2
BSM75GAR120DN2
vqe 14 E
BSM75GAR120DN2
vqe 14 D
VQE 14 C
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IRGKI115U06
Abstract: C779 LC115
Text: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI115U06
25KHz
100KHz
C-781
IRGK1115U06
C-782
IRGKI115U06
C779
LC115
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Untitled
Abstract: No abstract text available
Text: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code
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BSM150GB170DN2
E3166
C67070-A2709-A67
E3166
Oct-27-1997
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Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties
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PWWR60CKF6
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vqe 24 e
Abstract: vqe 24 d
Text: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL
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Oct-23-1997
vqe 24 e
vqe 24 d
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switching TRANSISTOR mosfet 30V 40A
Abstract: IRGB440U
Text: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e
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IRGB440U
O-220AB
O-220
switching TRANSISTOR mosfet 30V 40A
IRGB440U
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VQE 23 E
Abstract: VQE 23 F
Text: euoec BSM 200 GA 170 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = 6-8 Ohm Type VbE Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67
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C67070-A2705-A67
C67070-A2707-A67
Oct-27-1997
VQE 23 E
VQE 23 F
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transistor c900
Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Text: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses
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-10ps
IRGBC20KD2
C-903
TQ-220AB
C-904
transistor c900
transistor c904
transistor c903
c901 transistor
transistor c902
C897
c898 TRANSISTOR
C898
c902
C901
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PDF
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transistor c905
Abstract: LE C906 c912 c906 transistor
Text: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses
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-10ps
IRGBC30KD2
O-22QAB
C-912
transistor c905
LE C906
c912
c906 transistor
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transistor KF
Abstract: diode 182
Text: FF 100 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein / per module 0,075 DC, pro Z w e ig / per arm 0,15 RthCK pro Baustein / per module 0,04 pro Zweig / per arm 0,08 Transistor Transistor Elektrische Eigenschaften Electrical properties
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R1200KF
transistor KF
diode 182
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120DN2K
Abstract: No abstract text available
Text: euoec BSM 100 GB 120 DN2K F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter
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C67070-A2107-A70
Oct-21-1997
120DN2K
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PDF
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transistor C930
Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Text: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses
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-10ps
IRGPC20KD2
C-935
O-247AC
C-936
transistor C930
transistor c929
transistor C935
C936
C933
transistor C930 e
C930 transistor
transistor c936
transistor C933
c929
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transistor C717
Abstract: diode C722 transistor C723 diode c723 transistor C718 diode C720 diode c724 transistor C722 C723 DIODE C80 diode
Text: htam aHnnal PD - 9.808A SogRectifier IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-los8 rating includes all "tail" losses • HEXFRED soft ultratest diodes • Optimized for high operating frequency over 5kHz
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IRGPC40UD2
C-723
O-247AC
C-724
transistor C717
diode C722
transistor C723
diode c723
transistor C718
diode C720
diode c724
transistor C722
C723 DIODE
C80 diode
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PDF
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bsm15gd120dn2e3224
Abstract: No abstract text available
Text: B S M 1 5 G D 1 2 0 DN2 e u o e c F IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Package Ordering Code BSM 15 GD 120 DN2 VbE 1200V 25A ECONOPACK 2 C67076-A2504-A67
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GD120DN2E3224
C67076-A2504-A67
C67070-A2504-A67
0ct-20-1997
bsm15gd120dn2e3224
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tr c828
Abstract: tr c828 c829 C828 transistors tr c829 c829 c828 C-828 IRGTI115U06 c826
Text: kïtemational goi Rectifier PD'99558 IRGTI115U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI115U06
C-829
C-830
tr c828
tr c828 c829
C828 transistors
tr c829
c829
c828
C-828
IRGTI115U06
c826
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