kf 202 transistor
Abstract: transistor KF
Text: FF 50 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 50 A V ces ¡c Therm ische Eigenschaften Thermal properties 0,225 DC, pro Baustein /p e r module DC, pro Zweig / per arm
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1BW TRANSISTOR
Abstract: No abstract text available
Text: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften
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3MD32CÃ
34D32CI7
1BW TRANSISTOR
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FF50R12KF2
Abstract: No abstract text available
Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module
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FFSOR12COKF3
FF50R12
50R10KF2/B
34032T7
FF50R12KF2
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Untitled
Abstract: No abstract text available
Text: FS 20 R 06 KFS Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 20 A VcES lc Thermal properties DC, pro B a u ste in /p e r module t'vj max tvj op 2,08
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FF50R12KF2
Abstract: FF50R12
Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module
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FFSOR12COKF3
FF50R12
50R10KF2/B
34032T7
FF50R12KF2
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Untitled
Abstract: No abstract text available
Text: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe W erte V ces Maximum rated values 600 V 300 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,045 3C/W RthJC DC, pro Zweig / per arm
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3403EcI7
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R1200
Abstract: diode v3e
Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm
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3403ES7
R1200
diode v3e
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8Q transistor
Abstract: No abstract text available
Text: Technische Information/Technical Information IGBT-Module IGBT-Modules FZ 800 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung 800
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FZ800Ft12
FZ800R
8Q transistor
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Untitled
Abstract: No abstract text available
Text: Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzu lässige W erte Maximum rated values 1200 V 50 A V CES lc Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,083 ‘’C/W DC, pro Zweig / per arm
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Untitled
Abstract: No abstract text available
Text: FF 100 R 06 KF 2 Electrical properties VcES Maximum rated values 600 V lc 100 A IC R M 200 A O 400 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte lF max ¡F R M t p =1 ms Maximum rated values
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10CJ5
600KF3
-FF130F
123-C,
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Untitled
Abstract: No abstract text available
Text: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve
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PC50W
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Untitled
Abstract: No abstract text available
Text: mH/ERBC CM150DU-24H Powerex, Inc., 200 HIIHs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DlJ3Í IGBTMOD U-Series Module 150 Amperes/1200 Volts Tc Measured Description: r Ki r Ki r Ki Ís t L í — i t IT Powerex IGBTMOD™ Modules are designed for use in switching
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CM150DU-24H
Amperes/1200
-300A/
i4b21
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183
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vqe 24 d
Abstract: No abstract text available
Text: FS 50 R 06 KF 3 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,075 °C/W RthJC DC, pro Zweig / per arm 0,450 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values
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Untitled
Abstract: No abstract text available
Text: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK VcES lc 1200 V 200
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FF20QR12KF2
F300R1300
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CW1200
Abstract: No abstract text available
Text: FS 50 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 1200 V 50 A V CES Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,083 ‘’C/W DC, pro Zweig / per arm
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34D32C37
CW1200
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transistor KF
Abstract: No abstract text available
Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,175 C/W Rthjc DC, pro Zweig / per arm
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125-C,
transistor KF
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Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
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IRG4IBC20KD
25kHz
T0-220
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kl2 t1 transistor
Abstract: No abstract text available
Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module
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10-2I--
kl2 t1 transistor
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Eupec BSM
Abstract: BSM50GP60 eupec
Text: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM50GP60
50GP60
Eupec BSM
BSM50GP60
eupec
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5N602
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-400IZ
T0220AB
BUK856-400IZ
5N602
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Untitled
Abstract: No abstract text available
Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module
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10-2I--
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transistor 10 sS 125
Abstract: No abstract text available
Text: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,045 Rtruc DC, pro Baustein / per module 0,090 DC, pro Zweig / per arm 0,030 RthCK pro Baustein / per module pro Z w e ig / per arm
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vqe 24 d
Abstract: VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d
Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm al properties Therm ische Eigenschaften 0,175 C/W Rthjc DC, pro Baustein / per module 0,35 °C/W DC, pro Zweig / per arm 0,06 “C/W RthCK pro B a u ste in /p e r module
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FF7SR06KF2IÃ
125-C,
vqe 24 d
VQE 24
vqe 14
vqe 24 e
VQE 13
we vqe 24 d
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