BS20-NT
Abstract: mobile switching center (msc) msc in gsm msc mobile switching center AMR base station wcdma soc GSM circuit diagram gsm interception mindspeed comcerto
Text: ComcertoTM GSM/W-CDMA Software Package Release 1.0 Mindspeed’s highly integrated and comprehensive Comcerto system-on-chip SoC hardware and software solution offers telecommunications equipment manufacturers the convenience and performance of a single device that transmits
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82xxx-BRF-004-A
SWO-003-WCDMA
BS20-NT
mobile switching center (msc)
msc in gsm
msc mobile switching center
AMR base station
wcdma soc
GSM circuit diagram
gsm interception
mindspeed comcerto
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mindspeed comcerto
Abstract: evrc msc mobile switching center gps clock CDMA2000 codec 82XXX
Text: ComcertoTM CDMA2000 Software Package Release 1.0 Mindspeed’s highly integrated and comprehensive Comcerto system-on-chip SoC hardware and software solution offers telecommunications equipment manufacturers the convenience and performance of a single device that transmits
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CDMA2000
QCELP8/13k
82xxx-BRF-003-B
mindspeed comcerto
evrc
msc mobile switching center
gps clock
CDMA2000 codec
82XXX
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Untitled
Abstract: No abstract text available
Text: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M
10kHz)
TQ-220AB
5545E
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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transistor TO-3P Outline Dimensions
Abstract: IRGPC60K
Text: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC60K
Liguria49
transistor TO-3P Outline Dimensions
IRGPC60K
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c 2432
Abstract: D72F5T2 NPN
Text: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They
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D72F5T1,
D72F5T2
D73F5T1
D72F5T1
D72F5T2
O-251
O-252
-252AA
c 2432
D72F5T2 NPN
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DIODE c802
Abstract: IRGNI115U06
Text: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGNI115U06
C-806
DIODE c802
IRGNI115U06
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Untitled
Abstract: No abstract text available
Text: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance
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HGTG34N100E2
O-247
e-710ns
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Q62702-C2597
Abstract: SCT-595
Text: SIEMENS BCP 71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage o II LD Q62702-C2597 II PCs Package
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Q62702-C2597
SCT-595
SCT-595
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B-6114
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Symbol Conditions VCES VcGR lc Rge ~ 20 kn ICM V g es Ptot Tj, Tstgl V alu es Units ' 1200 Tease = 25/80 °C Tease = 25/80 ' C tp = 1 ms per IG B T, T caSe = 25 °C V 2700 - 4 0 . . .+ 1 5 0 (1 2 5 W °C 2 5 0 0 71
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vqe 71
Abstract: VQE 14 C VQE 23
Text: P D -9.1031 bitemational IÏÔ R ]Rectifier IRGPC20U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC20U
O-247AC
O-247AC
vqe 71
VQE 14 C
VQE 23
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR U bflE » ^1302271 OGSOSMl 233 « H A S HGTG34N100E2 34A, 1000V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP V IB V • 34 Am p 1000 Volt • Latch Free Operation I • Typical Fall T im e - 710ns COLLECTOR
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HGTG34N100E2
O-247
710ns
HGTG34N100E2*
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transistor c655
Abstract: No abstract text available
Text: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20U
O-220AB
O-22QAB
transistor c655
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Untitled
Abstract: No abstract text available
Text: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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PC30W
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Untitled
Abstract: No abstract text available
Text: 4WEREX CM400HU-24H Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD U-Series Module 400 Amperes/1200 Volts | A Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM400HU-24H
Amperes/1200
135ns)
72T4b21
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Untitled
Abstract: No abstract text available
Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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360Vdc,
S5452
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Untitled
Abstract: No abstract text available
Text: FF 400 R 16 KF 1 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties Rthjc DC, pro B au stein/p e r module 0,02 DC, pro Z w e ig /p e r arm 0,04 RthCK pro B austein/p e r module 0,01 pro Zweiq / per arm
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3403B17
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz
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Q62702-F1794
OT-343
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG50H1BS1
50HIBS1-A
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Untitled
Abstract: No abstract text available
Text: CM75DY-28H Powerex, Inc., 200Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 D U S l IGBTMOD H-Series Module 75 Amperes/1400 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM75DY-28H
200Hillls
Amperes/1400
135ns)
20-25kHz)
0DCH224
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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transistor bh ra
Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
Text: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a
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BUK856-800A
T0220AB
transistor bh ra
WE VQE 24 E
D 400 F 6 F BIPOLAR TRANSISTOR
WE VQE 11 E
BUK856-800A
M 615 transistor
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic
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Untitled
Abstract: No abstract text available
Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4BC30W
0D2flb53
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