Contextual Info: TM Micro Commercial Components PIN DIODES MCC Part Number Continuous Reverse Voltage VR V Maximum Reverse Current @ 25°C IR @ VR A Maximum Forward Voltage Drop Current VF @ IF V Junction Capacitance VR =1.0V f=1MHz Diode Forward Resistance IF =10mA f=100MHz

Contextual Info: BA479G.BA479S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S VR = 30 V

BA479

Abstract: BA479G BA479S
Contextual Info: BA479G.BA479S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S VR = 30 V

Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA979

Abstract: BA979S
Contextual Info: BA979.BA979S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications 96 12009 Current controlled HF resistance in adjustable attenuators Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA979

Abstract: BA979S
Contextual Info: BA979.BA979S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications 96 12009 Current controlled HF resistance in adjustable attenuators Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

Contextual Info: BA679.BA679S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ

BA679

Abstract: BA679S
Contextual Info: BA679.BA679S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ

BA679

Abstract: BA679S
Contextual Info: BA679.BA679S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ

Contextual Info: BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 200mWatts POWER 100 Volts FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz

BAS116WS

Contextual Info: DATA SHEET BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 100 Volts POWER 200mWatts SOD-323 Unit: inch mm FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz

Contextual Info: ^ ^ discrete devices jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 ELECTRICAL CHARACTERISTICS a 25 C REVERSE BREAKDOW N V O LT A G E STANDOFF VOLTAGE PART NUMBER (N0TE1 VR M AXIM U M R EVE R SE LE AK AG E (a VR M AXIM U M C LA M P IN G V O LT A G E

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: 134B v08g c 113C SRK-12ZB U17C U17D U17E V07E s 134b
Contextual Info: - 94- f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

BA479G

Abstract: ba479 BA479S
Contextual Info: BA479G.BA479S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S

SRT-2W6H

Abstract: SRK-12ZB A114C SRT 2w6H V08G 113C 134B U17C U17D U17E
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

BA779

Contextual Info: BA779–2 Vishay Semiconductors Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code

BA779

Contextual Info: BA779–2 Vishay Telefunken Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code

Contextual Info: RECTIFIER, January 7, 1998 up to 6kV, 260mA, 5|JS TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • M50A M60A QUICK REFERENCE DATA Vr = 5kV - 6kV

TA7063P

Abstract: AN7320 BA3302 ta7227p an7112 TA7227 GW 5820 14.4v AN6210 mb3105
Contextual Info: o » f l î * j * * Œ M H . 6 .2 - 1 7 V o m f f i e i t 'f b K Ä r t Ä AN6210 • fa V «nia»« ■ * * * » r«= 25t Vcc 17V Vra^s 0 -4 .5 V Vr«-s 0 -4 .5 V Vr«_a 0 -4 .6 V VrT-5 V ra-5 0 -4 .5 V V r ,- 5 0 -4 .5 V Jcc 3<hnA Pr

US1B

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1M product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 1000V Ifsm 30A IF(AV) 1.0A @Vf 1.7V @If 1.0A Trr 100nS IR 10µA @VR 1000V Package Qty Tape : 5K/Reel, 80K/Ctn;