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    VS U 208 B Search Results

    VS U 208 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0208BSA-5SI#S0 Renesas Electronics Corporation 2Mb Advanced LPSRAM (256k word x 8bit), sTSOP(32), /Embossed Tape Visit Renesas Electronics Corporation
    R1LV0208BSA-5SI#B0 Renesas Electronics Corporation 2Mb Advanced LPSRAM (256k word x 8bit), sTSOP(32), /Tray Visit Renesas Electronics Corporation
    R1LV0208BSA-7SI#B0 Renesas Electronics Corporation Low Power SRAM, TSOP(1), /Tray Visit Renesas Electronics Corporation
    ISL6208BCRZ-T Renesas Electronics Corporation High Voltage Synchronous Rectified Buck MOSFET Drivers Visit Renesas Electronics Corporation
    874208BKILFT Renesas Electronics Corporation 2.5V Differential LVDS Clock Divider And Fanout Buffer Visit Renesas Electronics Corporation

    VS U 208 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Telefunken u 208 b

    Abstract: U208B TELEFUNKEN* U 111 B u111b 146 telefunken telefunken 1007 VS U 208 B u208 triac control 8-pin tea1007
    Text: TELEFUNKEN Semiconductors U 208 B / U 208 B–FP Phase Control Circuit – General Triac Control with Retrigger Technology: Bipolar Features D Automatic retriggering D Triggering pulse typ. 125 mA D Voltage and current synchronisation D Internal supply voltage monitoring


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    D-74025 Telefunken u 208 b U208B TELEFUNKEN* U 111 B u111b 146 telefunken telefunken 1007 VS U 208 B u208 triac control 8-pin tea1007 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 17 x 23mm


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    W3H64M72E-XSBX W3H64M72E-XSBX 3H64M72E-ESSB PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M64E-XSBX W3H32M64E-XSBX PDF

    designs

    Abstract: 90-FBGA W3H32M64E-XSBX White Electronic Designs
    Text: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M64E-XSBX W3H32M64E-XSBX designs 90-FBGA White Electronic Designs PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M64E-XSBX W3H32M64E-XSBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX ADVANCED* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


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    W3H32M72E-XSBX W3H32M72E-XSBX 2M72E-ESSB PDF

    APTM20HM08F

    Abstract: No abstract text available
    Text: APTM20HM08F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · OUT1 G1 VBUS


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    APTM20HM08F APTM20HM08F­ APTM20HM08F PDF

    LTV-206

    Abstract: optocoupler 207 LTV-208 LTV-207 ati reflow profile 207 optocoupler 75KV VDE0884 optocoupler 206
    Text: LI TE-O N TEC H N O LO G Y C O RP O R ATI O N Property of Lite-on Only LTV-200/205/206/207/208 Optocouplers, Phototransistor Output, Dual Channel, SOP8 Package Description The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared


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    LTV-200/205/206/207/208 LTV-200/205/206/207/208 BNS-OD-C131/A4 LTV-200 LTV-206 optocoupler 207 LTV-208 LTV-207 ati reflow profile 207 optocoupler 75KV VDE0884 optocoupler 206 PDF

    LM308 equivalent

    Abstract: LM208T LH2208 LM108A
    Text: LM108/A/208/A/308/A-F, N,N -14,T LH2108/A/2208/A/2308/A-F, N ,N -14,T DESCRIPTION The LM108/108A series are precision oper­ ational amplifiers having specifications a factor of ten better than FET amplifiers over their operating temperature range. In addi­


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    LM108/A/208/A/308/A-F, LH2108/A/2208/A/2308/A-F, LM108/108A LH2108 LM108A LM108/A/208/A/308/ LH2108/A/2208/A/2308/A-F LM308 LM308 equivalent LM208T LH2208 PDF

    LM308 pin configuration

    Abstract: LM308L LM108 LM308D LM308 LM308H lm308h application LD108A LM308AN ld308
    Text: LM108/208/308 LM108A/208A/308A O p e ra tio n a l A m p lifiers Distinctive C haracteristics: 1 0 0 % re lia b ility a s s u ra n c e te s tin g in clu d in g h ig h -te m p e ra tu re b a k e , te m p e ra tu re c y c lin g , c e n trifu g e a n d fin e le a k h e rm e tic ity te stin g in


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    LM108/208/308 LM108A/208A/308A LM108, LM208, LM308, LM108A, LM208A LM308A. LIC-672 LM308 pin configuration LM308L LM108 LM308D LM308 LM308H lm308h application LD108A LM308AN ld308 PDF

    lt 8202

    Abstract: zytel 1877A asbestos FCI Electronics ob 2269 TA 8202 K JISC7021 LVG2641-1 LVY2641-1
    Text: LIGITEK ELECTRONICS CO.,LTD. PropertyofLigitekOnly LIG ITE K O FFICE:7F.,NO .208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 LED ARRAY L A 7 3 B -1 /V G -X -V Y -3 DATA SHEET DOC. NO : QW0905-LA73B-1 A/G.X.VY-3


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    LA73B-1/VG QW0905-LA73B-1/VG 13-Jul 54TYF LVG2641-1 LVY2641-1 54TYP 25mml 13BF-f- lt 8202 zytel 1877A asbestos FCI Electronics ob 2269 TA 8202 K JISC7021 LVY2641-1 PDF

    08006RH4

    Abstract: 08008RH4 Q6040 02010LH5 06008LH4 O8012RH5 Q6025 MT2 Q4025P q4010l 04008LH4
    Text: Alternistor Triacs 6 - 40 Amps Genera! Description T e c c o r o ffe rs b id ire c tio n a l a lte rn is to rs w ith c u rre n t ra tin g s from 6 to 4 0 a m p e re s w ith v o lta g e s fro m 2 0 0 to 8 0 0 v o lts as p a rt of T e c c o r's b ro a d line o f th y ris to rs . T e cco r's a lte rn is to r has b e e n


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    PDF

    DDC0505S

    Abstract: DDC2815D DDC2812D DC0515D DDC2805S DDC0515D DDC1205S DDC1215D DDC05 DDC4815D
    Text: interpoint 10301 Willows Road P.O. Box 97005 DDC SERIES DC-DC CONVERTERS Redmond, WA 98073-9705 m m. TEL: 206 882-3100 TEL: (800) 822-8782 FAX: (206) 882-1990 • Up to 5.0 watts output power @ 70°C • 100 Megohm @ 500 Vdc isolation • Standard 24 pin DIP package


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    DDC0505S 0512D DC0515D DDC1205S DC1212D DDC1215D DDC2805S DDC2812D DDC2815D DDC4805S DDC0515D DDC05 DDC4815D PDF

    Untitled

    Abstract: No abstract text available
    Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic


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    Afl72fln PDF

    SD5443-003

    Abstract: SD3443 SD-3443-1
    Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C 1o+125°C) • External base connection for added control


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    SD3443/5443 SE3450/5450, SE3455/5455 SE3470/5470 SD3443/5443 SD3443 SD5443 SE3450 SD3443 SD5443-003 SD-3443-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/92 C~ l/^oauEññ 2225-K Martin Avenue, Santa Clara, CA 95050 FAX O nM RO NENTS 408 492-1400 (408) 492-1500 // D ~ / rA 1 0 0 fo 4000 MHz TO-8 Cascadable Amplifier Outline Drawings ) AC4079 (Typical Values) Ultra Broad Bandwidth . 100 4000 MHz


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    2225-K AC4079 000017b PDF

    ic 7493 truth table

    Abstract: No abstract text available
    Text: ANALOG DEVICES 0.1 |ülF, +5 V Powered CMOS RS-232 Drivers/Receivers ADM205—ADM 211/ADM 213 TYPICAL OPERATING CIRCUIT FEATURES 0.1 |tF to 10 p.F Capacitors 120 kB/s Data Rate 2 Receivers Active in Shutdown ADM213 On-Board DC-DC Converters ± 9 V Output Swing with +5 V Supply


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    ADM213) MAX205-211/213 RS-232 ADM205-- 211/ADM EIA-232-E MIL-M-36510 28-Lead RS-28) ic 7493 truth table PDF

    24B15D

    Abstract: 12B24S 24B15S 24b5s 5828s 12B5S 12B9S 5B12S 5B15S 5B24S
    Text: PICO ELECTRONICS INC S3E D 714n3D OIDOOÔ71 320 « P E I -5 1 -II FEATURES S ER IES B Hi R eliability Ultra-M iniature Isolated DC-DC Converters Up to 2.5 Watts • Up to 2.5 watt output at 70°C ambient • Encapsulated semiconductors, conservatively rated for maximum reliability


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    711113D -51-II rang20 43B9D 48B120 48B15D 48S24D 48B28D 24B15D 12B24S 24B15S 24b5s 5828s 12B5S 12B9S 5B12S 5B15S 5B24S PDF

    DIODE ZENER bz 148

    Abstract: bz 148 Zener diode 27C18 bz 148 diode 27C10P
    Text: s BZD27C S E R IE S TAIWAN SEMICONDUCTOR RoHS 0.8 Watts Voltage Regulator Diodes COM PLIANCE Sub SM A Hu: Fe a tu re s •fr ❖ ❖ ❖ ❖ ❖ <=• S ilic o n z e n e r di odes Lo w profile su rface -m o u n t p a c k a g e Z e n e r an d su rg e c u rren t sp ecificati o n


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    BZD27C DIODE ZENER bz 148 bz 148 Zener diode 27C18 bz 148 diode 27C10P PDF

    Untitled

    Abstract: No abstract text available
    Text: C BYV12.BYV16 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Soft recovery characteristic • L ow reverse current Applications Fast rectifier and sw itch for exam ple for T V -lin e


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    BYV12. BYV16 BYV13 BYV15 BYV16 PDF

    diode SS 2a

    Abstract: 2Sk51
    Text: 4 4 9 6 2 'Ü V ‘H I'TACT 17'COP I U t L E O ' l RUN I C S > 2SK513— ?3 73C 10089 DElj| 4 4 T tiE D S D T - 3 f- / / O O lD G ß i S |~ S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • High Breakdown Voltage. • High Speed Switching.


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    2SK513-- -2SK513 diode SS 2a 2Sk51 PDF

    Untitled

    Abstract: No abstract text available
    Text: DC/DC Converters 5 Watt Converters for 3.3V Microprocessors S c h e m a t i c D r a w in g The PM6137, PM6138 and PM6551L are a group of small, high-density, high efficiency converters specifically designed for use in powering 3.3V microprocessors from a 5V bus. The


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    PM6137, PM6138 PM6551L PM6137 PM6138 PDF

    skt16

    Abstract: SKT16/12C
    Text: SENIKRON INC 3bE D • f il 3 b b 7 1 GQG23b3 3 m S Z K G 5EM 1KRDN 'T - z s - i'f V rsm V rrm V drm It r m s V dt / cr maximum values for continuous operation 30 A | 40 A | 50 A ITAV (Sin. 180; Tease — • •.°C) 900 800 1100 1300 1500 1700 1000 1200


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    GQG23b3 SKT16/12 SKT10/10D 013bb71 B3-11 G0023bà SKT16 SKT24 skt16 SKT16/12C PDF

    diode t25 4 L5

    Abstract: 2SK513 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26
    Text: 44962TJ5"'H TT'A C TH I7"C U P I O E L E C I RON IC S V 2SK513— P 7 -—3f-// 73C 10089 73 SILICON N -C H A N N E L M O S FET HIGH S P EE D POW ER SWITCHING • FEATURES • H igh B reak d o w n V oltage. • H igh S p e e d S w itch in g . • H igh C utoff fr e q u e n c y .


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    449620b 1Q089-q 2SK513 T0-220AB) -2SK513 diode t25 4 L5 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26 PDF