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    VT20C19 Search Results

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    VT20C19 Price and Stock

    VLSI Technology Inc VT20C19-35PC

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    Bristol Electronics VT20C19-35PC 90
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    VLSI Technology Inc VT20C19-20PC

    IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
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    Quest Components VT20C19-20PC 60
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    VLSI Technology Inc VT20C19-25PC

    IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
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    Quest Components VT20C19-25PC 13
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    NXP Semiconductors VT20C19-20PC

    IN STOCK SHIP TODAY
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    Component Electronics, Inc VT20C19-20PC 2
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    VT20C19 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VT20C19-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    VT20C19-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    VT20C19-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    VT20C19 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original
    2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128 PDF

    vt20c18

    Abstract: VT20C19
    Text: VLSI Technology inc. VT20C18 VT20C19 2,048 x 8 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 20, 25, and 35 ns The VT20C18 and VT20C19 are high-speed static RAMs SRAMs that are organized as 2,048 words by 8 bits. They were developed in con­


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    VT20C18 VT20C19 VT20C18 VT20C19 VT20C19) VT20C18) PDF

    VT20C18-35

    Abstract: VT20C18 VT20C18-20 vt20c19
    Text: V L S I Tech n o lo g y in c . VT20C18 VT20C19 2,048 x 8 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 20, 25, and 3 5 ns Th e V T 2 0 C 1 8 and V T 2 0 C 1 9 are high-speed static RA M s SR A M s that are organized as 2 ,0 4 8 words by


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    VT20C18 VT20C19 24-lead, VT20C18-35 VT20C18 VT20C18-20 vt20c19 PDF

    VT20C18-35

    Abstract: VT20C18-25 nec cmos V62C16-15 VT20C18 VT20C18-20 VT20C19-20 VT20C19-25 VT20C19-35 Z5517AP
    Text: - 54 1 6 K CMOS X A m % it £ °C TAAC max (ns) TCAC max (ns) TOE max (ns) TOH rain (ns) TOD max (ns) RAM S t a t i c > 7' 1# ( 2 0 4 8 x 8 ) m tt TWP nin TDS TDH min (ns) (ns) (ns) TWD min (ns) T»R max (ns) V D D or V CC (V) 2 4 P I N 6 1 1 6 m I DD max


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    2048x8) 24PIN6116 V62C16-15 VT20C18-20 VT20C18 VT20C18-35 UPD446G-15L UPD446G-20 uPD446G-20L UPD446G-25 VT20C18-25 nec cmos VT20C19-20 VT20C19-25 VT20C19-35 Z5517AP PDF