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Abstract: No abstract text available
Text: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,
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VTD205KH
SFH205K
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VTD205K
Abstract: to-92 type MO-63132 pt 100 to92 SFH205K
Text: VTD205K Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,
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VTD205K
SFH205K
VTD205K
to-92 type
MO-63132
pt 100 to92
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Untitled
Abstract: No abstract text available
Text: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,
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VTD205KH
SFH205K
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Untitled
Abstract: No abstract text available
Text: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,
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VTD205KH
SFH205K
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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S1723-04
Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
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VTD31AA
CLD31AA
S1723-04
BPW34 application
VTD34
BPW34
BPW34 application note
SFH206K
BPW34F
SFH205
VTD205
VTD205K
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VTD205K
Abstract: No abstract text available
Text: VTD205K Alternate Source/ Second Source Photodiodes S F H 2 0 5 K I N D U S T R Y E Q U IV A L E N T P A C K A G E D IM E N SIO N S inch (mm) CASE 60 P R O D U C T D ESC R IP T IO N T O -9 2 TYPE [ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planar silicon photodiode in
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VTD205K
SFH205K
3030bm
VTD205K
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Untitled
Abstract: No abstract text available
Text: VTD205K Alternate Source/ Second Source Photodiodes S F H 2 0 5 K IN D U S T R Y E Q U IV A L E N T P A C K A G E DIMENSIONS inch (mm) CASE GD PRO DUCT DESCRIPTION TO -9 2 TYPE IROUND LENS) CHIP ACTIVE AREA: .011 in2 17.41 mm2) Large area planarsilicon photodiode in
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VTD205K
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