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Excelitas Technologies Corporation VTE1063H Ir Emitter, 880Nm, 4.78Mm, To-46, Though Hole; Viewing Angle:35°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:2.8V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes \|Excelitas Tech VTE1063H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VTE1063H	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	VTE1063H	Bulk	2,358	15 Weeks	1	1 $22.33 10 $18.98 100 $15.85 1000 $15.85 10000 $15.85	Buy Now

VTE1063 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTE1063		PerkinElmer Optoelectronics	GaAlAs Infrared Emitting Diode		Original	PDF
VTE1063		EG&G	HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm		Scan	PDF
VTE1063		EG&G Vactec	GaAlAs Infrared Emitting Diodes		Scan	PDF

VTE1063 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE1063H TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063H	PDF
VTe1063H Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE1063H TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063H VTe1063H	PDF
VTE1291-2 Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2	PDF
VTE1063 Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063 VTE1063	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTE1063 Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters	Original	VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF
Untitled Abstract: No abstract text available Text: SbE D 3030^ 0 0 0 1 2 1 b BT1 « V C T GaAIAs Infrared Emitting Diodes VTE1063, 66, 68 TO-46 Flat Window Package — 880 nm E 6 & G VACTEC PACKAGE DIMENSIONS inch mm .1 5 4 ( 3 .9 1 ) CASE 24A DESCRIPTION TO-46 HERMETIC (FLAT WINDOW) CHIP SIZE: .018-X.018'	OCR Scan	VTE1063, 018-X 11econds VTE1063 VTE1068 VTE1066	PDF
VTE1063 Abstract: VTE1066 VTE1068 Text: SbE D 3D 3 0 b C n 0 0 0 1 2 1 b ET1 B I V C T GaAIAs Infrared Emitting Diodes VTE1063, TO-46 Flat Window Package — 880 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 2 « DESCRIPTION TO-46 HERMETIC (FLAT WINDOW) CHIP SIZE:.018-x .018' This wide beam angle TO-46 hermetic emitter	OCR Scan	000121b VTE1063, CASE24A VTE1063 VTE1066 VTE1068	PDF
KT853 Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B	PDF