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    VTH MOS Search Results

    VTH MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    VTH MOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V


    Original     		HN1L02FU PDF

    HN1L03FU

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package


    Original     		HN1L03FU HN1L03FU PDF

    Pch MOS FET

    Abstract: HN1L03FU
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package


    Original     		HN1L03FU Pch MOS FET HN1L03FU PDF

    Pch MOS FET

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V


    Original     		HN1L02FU Pch MOS FET PDF

    HN1L03FU

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package


    Original     		HN1L03FU HN1L03FU PDF

    HN1L03FU

    Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package


    Original     		HN1L03FU HN1L03FU FET MARKING Silicon NP Channel MOS FET High Speed Power Switching PDF

    Pch MOS FET

    Abstract: HN1L03FU
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package


    Original     		HN1L03FU Pch MOS FET HN1L03FU PDF

    HN1L02FU

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z 2.5V gate drive z Low threshold voltage Q1: Vth = 0.5~1.5V z High speed Q2: Vth =−0.5~−1.5V


    Original     		HN1L02FU HN1L02FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z 2.5V gate drive z Low threshold voltage Q1: Vth = 0.5~1.5V z High speed Q2: Vth =−0.5~−1.5V


    Original     		HN1L02FU PDF

    Pch MOS FET

    Abstract: HN1L02FU
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l 2.5V gate drive l Low threshold voltage Q1: Vth = 0.5~1.5V l High speed Q2: Vth =−0.5~−1.5V


    Original     		HN1L02FU Pch MOS FET HN1L02FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5132V TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5132V PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5131E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5131E PDF

    KTK5132E

    Abstract: No abstract text available
    Text: KTK5132E SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5132E KTK5132E PDF

    KTK5164U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5164U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5164U KTK5164U PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5132E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK7132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK7132E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5164U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5164U PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK7132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK7132E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK5131S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.


    Original     		KTK5131S PDF

    STJ828SF

    Abstract: No abstract text available
    Text: STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.


    Original     		STJ828SF OT-23F KST-2125-000 -10mA STJ828SF PDF

    STJ828UF

    Abstract: kst30
    Text: STJ828UF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.


    Original     		STJ828UF OT-323F KST-3059-000 STJ828UF kst30 PDF

    STJ828M

    Abstract: No abstract text available
    Text: STJ828M Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.


    Original     		STJ828M O-92M KST-I016-001 STJ828M PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V


    OCR Scan     		HN1L03FU PDF

    2SJ342

    Abstract: 2SK1825
    Text: TOSHIBA 2SJ342 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ342 ANAROG SWITCH APPLICATIONS Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1825


    OCR Scan     		2SJ342 2SK1825 2SJ342 2SK1825 PDF